| Native defects in gallium arsenide JC Bourgoin, HJ Von Bardeleben, D Stievenard Journal of applied physics 64 (9), R65-R92, 1988 | 465 | 1988 |
| Identification of a defect in a semiconductor: EL2 in GaAs HJ Von Bardeleben, D Stievenard, D Deresmes, A Huber, JC Bourgoin Physical Review B 34 (10), 7192, 1986 | 297 | 1986 |
| Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires VG Dubrovskii, NV Sibirev, GE Cirlin, IP Soshnikov, WH Chen, R Larde, ... Physical Review B 79 (20), 205316, 2009 | 245 | 2009 |
| Nanooxidation using a scanning probe microscope: An analytical model based on field induced oxidation D Stievenard, PA Fontaine, E Dubois Applied Physics Letters 70 (24), 3272-3274, 1997 | 240 | 1997 |
| Synthesis and characterization of the electronic and electrochemical properties of thienylenevinylene oligomers with multinanometer dimensions I Jestin, P Frère, N Mercier, E Levillain, D Stievenard, J Roncali Journal of the American Chemical Society 120 (32), 8150-8158, 1998 | 163 | 1998 |
| Characterization of scanning tunneling microscopy and atomic force microscopy-based techniques for nanolithography on hydrogen-passivated silicon PA Fontaine, E Dubois, D Stievenard Journal of applied physics 84 (4), 1776-1781, 1998 | 156 | 1998 |
| Are electrical properties of an aluminum–porous silicon junction governed by dangling bonds? D Stievenard, D Deresmes Applied physics letters 67 (11), 1570-1572, 1995 | 156 | 1995 |
| Behavior of electron-irradiation-induced defects in GaAs D Stievenard, X Boddaert, JC Bourgoin, HJ Von Bardeleben Physical Review B 41 (8), 5271, 1990 | 154 | 1990 |
| Identification of EL2 in GaAs HJ Von Bardeleben, D Stievenard, JC Bourgoin, A Huber Applied physics letters 47 (9), 970-972, 1985 | 146 | 1985 |
| Imaging the wave-function amplitudes in cleaved semiconductor quantum boxes B Grandidier, YM Niquet, B Legrand, JP Nys, C Priester, D Stiévenard, ... Physical Review Letters 85 (5), 1068, 2000 | 140 | 2000 |
| Irradiation-induced defects in p-type GaAs D Stievenard, X Boddaert, JC Bourgoin Physical Review B 34 (6), 4048, 1986 | 127 | 1986 |
| Nanooxidation of silicon with an atomic force microscope: A pulsed voltage technique B Legrand, D Stievenard Applied physics letters 74 (26), 4049-4051, 1999 | 126 | 1999 |
| Scanning tunneling microscopy and scanning tunneling spectroscopy of self-assembled InAs quantum dots B Legrand, B Grandidier, JP Nys, D Stiévenard, JM Gérard, ... Applied physics letters 73 (1), 96-98, 1998 | 120 | 1998 |
| Atomic-scale study of GaMnAs/GaAs layers B Grandidier, JP Nys, C Delerue, D Stievenard, Y Higo, M Tanaka Applied Physics Letters 77 (24), 4001-4003, 2000 | 117 | 2000 |
| Electric force microscopy of individually charged nanoparticles on conductors: An analytical model for quantitative charge imaging T Mélin, H Diesinger, D Deresmes, D Stiévenard Physical Review B 69 (3), 035321, 2004 | 111 | 2004 |
| Defects in porous p-type Si: An electron-paramagnetic-resonance study HJ Von Bardeleben, D Stievenard, A Grosman, C Ortega, J Siejka Physical Review B 47 (16), 10899, 1993 | 103 | 1993 |
| Direct evidence for shallow acceptor states with nonspherical symmetry in GaAs G Mahieu, B Grandidier, D Deresmes, JP Nys, D Stiévenard, P Ebert Physical review letters 94 (2), 026407, 2005 | 94 | 2005 |
| Silicon surface nano-oxidation using scanning probe microscopy D Stiévenard, B Legrand Progress in surface science 81 (2-3), 112-140, 2006 | 88 | 2006 |
| Novel insights into the charge storage mechanism in pseudocapacitive vanadium nitride thick films for high-performance on-chip micro-supercapacitors K Robert, D Stiévenard, D Deresmes, C Douard, A Iadecola, D Troadec, ... Energy & Environmental Science 13 (3), 949-957, 2020 | 81 | 2020 |
| Charge injection in individual silicon nanoparticles deposited on a conductive substrate T Melin, D Deresmes, D Stiévenard Applied physics letters 81 (26), 5054-5056, 2002 | 77 | 2002 |
