| Binary atomic silicon logic T Huff, H Labidi, M Rashidi, L Livadaru, T Dienel, R Achal, W Vine, ... Nature Electronics 1 (12), 636-643, 2018 | 68 | 2018 |
| Lithography for robust and editable atomic-scale silicon devices and memories R Achal, M Rashidi, J Croshaw, D Churchill, M Taucer, T Huff, M Cloutier, ... Nature communications 9 (1), 2778, 2018 | 61 | 2018 |
| Atomic white-out: Enabling atomic circuitry through mechanically induced bonding of single hydrogen atoms to a silicon surface TR Huff, H Labidi, M Rashidi, M Koleini, R Achal, MH Salomons, ... ACS nano 11 (9), 8636-8642, 2017 | 56 | 2017 |
| Initiating and monitoring the evolution of single electrons within atom-defined structures M Rashidi, W Vine, T Dienel, L Livadaru, J Retallick, T Huff, K Walus, ... Physical review letters 121 (16), 166801, 2018 | 35 | 2018 |
| Indications of chemical bond contrast in AFM images of a hydrogen-terminated silicon surface H Labidi, M Koleini, T Huff, M Salomons, M Cloutier, J Pitters, RA Wolkow Nature communications 8 (1), 14222, 2017 | 31 | 2017 |
| Electrostatic landscape of a hydrogen-terminated silicon surface probed by a moveable quantum dot TR Huff, T Dienel, M Rashidi, R Achal, L Livadaru, J Croshaw, RA Wolkow ACS nano 13 (9), 10566-10575, 2019 | 26 | 2019 |
| SiQAD: A design and simulation tool for atomic silicon quantum dot circuits SSH Ng, J Retallick, HN Chiu, R Lupoiu, L Livadaru, T Huff, M Rashidi, ... IEEE Transactions on Nanotechnology 19, 137-146, 2020 | 23 | 2020 |
| Resolving and tuning carrier capture rates at a single silicon atom gap state M Rashidi, E Lloyd, TR Huff, R Achal, M Taucer, JJ Croshaw, RA Wolkow ACS nano 11 (11), 11732-11738, 2017 | 17 | 2017 |
| New fabrication technique for highly sensitive qPlus sensor with well-defined spring constant H Labidi, M Kupsta, T Huff, M Salomons, D Vick, M Taucer, J Pitters, ... Ultramicroscopy 158, 33-37, 2015 | 13 | 2015 |
| Atomic defect classification of the H–Si (100) surface through multi-mode scanning probe microscopy J Croshaw, T Dienel, T Huff, R Wolkow Beilstein Journal of Nanotechnology 11 (1), 1346-1360, 2020 | 10 | 2020 |
| Detecting and Directing Single Molecule Binding Events on H-Si (100) with Application to Ultradense Data Storage R Achal, M Rashidi, J Croshaw, TR Huff, RA Wolkow ACS nano 14 (3), 2947-2955, 2019 | 7 | 2019 |
| Ionic charge distributions in silicon atomic surface wires J Croshaw, T Huff, M Rashidi, J Wood, E Lloyd, J Pitters, RA Wolkow Nanoscale 13 (5), 3237-3245, 2021 | 3 | 2021 |
| Multiple silicon atom quantum dot and devices inclusive thereof RA Wolkow, R Achal, H Taleana, H Labidi, L Livadaru, P Paul, M Rashidi US Patent 10,937,959, 2021 | 1 | 2021 |
| Atomic defects of the hydrogen-terminated Silicon (100)-2x1 surface imaged with STM and nc-AFM J Croshaw, T Dienel, T Huff, RA Wolkow arXiv preprint arXiv:2002.09138, 2020 | 1 | 2020 |
| Initiating and monitoring the evolution of single electrons within atom-defined structures R Wolkow, M Rashidi, W Vine, T Dienel, L Livadaru, H Taleana, ... US Patent App. 17/361,683, 2021 | | 2021 |
| Lithography for editable atomic-scale devices and memories R Achal, RA Wolkow, J Pitters, M Cloutier, M Rashidi, M Taucer, ... US Patent App. 17/253,768, 2021 | | 2021 |
| Initiating and monitoring the evolution of single electrons within atom-defined structures R Wolkow, M Rashidi, W Vine, T Dienel, L Livadaru, H Taleana, ... US Patent 11,047,877, 2021 | | 2021 |
| Multiple germanium atom quantum dot and devices inclusive thereof RA Wolkow, R Achal, H Taleana, H Labidi, L Livadaru, P Paul, M Rashidi US Patent App. 17/167,295, 2021 | | 2021 |
| Atomic Defects of the Hydrogen-Terminated Silicon Surface Imaged with nc-AFM J Croshaw, T Dienel, T Huff, R Wolkow Bulletin of the American Physical Society 65, 2020 | | 2020 |
| Atomic Electronics With Silicon Dangling Bonds: Error Correction, Logical Gates, and Electrostatic Environment T Huff | | 2020 |
Robert WolkowProfessor of Physics, University of AlbertaVerified email at ualberta.ca
