| Silicon dioxide films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition RG Andosca, WJ Varhue, E Adams Journal of applied physics 72 (3), 1126-1132, 1992 | 58 | 1992 |
| Epitaxial film thickness in the low‐temperature growth of Si (100) by plasma enhanced chemical vapor deposition WJ Varhue, JL Rogers, PS Andry, E Adams Applied physics letters 68 (3), 349-351, 1996 | 42 | 1996 |
| Comparison of diamond-like carbon film deposition by electron cyclotron resonance with benzene and methane PS Andry, PW Pastel, WJ Varhue Journal of materials research 11 (1), 221-228, 1996 | 40 | 1996 |
| Erbium‐doped silicon films grown by plasma‐enhanced chemical‐vapor deposition JL Rogers, PS Andry, WJ Varhue, E Adams, M Lavoie, PB Klein Journal of applied physics 78 (10), 6241-6248, 1995 | 40 | 1995 |
| Growth of Er‐doped silicon using metalorganics by plasma‐enhanced chemical vapor deposition PS Andry, WJ Varhue, F Ladipo, K Ahmed, E Adams, M Lavoie, PB Klein, ... Journal of applied physics 80 (1), 551-558, 1996 | 35 | 1996 |
| A MEMS-Based Catalytic Microreactor for a HOMonopropellant Micropropulsion System SJ Widdis, K Asante, DL Hitt, MW Cross, WJ Varhue, MR McDevitt IEEE/ASME transactions on mechatronics 18 (4), 1250-1258, 2013 | 29 | 2013 |
| Very-low-frequency electromagnetic field detector with data acquisition SA Hanna, Y Motai, WJ Varhue, S Titcomb IEEE Transactions on Instrumentation and Measurement 58 (1), 129-140, 2008 | 27 | 2008 |
| Plasma enhanced CVD process for rapidly growing semiconductor films WJ Varhue US Patent 6,313,017, 2001 | 26 | 2001 |
| Deposition of Y2O3 by plasma enhanced organometallic chemical vapor deposition using an electron cyclotron resonance source WJ Varhue, M Massimo, JM Carrulli, V Baranauskas, E Adams, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 11 (4 …, 1993 | 26 | 1993 |
| Raman scattering and the π‐orbitals in amorphous carbon films K Sinha, J Menendez, OF Sankey, DA Johnson, WJ Varhue, JN Kidder, ... Applied physics letters 60 (5), 562-564, 1992 | 25 | 1992 |
| The effect of radio frequency substrate biasing in the deposition of diamond‐like carbon films in an electron cyclotron resonance discharge PW Pastel, WJ Varhue Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 9 (3 …, 1991 | 25 | 1991 |
| Low‐temperature homoepitaxial growth of Si by electron cyclotron resonance plasma enhanced chemical vapor deposition JL Rogers, PS Andry, WJ Varhue, P McGaughnea, E Adams, R Kontra Applied physics letters 67 (7), 971-973, 1995 | 24 | 1995 |
| Diamond-like carbon films prepared by rf substrate biasing in an ECR discharge W Varhue, P Pastel Journal of Materials Research 5 (11), 2441-2444, 1990 | 24 | 1990 |
| Structural evolution and characterization of heteroepitaxial GaSb thin films on Si (111) substrates T Nguyen, W Varhue, M Cross, R Pino, E Adams, M Lavoie, J Lee Journal of applied physics 101 (7), 2007 | 23 | 2007 |
| Electron cyclotron resonance plasma etching of photoresist at cryogenic temperatures W Varhue, J Burroughs, W Mlynko Journal of applied physics 72 (7), 3050-3057, 1992 | 22 | 1992 |
| Control of ruthenium oxide nanorod length in reactive sputtering MW Cross, WJ Varhue, DL Hitt, E Adams Nanotechnology 19 (4), 045611, 2008 | 19 | 2008 |
| Lamb-wave microdevices fabricated on monolithic single crystal silicon wafers D Fischer, WJ Varhue, J Wu, CA Whiting Journal of Microelectromechanical systems 9 (1), 88-93, 2000 | 19 | 2000 |
| Low temperature growth of Si by PECVD WJ Varhue, PS Andry, JL Rogers, E Adams, R Kontra, M Lovioe Solid State Technology 39 (6), 163-168, 1996 | 18 | 1996 |
| Radiative melting of crystalline ruthenium oxide nanorods MW Cross, WJ Varhue Nanotechnology 19 (43), 435705, 2008 | 15 | 2008 |
| Comparison of two surface preparations used in the homoepitaxial growth of silicon films by plasma enhanced chemical vapor deposition S Reidy, WJ Varhue, M Lavoie, S Mongeon, E Adams Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003 | 15 | 2003 |
