Xulu Zeng
Xulu Zeng
PhD, Solid State Physics, NanoLund, Lund University
Verified email at ftf.lth.se
Cited by
Cited by
InxGa1–xP Nanowire Growth Dynamics Strongly Affected by Doping Using Diethylzinc
G Otnes, M Heurlin, X Zeng, MT Borgstrom
Nano letters 17 (2), 702-707, 2017
Absorption and transmission of light in III–V nanowire arrays for tandem solar cell applications
N Anttu, V Dagytė, X Zeng, G Otnes, M Borgström
Nanotechnology 28 (20), 205203, 2017
InP/GaInP nanowire tunnel diodes
X Zeng, G Otnes, M Heurlin, RT Mourão, MT Borgström
Nano Research 11 (5), 2523-2531, 2018
Intersubband quantum disc-in-nanowire photodetectors with normal-incidence response in the long-wavelength infrared
M Karimi, M Heurlin, S Limpert, V Jain, X Zeng, I Geijselaers, A Nowzari, ...
Nano letters 18 (1), 365-372, 2018
Carrier recombination processes in gallium indium phosphide nanowires
W Zhang, X Zeng, X Su, X Zou, PA Mante, MT Borgstrom, A Yartsev
Nano letters 17 (7), 4248-4254, 2017
Nanobeam X-ray fluorescence dopant mapping reveals dynamics of in situ Zn-doping in nanowires
A Troian, G Otnes, X Zeng, L Chayanun, V Dagyte, S Hammarberg, ...
Nano letters 18 (10), 6461-6468, 2018
Effect of hydrogen chloride etching on carrier recombination processes of indium phosphide nanowires
X Su, X Zeng, H Němec, X Zou, W Zhang, MT Borgström, A Yartsev
Nanoscale 11 (40), 18550-18558, 2019
Growth kinetics of Ga x In (1− x) P nanowires using triethylgallium as Ga precursor
V Dagytė, M Heurlin, X Zeng, MT Borgström
Nanotechnology 29 (39), 394001, 2018
The anisotropic distribution of dislocations and tilts in metamorphic GaInAs/AlInAs buffers grown on GaAs substrates with miscut angles toward (1 1 1) A
Y Sun, K Li, J Dong, X Zeng, S Yu, Y Zhao, C Zhao, H Yang
Journal of alloys and compounds 597, 45-49, 2014
Effects of substrate miscut on dislocation glide in metamorphic (Al) GaInP buffers
KL Li, YR Sun, JR Dong, YM Zhao, SZ Yu, CY Zhao, XL Zeng, H Yang
Journal of crystal growth 380, 261-267, 2013
Time-resolved photoluminescence characterization of GaAs nanowire arrays on native substrate
V Dagytė, E Barrigón, W Zhang, X Zeng, M Heurlin, G Otnes, N Anttu, ...
Nanotechnology 28 (50), 505706, 2017
High Responsivity of InP/InAsP Nanowire Array Broadband Photodetectors Enhanced by Optical Gating
M Karimi, X Zeng, B Witzigmann, L Samuelson, MT Borgström, ...
Nano letters 19 (12), 8424-8430, 2019
Three-dimensional imaging of beam-induced biasing of InP/GaInP tunnel diodes
C Cordoba, X Zeng, D Wolf, A Lubk, E Barrigón, MT Borgstrom, ...
Nano letters 19 (6), 3490-3497, 2019
Electrical and optical evaluation of n-type doping in In x Ga (1− x) P nanowires
X Zeng, RT Mourão, G Otnes, O Hultin, V Dagytė, M Heurlin, ...
Nanotechnology 29 (25), 255701, 2018
InGaAsP/InGaAs tandem photovoltaic devices for four-junction solar cells
Y Zhao, J Dong, K Li, Y Sun, X Zeng, Y He, S Yu, H Yang
Journal of Semiconductors 36 (4), 044011-4, 2015
Nanowire photodetectors with embedded quantum heterostructures for infrared detection
M Karimi, M Heurlin, S Limpert, V Jain, E Mansouri, X Zeng, L Samuelson, ...
Infrared Physics & Technology 96, 209-212, 2019
Control of threading dislocations by strain engineering in GaInP buffers grown on GaAs substrates
KL Li, YR Sun, JR Dong, Y He, XL Zeng, YM Zhao, SZ Yu, CY Zhao
Thin Solid Films 593, 193-197, 2015
Effects of Si doping on the strain relaxation of metamorphic (Al) GaInP buffers grown on GaAs substrates
KL Li, JR Dong, YR Sun, XL Zeng, YM Zhao, SZ Yu, CY Zhao, H Yang
Applied surface science 288, 482-487, 2014
Embedded sacrificial AlAs segments in GaAs nanowires for substrate reuse
RJ Jam, JP Beech, X Zeng, J Johansson, L Samuelson, H Pettersson, ...
Nanotechnology 31 (20), 204002, 2020
Effects of substrate miscut on threading dislocation distribution in metamorphic GaInAs/AlInAs buffers
Y Sun, K Li, J Dong, X Zeng, S Yu, Y Zhao, C Zhao, H Yang
Journal of Materials Science: Materials in Electronics 25 (1), 581-585, 2014
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