| Recent developments in p‐Type oxide semiconductor materials and devices Z Wang, PK Nayak, JA Caraveo‐Frescas, HN Alshareef Advanced Materials 28 (20), 3831-3892, 2016 | 632 | 2016 |
| Record mobility in transparent p-type tin monoxide films and devices by phase engineering JA Caraveo-Frescas, PK Nayak, HA Al-Jawhari, DB Granato, ... ACS nano 7 (6), 5160-5167, 2013 | 365 | 2013 |
| Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer PK Nayak, JA Caraveo-Frescas, Z Wang, MN Hedhili, QX Wang, ... Scientific reports 4 (1), 4672, 2014 | 142 | 2014 |
| Enhancement of p-type mobility in tin monoxide by native defects DB Granato, JA Caraveo-Frescas, HN Alshareef, U Schwingenschlögl Applied Physics Letters 102 (21), 2013 | 66 | 2013 |
| Transparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors JA Caraveo-Frescas, HN Alshareef Applied Physics Letters 103 (22), 2013 | 63 | 2013 |
| Effect of the piezoelectric ceramic filler dielectric constant on the piezoelectric properties of PZT-epoxy composites J Khaliq, DB Deutz, JAC Frescas, P Vollenberg, T Hoeks, ... Ceramics International 43 (2), 2774-2779, 2017 | 60 | 2017 |
| Low temperature processed complementary metal oxide semiconductor (CMOS) device by oxidation effect from capping layer Z Wang, HA Al-Jawhari, PK Nayak, JA Caraveo-Frescas, N Wei, ... Scientific reports 5 (1), 9617, 2015 | 60 | 2015 |
| P-Type Cu2O/SnO Bilayer Thin Film Transistors Processed at Low Temperatures HA Al-Jawhari, JA Caraveo-Frescas, MN Hedhili, HN Alshareef ACS applied materials & interfaces 5 (19), 9615-9619, 2013 | 49 | 2013 |
| Hybrid dual gate ferroelectric memory for multilevel information storage MA Khan, JA Caraveo-Frescas, HN Alshareef Organic Electronics 16, 9-17, 2015 | 46 | 2015 |
| Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility JA Caraveo-Frescas, MA Khan, HN Alshareef Scientific Reports 4 (1), 5243, 2014 | 45 | 2014 |
| Electroforming-free resistive switching memory effect in transparent p-type tin monoxide MK Hota, JA Caraveo-Frescas, MA McLachlan, HN Alshareef Applied Physics Letters 104 (15), 2014 | 31 | 2014 |
| Methods and systems for making piezoelectric cantilever actuators JA Caraveo, ALH Ibrahim, MN Almadhoun, AHM Aldubayan US Patent 10,062,832, 2018 | 28* | 2018 |
| ACS Nano 7, 5160 (2013) JA Caraveo-Frescas, PK Nayak, HA Al-Jawhari, DB Granato, ... | 26 | |
| Integrated piezoelectric cantilever actuator and transistor for touch input and haptic feedback applications JAC Frescas, ALH Ibrahim, MM Almadhoun, R Bella US Patent 10,061,386, 2018 | 25 | 2018 |
| Effect of Gate Dielectrics on the Performance of P-Type Cu2O TFTs Processed at Room Temperature H Al-Jawhari, JA Caraveo-Frescsa Advanced Materials Research 856, 215-219, 2014 | 22 | 2014 |
| Deep UV sensors enabling solar-blind flame detectors for large-area applications C Avila-Avendano, MI Pintor-Monroy, A Ortiz-Conde, JA Caraveo-Frescas, ... IEEE Sensors Journal 21 (13), 14815-14821, 2021 | 17 | 2021 |
| Six‐Fold Mobility Improvement of Indium‐Zinc Oxide Thin‐Film Transistors Using a Simple Water Treatment PK Nayak, JA Caraveo‐Frescas, Z Wang, MN Hedhili, HN Alshareef Advanced Electronic Materials 1 (6), 1500014, 2015 | 14 | 2015 |
| 10B Conformal Doping for Highly Efficient Thermal Neutron Detectors SS Nandagopala Krishnan, C Avila-Avendano, Z Shamsi, ... ACS sensors 5 (9), 2852-2857, 2020 | 11 | 2020 |
| Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films PK Nayak, JA Caraveo-Frescas, U Bhansali, HN Alshareef Applied Physics Letters 100 (25), 2012 | 10 | 2012 |
| 3D Microstructured Inorganic Perovskite Materials for Thermal Neutron Detection JA Caraveo‐Frescas, MG Reyes‐Banda, L Fernandez‐Izquierdo, ... Advanced Materials Technologies 7 (6), 2100956, 2022 | 8 | 2022 |
Husam N AlshareefKAUST, Saudi Arabia; Univeristy of Texas at Dallas (Adjunct)Verified email at kaust.edu.sa
