J.A. Caraveo-Frescas
J.A. Caraveo-Frescas
Research Scientist at UTD
Verified email at kaust.edu.sa
Cited by
Cited by
Recent developments in p‐Type oxide semiconductor materials and devices
Z Wang, PK Nayak, JA Caraveo‐Frescas, HN Alshareef
Advanced Materials 28 (20), 3831-3892, 2016
Record mobility in transparent p-type tin monoxide films and devices by phase engineering
JA Caraveo-Frescas, PK Nayak, HA Al-Jawhari, DB Granato, ...
ACS nano 7 (6), 5160-5167, 2013
Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer
PK Nayak, JA Caraveo-Frescas, Z Wang, MN Hedhili, QX Wang, ...
Scientific reports 4 (1), 1-7, 2014
Low temperature processed complementary metal oxide semiconductor (CMOS) device by oxidation effect from capping layer
Z Wang, HA Al-Jawhari, PK Nayak, JA Caraveo-Frescas, N Wei, ...
Scientific reports 5 (1), 1-6, 2015
Transparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors
JA Caraveo-Frescas, HN Alshareef
Applied Physics Letters 103 (22), 222103, 2013
Enhancement of p-type mobility in tin monoxide by native defects
DB Granato, JA Caraveo-Frescas, HN Alshareef, U Schwingenschlögl
Applied Physics Letters 102 (21), 212105, 2013
Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility
JA Caraveo-Frescas, MA Khan, HN Alshareef
Scientific reports 4 (1), 1-7, 2014
P-Type Cu2O/SnO Bilayer Thin Film Transistors Processed at Low Temperatures
HA Al-Jawhari, JA Caraveo-Frescas, MN Hedhili, HN Alshareef
ACS applied materials & interfaces 5 (19), 9615-9619, 2013
Hybrid dual gate ferroelectric memory for multilevel information storage
MA Khan, JA Caraveo-Frescas, HN Alshareef
Organic Electronics 16, 9-17, 2015
Electroforming-free resistive switching memory effect in transparent p-type tin monoxide
MK Hota, JA Caraveo-Frescas, MA McLachlan, HN Alshareef
Applied Physics Letters 104 (15), 152104, 2014
Effect of the piezoelectric ceramic filler dielectric constant on the piezoelectric properties of PZT-epoxy composites
J Khaliq, DB Deutz, JAC Frescas, P Vollenberg, T Hoeks, ...
Ceramics International 43 (2), 2774-2779, 2017
ACS Nano 7, 5160 (2013)
JA Caraveo-Frescas, PK Nayak, HA Al-Jawhari, DB Granato, ...
Methods and systems for making piezoelectric cantilever actuators
JA Caraveo, ALH Ibrahim, MN Almadhoun, AHM Aldubayan
US Patent 10,062,832, 2018
Integrated piezoelectric cantilever actuator and transistor for touch input and haptic feedback applications
JAC Frescas, ALH Ibrahim, MM Almadhoun, R Bella
US Patent 10,061,386, 2018
Six‐Fold Mobility Improvement of Indium‐Zinc Oxide Thin‐Film Transistors Using a Simple Water Treatment
PK Nayak, JA Caraveo‐Frescas, Z Wang, MN Hedhili, HN Alshareef
Advanced Electronic Materials 1 (6), 1500014, 2015
Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films
PK Nayak, JA Caraveo-Frescas, US Bhansali, HN Alshareef
Applied Physics Letters 100 (25), 253507, 2012
Effect of gate dielectrics on the performance of p-type Cu2O TFTs processed at room temperature
HA Al-Jawhari, JA Caraveo-Frescsa
Advanced Materials Research 856, 215-219, 2014
Thermal history devices, systems for thermal history detection, and methods for thermal history detection
JAC Frescas, H Alshareef
US Patent 9,976,913, 2018
Controlling the Performance of P-type Cu 2 O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layer
HA Al-Jawhari, JA Caraveo-Frescas, MN Hedhili
Journal of Electronic Materials 44 (1), 117-120, 2015
10B Conformal Doping for Highly Efficient Thermal Neutron Detectors
SS Nandagopala Krishnan, C Avila-Avendano, Z Shamsi, ...
ACS sensors 5 (9), 2852-2857, 2020
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