J.A. Caraveo-Frescas
J.A. Caraveo-Frescas
Research Scientist at UTD
Verified email at kaust.edu.sa
Title
Cited by
Cited by
Year
Recent developments in p‐Type oxide semiconductor materials and devices
Z Wang, PK Nayak, JA Caraveo‐Frescas, HN Alshareef
Advanced Materials 28 (20), 3831-3892, 2016
3842016
Record mobility in transparent p-type tin monoxide films and devices by phase engineering
JA Caraveo-Frescas, PK Nayak, HA Al-Jawhari, DB Granato, ...
ACS nano 7 (6), 5160-5167, 2013
2752013
Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer
PK Nayak, JA Caraveo-Frescas, Z Wang, MN Hedhili, QX Wang, ...
Scientific reports 4 (1), 1-7, 2014
1122014
Low temperature processed complementary metal oxide semiconductor (CMOS) device by oxidation effect from capping layer
Z Wang, HA Al-Jawhari, PK Nayak, JA Caraveo-Frescas, N Wei, ...
Scientific reports 5 (1), 1-6, 2015
512015
Transparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors
JA Caraveo-Frescas, HN Alshareef
Applied Physics Letters 103 (22), 222103, 2013
512013
Enhancement of p-type mobility in tin monoxide by native defects
DB Granato, JA Caraveo-Frescas, HN Alshareef, U Schwingenschlögl
Applied Physics Letters 102 (21), 212105, 2013
462013
Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility
JA Caraveo-Frescas, MA Khan, HN Alshareef
Scientific reports 4 (1), 1-7, 2014
432014
P-Type Cu2O/SnO Bilayer Thin Film Transistors Processed at Low Temperatures
HA Al-Jawhari, JA Caraveo-Frescas, MN Hedhili, HN Alshareef
ACS applied materials & interfaces 5 (19), 9615-9619, 2013
392013
Hybrid dual gate ferroelectric memory for multilevel information storage
MA Khan, JA Caraveo-Frescas, HN Alshareef
Organic Electronics 16, 9-17, 2015
382015
Electroforming-free resistive switching memory effect in transparent p-type tin monoxide
MK Hota, JA Caraveo-Frescas, MA McLachlan, HN Alshareef
Applied Physics Letters 104 (15), 152104, 2014
242014
Effect of the piezoelectric ceramic filler dielectric constant on the piezoelectric properties of PZT-epoxy composites
J Khaliq, DB Deutz, JAC Frescas, P Vollenberg, T Hoeks, ...
Ceramics International 43 (2), 2774-2779, 2017
232017
ACS Nano 7, 5160 (2013)
JA Caraveo-Frescas, PK Nayak, HA Al-Jawhari, DB Granato, ...
18
Methods and systems for making piezoelectric cantilever actuators
JA Caraveo, ALH Ibrahim, MN Almadhoun, AHM Aldubayan
US Patent 10,062,832, 2018
16*2018
Integrated piezoelectric cantilever actuator and transistor for touch input and haptic feedback applications
JAC Frescas, ALH Ibrahim, MM Almadhoun, R Bella
US Patent 10,061,386, 2018
132018
Six‐Fold Mobility Improvement of Indium‐Zinc Oxide Thin‐Film Transistors Using a Simple Water Treatment
PK Nayak, JA Caraveo‐Frescas, Z Wang, MN Hedhili, HN Alshareef
Advanced Electronic Materials 1 (6), 1500014, 2015
122015
Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films
PK Nayak, JA Caraveo-Frescas, US Bhansali, HN Alshareef
Applied Physics Letters 100 (25), 253507, 2012
102012
Effect of gate dielectrics on the performance of p-type Cu2O TFTs processed at room temperature
HA Al-Jawhari, JA Caraveo-Frescsa
Advanced Materials Research 856, 215-219, 2014
92014
Thermal history devices, systems for thermal history detection, and methods for thermal history detection
JAC Frescas, H Alshareef
US Patent 9,976,913, 2018
62018
Controlling the Performance of P-type Cu 2 O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layer
HA Al-Jawhari, JA Caraveo-Frescas, MN Hedhili
Journal of Electronic Materials 44 (1), 117-120, 2015
62015
10B Conformal Doping for Highly Efficient Thermal Neutron Detectors
SS Nandagopala Krishnan, C Avila-Avendano, Z Shamsi, ...
ACS sensors 5 (9), 2852-2857, 2020
42020
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