YU CAI
Title
Cited by
Cited by
Year
Error patterns in MLC NAND flash memory: Measurement, characterization, and analysis
Y Cai, EF Haratsch, O Mutlu, K Mai
2012 Design, Automation & Test in Europe Conference & Exhibition (DATE), 521-526, 2012
3532012
Threshold voltage distribution in MLC NAND flash memory: Characterization, analysis, and modeling
Y Cai, EF Haratsch, O Mutlu, K Mai
2013 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2013
2532013
Flash correct-and-refresh: Retention-aware error management for increased flash memory lifetime
Y Cai, G Yalcin, O Mutlu, EF Haratsch, A Cristal, OS Unsal, K Mai
2012 IEEE 30th International Conference on Computer Design (ICCD), 94-101, 2012
2282012
Data retention in MLC NAND flash memory: Characterization, optimization, and recovery
Y Cai, Y Luo, EF Haratsch, K Mai, O Mutlu
2015 IEEE 21st International Symposium on High Performance Computer …, 2015
1952015
Program interference in MLC NAND flash memory: Characterization, modeling, and mitigation
Y Cai, O Mutlu, EF Haratsch, K Mai
2013 IEEE 31st International Conference on Computer Design (ICCD), 123-130, 2013
1742013
Error characterization, mitigation, and recovery in flash-memory-based solid-state drives
Y Cai, S Ghose, EF Haratsch, Y Luo, O Mutlu
Proceedings of the IEEE 105 (9), 1666-1704, 2017
1332017
Read disturb errors in MLC NAND flash memory: Characterization, mitigation, and recovery
Y Cai, Y Luo, S Ghose, O Mutlu
2015 45th Annual IEEE/IFIP International Conference on Dependable Systems …, 2015
1312015
Cross point switch with out-of-band parameter fine tuning
X Zhao, M Wong
US Patent App. 10/210,041, 2004
1032004
WARM: Improving NAND flash memory lifetime with write-hotness aware retention management
Y Luo, Y Cai, S Ghose, J Choi, O Mutlu
2015 31st Symposium on Mass Storage Systems and Technologies (MSST), 1-14, 2015
912015
Neighbor-cell assisted error correction for MLC NAND flash memories
Y Cai, G Yalcin, O Mutlu, EF Haratsch, O Unsal, A Cristal, K Mai
ACM SIGMETRICS Performance Evaluation Review 42 (1), 491-504, 2014
862014
Vulnerabilities in MLC NAND flash memory programming: Experimental analysis, exploits, and mitigation techniques
Y Cai, S Ghose, Y Luo, K Mai, O Mutlu, EF Haratsch
2017 IEEE International Symposium on High Performance Computer Architecture …, 2017
852017
ERROR ANALYSIS AND RETENTION-AWARE ERROR MANAGEMENT FOR NAND FLASH MEMORY.
Y Cai, G Yalcin, O Mutlu, EF Haratsch, A Crista, OS Unsal, K Mai
Intel Technology Journal 17 (1), 2013
742013
HeatWatch: Improving 3D NAND flash memory device reliability by exploiting self-recovery and temperature awareness
Y Luo, S Ghose, Y Cai, EF Haratsch, O Mutlu
2018 IEEE International Symposium on High Performance Computer Architecture …, 2018
532018
Enabling accurate and practical online flash channel modeling for modern MLC NAND flash memory
Y Luo, S Ghose, Y Cai, EF Haratsch, O Mutlu
IEEE Journal on Selected Areas in Communications 34 (9), 2294-2311, 2016
442016
FPGA-based solid-state drive prototyping platform
Y Cai, EF Haratsch, M McCartney, K Mai
2011 IEEE 19th Annual International Symposium on Field-Programmable Custom …, 2011
442011
Errors in flash-memory-based solid-state drives: Analysis, mitigation, and recovery
Y Cai, S Ghose, EF Haratsch, Y Luo, O Mutlu
arXiv preprint arXiv:1711.11427, 2017
382017
Improving 3D NAND flash memory lifetime by tolerating early retention loss and process variation
Y Luo, S Ghose, Y Cai, EF Haratsch, O Mutlu
Proceedings of the ACM on Measurement and Analysis of Computing Systems 2 (3 …, 2018
322018
Improving the reliability of chip-off forensic analysis of NAND flash memory devices
A Fukami, S Ghose, Y Luo, Y Cai, O Mutlu
Digital Investigation 20, S1-S11, 2017
302017
Mitigation of write errors in multi-level cell flash memory through adaptive error correction code decoding
AHS Alhussien, I Djurdjevic, Y Cai, EF Haratsch, Y Li, ET Cohen
US Patent 9,319,073, 2016
292016
Highly parallel FPGA emulation for LDPC error floor characterization in perpendicular magnetic recording channel
Y Cai, S Jeon, K Mai, BVKV Kumar
IEEE transactions on magnetics 45 (10), 3761-3764, 2009
252009
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