Simon Fafard

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Karin HinzerProfessor, School of Electrical Engineering and Computer Science, University of OttawaVerified email at uottawa.ca
Z. R. WasilewskiElectrical and Computer Engineering & Waterloo Institute for Nanotechnology, University of WaterlooVerified email at uwaterloo.ca
Pawel HawrylakProfessor of Physics, University of OttawaVerified email at uottawa.ca
Vincent AimezProfesseur, Université de SherbrookeVerified email at USherbrooke.ca
Manfred BayerExperimentelle Physik 2, Fakultät Physik, TU DortmundVerified email at tu-dortmund.de
Richard ArèsUniversité de SherbrookeVerified email at usherbrooke.ca
Abdelatif Jaouad3IT, Université de SherbrookeVerified email at usherbrooke.ca
John McCaffreyPhysicist, National Research Council of CanadaVerified email at nrc-cnrc.gc.ca
Claudine Nì. AllenDépartement de physique, de génie physique et d'optique, COPL, Université LavalVerified email at phy.ulaval.ca
Marek KorkusinskiNational Research Council of CanadaVerified email at nrc-cnrc.gc.ca
Maxime DarnonCNRS-LN2Verified email at usherbrooke.ca
Abderraouf BoucherifUniversité de SherbrookeVerified email at usherbrooke.ca
Artur TuralaUniversité de SherbrookeVerified email at usherbrooke.ca
Philip PooleNational Research CouncilVerified email at nrc-cnrc.gc.ca
Boussairi BouzaziInstitute of Technological Innovation, University of SherbrookeVerified email at usherbrooke.ca
Arkadiusz WójsWroclaw University of Science and TechnologyVerified email at pwr.edu.pl
Trevor James HallProfessor, School of Electrical Engineering & Computer Science, University of OttawaVerified email at uottawa.ca
Michael SpannerNational Research Council of CanadaVerified email at nrc.ca
John BowersProfessor of Electrical and Computer Engineering, UCSBVerified email at ece.ucsb.edu
Paola BorriProfessor at Cardiff UniversityVerified email at cf.ac.uk

Simon Fafard

Professor of Electrical Engineering, Universite de Sherbrooke

Verified email at usherbrooke.ca - Homepage

III-V semiconductors Epitaxy optoelectronics photovoltaics nanostructures


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Fine structure of neutral and charged excitons in self-assembled In (Ga) As/(Al) GaAs quantum dots M Bayer, G Ortner, O Stern, A Kuther, AA Gorbunov, A Forchel, ... Physical Review B 65 (19), 195315, 2002	1371	2002
Coupling and entangling of quantum states in quantum dot molecules M Bayer, P Hawrylak, K Hinzer, S Fafard, M Korkusinski, ZR Wasilewski, ... Science 291 (5503), 451-453, 2001	1000	2001
Hidden symmetries in the energy levels of excitonic ‘artificial atoms’ M Bayer, O Stern, P Hawrylak, S Fafard, A Forchel Nature 405 (6789), 923-926, 2000	555	2000
Electronic structure and magneto-optics of self-assembled quantum dots A Wojs, P Hawrylak, S Fafard, L Jacak Physical Review B 54 (8), 5604, 1996	480	1996
Size and shape engineering of vertically stacked self-assembled quantum dots ZR Wasilewski, S Fafard, JP McCaffrey Journal of crystal growth 201, 1131-1135, 1999	473	1999
Quantum dot infrared photodetectors HC Liu, M Gao, J McCaffrey, ZR Wasilewski, S Fafard Applied Physics Letters 78 (1), 79-81, 2001	402	2001
Red-emitting semiconductor quantum dot lasers S Fafard, K Hinzer, S Raymond, M Dion, J McCaffrey, Y Feng, ... Science 274 (5291), 1350-1353, 1996	391	1996
State filling and time-resolved photoluminescence of excited states in As/GaAs self-assembled quantum dots S Raymond, S Fafard, PJ Poole, A Wojs, P Hawrylak, S Charbonneau, ... Physical Review B 54 (16), 11548, 1996	322	1996
State filling and time-resolved photoluminescence of excited states in As/GaAs self-assembled quantum dots S Raymond, S Fafard, PJ Poole, A Wojs, P Hawrylak, S Charbonneau, ... Physical Review B 54 (16), 11548, 1996	316	1996
Time‐resolved optical characterization of InGaAs/GaAs quantum dots G Wang, S Fafard, D Leonard, JE Bowers, JL Merz, PM Petroff Applied physics letters 64 (21), 2815-2817, 1994	308	1994
Spatially resolved visible luminescence of self-assembled semiconductor quantum dots R Leon, PM Petroff, D Leonard, S Fafard Science 267 (5206), 1966-1968, 1995	290	1995
Phonons and radiative recombination in self-assembled quantum dots S Farfad, R Leon, D Leonard, JL Merz, PM Petroff Physical Review B 52 (8), 5752, 1995	270	1995
Manipulating the energy levels of semiconductor quantum dots S Fafard, ZR Wasilewski, CN Allen, D Picard, M Spanner, JP McCaffrey, ... Physical Review B 59 (23), 15368, 1999	253	1999
Molecular‐beam epitaxy growth of quantum dots from strained coherent uniform islands of InGaAs on GaAs D Leonard, M Krishnamurthy, S Fafard, JL Merz, PM Petroff Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1994	241	1994
InAs self‐assembled quantum dots on InP by molecular beam epitaxy S Fafard, Z Wasilewski, J McCaffrey, S Raymond, S Charbonneau Applied Physics Letters 68 (7), 991-993, 1996	237	1996
Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs quantum dots S Fafard, D Leonard, JL Merz, PM Petroff Applied physics letters 65 (11), 1388-1390, 1994	225	1994
Intermixing in quantum-dot ensembles with sharp adjustable shells S Fafard, CN Allen Applied physics letters 75 (16), 2374-2376, 1999	218	1999
Visible luminescence from semiconductor quantum dots in large ensembles R Leon, S Fafard, D Leonard, JL Merz, PM Petroff Applied physics letters 67 (4), 521-523, 1995	211	1995
Passive integrated optics elements based on long-range surface plasmon polaritons R Charbonneau, C Scales, I Breukelaar, S Fafard, N Lahoud, G Mattiussi, ... Journal of Lightwave Technology 24 (1), 477-494, 2006	208	2006
Exciton transport in O: Evidence for excitonic superfluidity? E Fortin, S Fafard, A Mysyrowicz Physical review letters 70 (25), 3951, 1993	196	1993

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