First demonstration of a logic-process compatible junctionless ferroelectric FinFET synapse for neuromorphic applications M Seo, MH Kang, SB Jeon, H Bae, J Hur, BC Jang, S Yun, S Cho, WK Kim, ... IEEE Electron Device Letters 39 (9), 1445-1448, 2018 | 141 | 2018 |
Nano-electromechanical switch based on a physical unclonable function for highly robust and stable performance in harsh environments KM Hwang, JY Park, H Bae, SW Lee, CK Kim, M Seo, H Im, DH Kim, ... ACS nano 11 (12), 12547-12552, 2017 | 37 | 2017 |
Quantitative Analysis of Deuterium Annealing Effect on Poly-Si TFTs by Low Frequency Noise and DC – Characterization DH Kim, SK Lim, H Bae, CK Kim, SW Lee, M Seo, SY Kim, KM Hwang, ... IEEE Transactions on Electron Devices 65 (4), 1640-1644, 2018 | 15 | 2018 |
A comprehensive study of a single-transistor latch in vertical pillar-type FETs with asymmetric source and drain SW Lee, SY Kim, KM Hwang, IK Jin, J Hur, DH Kim, JW Son, WK Kim, ... IEEE Transactions on Electron Devices 65 (11), 5208-5212, 2018 | 11 | 2018 |
Multilevel States of Nano‐Electromechanical Switch for a PUF‐Based Security Device KM Hwang, WK Kim, IK Jin, SW Lee, YK Choi Small 15 (3), 1803825, 2019 | 10 | 2019 |
Method of inspecting by-products and method of manufacturing semiconductor device using the same J Bae, W Lee, HAN Yoonsung, H Han, K Hwang, Y Ko US Patent 9,660,186, 2017 | 10 | 2017 |
Semiconductor device and method of manufacturing the same K Hwang, J Bae, HH Park US Patent App. 13/045,805, 2011 | 9 | 2011 |
Magnetic random access memory devices and methods of manufacturing the same K Hwang, S Kim, ML Park, JS Bae, SW Lee US Patent 9,761,792, 2017 | 8 | 2017 |
Comprehensive study on the relation between low-frequency noise and asymmetric parasitic resistances in a vertical pillar-type FET SW Lee, T Bang, CK Kim, KM Hwang, BC Jang, DI Moon, H Bae, M Seo, ... IEEE Electron Device Letters 38 (8), 1008-1011, 2017 | 8 | 2017 |
Phase change memory devices and methods of manufacturing the same K Hwang, JS Bae, SU Kwon, KH Park US Patent 8,772,121, 2014 | 4 | 2014 |
Advanced characterization of nanoscale bridge in magnetic tunnel junction by 3-D EDS tomography K Hwang, J Bae, S Lee, M Park, K Park, J Choi, J Ahn, D Lee, S Ahn, ... Microscopy and Microanalysis 19 (S2), 1852-1853, 2013 | 2 | 2013 |
Microstructural Characterization in Reliability Measurement of Phase Change Random Access Memory J Bae, K Hwang, K Park, S Jeon, D Kang, S Park, J Ahn, S Kim, G Jeong, ... Japanese Journal of Applied Physics 50 (4S), 04DD12, 2011 | 2 | 2011 |
Magnetic random access memory devices and methods of manufacturing the same K Hwang, S Kim, ML Park, JS Bae, SW Lee US Patent 10,164,173, 2018 | 1 | 2018 |
Comparative Analysis of TEM and Atom Probe Tomography on GeSbTe Compositions in Phase Change Random Access Memory K Hwang, J Bae, K Park, S Jeon, J Ahn, S Kim, H Jeong, S Nam, G Jeong, ... Microscopy and Microanalysis 18 (S2), 1796-1797, 2012 | 1 | 2012 |
Physical Unclonable Function: Multilevel States of Nano‐Electromechanical Switch for a PUF‐Based Security Device (Small 3/2019) KM Hwang, WK Kim, IK Jin, SW Lee, YK Choi Small 15 (3), 1970015, 2019 | | 2019 |
Study of ion beam damage in magnetic tunnel junction on FIB prepared samples K Park, C Yang, K Kim, D Nam, K Hwang, J Bae, J Ahn, J Choi, S Park, ... Instrumentation, Metrology, and Standards for Nanomanufacturing, Optics, and …, 2013 | | 2013 |
Analysis on Structural and Chemical Behavior with Cycles in PRAM K Hwang, JB Park, J Bae, K Park, S Jeon, J Ahn, S Kim, G Jeong, C Kang, ... Microscopy and Microanalysis 17 (S2), 1758-1759, 2011 | | 2011 |
Microstructural Characterization in Reliability Measurement of PRAM J Bae, K Hwang, K Park, S Jeon, D Kang, S Park, J Ahn, S Kim, G Jeong, ... | | |