Degradation of hexagonal silicon-carbide-based bipolar devices M Skowronski, S Ha
Journal of applied physics 99 (1), 2006
526 2006 Determination of wurtzite GaN lattice polarity based on surface reconstruction AR Smith, RM Feenstra, DW Greve, MS Shin, M Skowronski, ...
Applied physics letters 72 (17), 2114-2116, 1998
414 1998 Microstructural characterization of α‐GaN films grown on sapphire by organometallic vapor phase epitaxy W Qian, M Skowronski, M De Graef, K Doverspike, LB Rowland, ...
Applied physics letters 66 (10), 1252-1254, 1995
382 1995 Reconstructions of GaN (0001) and (0001) surfaces: Ga-rich metallic structures AR Smith, RM Feenstra, DW Greve, MS Shin, M Skowronski, ...
JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B MICROELECTRONICS AND NANOMETER …, 1998
313 1998 Dislocation conversion in 4H silicon carbide epitaxy S Ha, P Mieszkowski, M Skowronski, LB Rowland
Journal of Crystal Growth 244 (3-4), 257-266, 2002
288 2002 Open‐core screw dislocations in GaN epilayers observed by scanning force microscopy and high‐resolution transmission electron microscopy W Qian, GS Rohrer, M Skowronski, K Doverspike, LB Rowland, ...
Applied physics letters 67 (16), 2284-2286, 1995
286 1995 Intracenter transitions in the dominant deep level (EL2) in GaAs M Kaminska, M Skowronski, J Lagowski, JM Parsey, HC Gatos
Applied physics letters 43 (3), 302-304, 1983
253 1983 Lifetime-limiting defects in n− 4H-SiC epilayers PB Klein, BV Shanabrook, SW Huh, AY Polyakov, M Skowronski, ...
Applied Physics Letters 88 (5), 2006
241 2006 Identification of the 0.82-eV Electron Trap, in GaAs, as an Isolated Antisite Arsenic Defect M Kamińska, M Skowroński, W Kuszko
Physical review letters 55 (20), 2204, 1985
220 1985 Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions JQ Liu, M Skowronski, C Hallin, R Söderholm, H Lendenmann
Applied physics letters 80 (5), 749-751, 2002
210 2002 Semi‐insulating 6H–SiC grown by physical vapor transport HMD Hobgood, RC Glass, G Augustine, RH Hopkins, J Jenny, ...
Applied physics letters 66 (11), 1364-1366, 1995
184 1995 Structural instability of 4H–SiC polytype induced by n -type doping JQ Liu, HJ Chung, T Kuhr, Q Li, M Skowronski
Applied physics letters 80 (12), 2111-2113, 2002
171 2002 The mechanism of micropipe nucleation at inclusions in silicon carbide M Dudley, XR Huang, W Huang, A Powell, S Wang, P Neudeck, ...
Applied physics letters 75 (6), 784-786, 1999
169 1999 GaN (0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations AR Smith, RM Feenstra, DW Greve, MS Shin, M Skowronski, ...
Surface science 423 (1), 70-84, 1999
167 1999 Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy F Hamdani, M Yeadon, DJ Smith, H Tang, W Kim, A Salvador, ...
Journal of applied physics 83 (2), 983-990, 1998
164 1998 Spontaneous formation of stacking faults in highly doped 4H–SiC during annealing TA Kuhr, JQ Liu, HJ Chung, M Skowronski, F Szmulowicz
Journal of applied physics 92 (10), 5863-5871, 2002
160 2002 Native hole trap in bulk GaAs and its association with the double‐charge state of the arsenic antisite defect J Lagowski, DG Lin, TP Chen, M Skowronski, HC Gatos
Applied physics letters 47 (9), 929-931, 1985
140 1985 Mobility of oxygen vacancy in SrTiO3 and its implications for oxygen-migration-based resistance switching W Jiang, M Noman, YM Lu, JA Bain, PA Salvador, M Skowronski
Journal of Applied Physics 110 (3), 2011
132 2011 Properties of Si donors and persistent photoconductivity in AlGaN AY Polyakov, NB Smirnov, AV Govorkov, MG Mil'Vidskii, JM Redwing, ...
Solid-State Electronics 42 (4), 627-635, 1998
132 1998 Recombination-enhanced defect motion in forward-biased 4H–SiC diodes M Skowronski, JQ Liu, WM Vetter, M Dudley, C Hallin, H Lendenmann
Journal of applied physics 92 (8), 4699-4704, 2002
130 2002