| Field Effect Diode (FED): A novel device for ESD protection in deep sub-micron SOI technologies AA Salman, SG Beebe, M Emam, MM Pelella, DE Ioannou 2006 International Electron Devices Meeting, 1-4, 2006 | 84 | 2006 |
| SOI field-effect diode DRAM cell: Design and operation AZ Badwan, Z Chbili, Y Yang, AA Salman, Q Li, DE Ioannou IEEE electron device letters 34 (8), 1002-1004, 2013 | 61 | 2013 |
| The relevance of long-duration TLP stress on system level ESD design G Boselli, A Salman, J Brodsky, H Kunz Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2010, 1-10, 2010 | 37 | 2010 |
| Design and optimization of the SOI field effect diode (FED) for ESD protection Y Yang, AA Salman, DE Ioannou, SG Beebe Solid-state electronics 52 (10), 1482-1485, 2008 | 36 | 2008 |
| Double gate (dg) soi ratioed logic with intrinsically on symmetric dg-mosfet load DE Ioannou, S Mitra, A Salman US Patent 7,180,135, 2007 | 34 | 2007 |
| Design and characterization of ESD protection devices for high-speed I/O in advanced SOI technology S Cao, AA Salman, JH Chun, SG Beebe, MM Pelella, RW Dutton IEEE transactions on electron devices 57 (3), 644-653, 2010 | 33 | 2010 |
| Field effect resistor for ESD protection AA Salman, SG Beebe, S Cao US Patent 8,018,002, 2011 | 30 | 2011 |
| Evaluation of Diode-Based and NMOS/Lnpn-Based ESD Protection Strategies in a Triple Gate Oxide Thickness 0.13 mum CMOS Logic Technology R Gauthier, M Muhammad, C Putnam, W Stadler, K Esmark, P Riess, ... ELECTRICAL OVERSTRESS ELECTROSTATIC DISCHARGE SYMPOSIUM PROCEEDINGS, 205-215, 2001 | 29 | 2001 |
| ESD-induced oxide breakdown on self-protecting GG-nMOSFET in 0.1-/spl mu/m CMOS technology AA Salman, R Gauthier, C Putnam, P Riess, M Muhammad, M Woo, ... IEEE transactions on device and materials reliability 3 (3), 79-84, 2003 | 28 | 2003 |
| Reliability challenges of high performance PD SOI CMOS with ultra-thin gate dielectrics E Zhao, J Zhang, A Salman, N Subba, J Chan, A Marathe, S Beebe, ... Solid-State Electronics 48 (10-11), 1703-1708, 2004 | 26 | 2004 |
| A flexible simulation model for system level ESD stresses with application to ESD design and troubleshooting R Mertens, H Kunz, A Salman, G Boselli, E Rosenbaum Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2012, 1-6, 2012 | 25 | 2012 |
| Overshoot-induced failures in forward-biased diodes: A new challenge to high-speed ESD design F Farbiz, A Appaswamy, AA Salman, G Boselli 2013 IEEE International Reliability Physics Symposium (IRPS), 2B. 1.1-2B. 1.8, 2013 | 24 | 2013 |
| Bidirectional electrostatic discharge (ESD) protection HL Edwards, AA Salman US Patent 8,704,271, 2014 | 23 | 2014 |
| Drain extended mos transistor having selectively silicided drain AA Salman, F Farbiz, AC Appaswamy, JE Kunz, G Boselli US Patent App. 13/441,318, 2013 | 23 | 2013 |
| Mutual ballasting multi-finger bidirectional ESD device AA Salman, F Farbiz, AM Concannon, G Boselli US Patent 9,224,724, 2015 | 22 | 2015 |
| Field effect diode for effective CDM ESD protection in 45 nm SOI technology S Cao, SG Beebe, AA Salman, MM Pelella, JH Chun, RW Dutton 2009 IEEE International Reliability Physics Symposium, 594-601, 2009 | 21 | 2009 |
| Pseudo-nMOS revisited: impact of SOI on low power, high speed circuit design N Subba, A Salman, S Mitra, DE Ioannou, C Tretz 2000 IEEE International SOI Conference. Proceedings (Cat. No. 00CH37125), 26-27, 2000 | 20 | 2000 |
| NMOSFET ESD self-protection strategy and underlying failure mechanism in advanced 0.13-/spl mu/m CMOS technology A Salman, R Gauthier, W Stadler, K Esmark, M Muhammad, C Putnam, ... IEEE transactions on device and materials reliability 2 (1), 2-8, 2002 | 19 | 2002 |
| Mutual ballasting: A novel technique for improved inductive system level IEC ESD stress performance for automotive applications AA Salman, F Farbiz, A Concannon, H Edwards, G Boselli 2013 35th Electrical Overstress/Electrostatic Discharge Symposium, 1-7, 2013 | 18 | 2013 |
| Characterization and investigation of the interaction between hot electron and electrostatic discharge stresses using NMOS devices in 0.13/spl mu/m CMOS technology A Salman, R Gauthier, W Stadler, K Esmark, M Muhammad, C Putnam, ... 2001 IEEE International Reliability Physics Symposium Proceedings. 39th …, 2001 | 18 | 2001 |
Dimitris IoannouProfessor of Electrical Engineering, George Mason UniversityVerified email at gmu.edu
