| 6.0 kV, 100A, 175kHz super cascode power module for medium voltage, high power applications B Gao, AJ Morgan, Y Xu, X Zhao, DC Hopkins 2018 IEEE Applied Power Electronics Conference and Exposition (APEC), 1288-1293, 2018 | 36 | 2018 |
| Decomposition and electro-physical model creation of the CREE 1200V, 50A 3-Ph SiC module AJ Morgan, Y Xu, DC Hopkins, I Husain, W Yu 2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 2141-2146, 2016 | 30 | 2016 |
| Monolithic Integration of Lateral HV Power MOSFET with LV CMOS for SiC Power IC Technology SB Isukapati, H Zhang, T Liu, E Ashik, B Lee, AJ Morgan, W Sung, ... 2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021 | 28 | 2021 |
| New Short Circuit Failure Mechanism for 1.2 kV 4H-SiC MOSFETs and JBSFETs K Han, A Kanale, BJ Baliga, B Ballard, A Morgan, DC Hopkins 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2018 | 27 | 2018 |
| Design methodology for a planarized high power density EV/HEV traction drive using SiC power modules D Rahman, AJ Morgan, Y Xu, R Gao, W Yu, DC Hopkins, I Husain 2016 IEEE Energy Conversion Congress and Exposition (ECCE), 1-7, 2016 | 27 | 2016 |
| 6.5 kv sic jfet-based super cascode power module with high avalanche energy handling capability B Gao, A Morgan, Y Xu, X Zhao, B Ballard, DC Hopkins 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2018 | 20 | 2018 |
| Developing 13-kV 4H-SiC MOSFETs: Significance of Implant Straggle, Channel Design, and MOS Process on Static Performance N Yun, D Kim, J Lynch, AJ Morgan, W Sung, M Kang, A Agarwal, R Green, ... IEEE Transactions on Electron Devices 67 (10), 4346-4353, 2020 | 19 | 2020 |
| An Inclusive Structural Analysis on the Design of 1.2 kV 4H-SiC Planar MOSFETs D Kim, SY Jang, AJ Morgan, W Sung IEEE Journal of the Electron Devices Society 9, 804-812, 2021 | 17 | 2021 |
| Design, Package, and Hardware Verification of a High-Voltage Current Switch A De, AJ Morgan, VM Iyer, H Ke, X Zhao, K Vechalapu, S Bhattacharya, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 6 (1), 441-450, 2017 | 17 | 2017 |
| Non-Isothermal Simulations to Optimize SiC MOSFETs for Enhanced Short-Circuit Ruggedness D Kim, AJ Morgan, N Yun, W Sung, A Agarwal, R Kaplar 2020 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2020 | 14 | 2020 |
| An Optimal Design for 1.2 kV 4H-SiC JBSFET (Junction Barrier Schottky Diode Integrated MOSFET) With Deep P-Well D Kim, SY Jang, S DeBoer, AJ Morgan, W Sung IEEE Electron Device Letters 43 (5), 785-788, 2022 | 12 | 2022 |
| Development of Isolated CMOS and HV MOSFET on an N- epi/P- epi/4H-SiC N+ Substrate for Power IC Applications SB Isukapati, AJ Morgan, W Sung, H Zhang, T Liu, A Fayed, AK Agarwal, ... 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 12 | 2021 |
| Investigation of rapid-prototyping methods for 3D printed power electronic module development H Ke, A Morgan, R Aman, DC Hopkins International Symposium on Microelectronics 2014 (1), 000887-000892, 2014 | 8 | 2014 |
| Development of Nonlinear Resistive Field Grading Materials for Electric Field Mitigation in Power Electronic Modules O Faruqe, F Haque, P Saha, AJ Morgan, W Sung, C Park 2022 IEEE Energy Conversion Congress and Exposition (ECCE), 1-5, 2022 | 6 | 2022 |
| A high performance power module with> 10kV capability to characterize and test in situ SiC devices at> 200 C ambient X Zhao, H Ke, Y Jiang, A Morgan, Y Xu, DC Hopkins Additional Papers and Presentations 2016 (HiTEC), 000149-000158, 2016 | 6 | 2016 |
| The Effect of Deep JFET and P-Well Implant of 1.2 kV 4H-SiC MOSFETs D Kim, N Yun, AJ Morgan, W Sung IEEE Journal of the Electron Devices Society 10, 989-995, 2022 | 5 | 2022 |
| SPICE Modeling and CMOS Circuit Development of a SiC Power IC Technology T Liu, H Zhang, SB Isukapati, E Ashik, AJ Morgan, B Lee, W Sung, ... 2021 IEEE International Midwest Symposium on Circuits and Systems (MWSCAS …, 2021 | 5 | 2021 |
| Design and Characterization of 3.3 kV-15 kV rated DBC Power Modules for Developmental Testing of WBG devices U Mehrotra, AJ Morgan, DC Hopkins 2021 IEEE Applied Power Electronics Conference and Exposition (APEC), 2351-2356, 2021 | 5 | 2021 |
| Channel Design Optimization for 1.2-kV 4H-SiC MOSFET Achieving Inherent Unipolar Diode 3rd Quadrant Operation D Kim, N Yun, SY Jang, AJ Morgan, W Sung IEEE Journal of the Electron Devices Society 10, 495-503, 2022 | 4 | 2022 |
| Edge Termination and Peripheral Designs for SiC High-Voltage (HV) Lateral MOSFETs for Power IC Technology SB Isukapati, AJ Morgan, W Sung 2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022 | 4 | 2022 |
