| Enhanced light output power of green LEDs employing AlGaN interlayer in InGaN/GaN MQW structure on sapphire (0001) substrate T Shioda, H Yoshida, K Tachibana, N Sugiyama, S Nunoue physica status solidi (a) 209 (3), 473-476, 2012 | 88 | 2012 |
| InP–InGaAsP Integrated 15 Optical Switch Using Arrayed Phase Shifters T Tanemura, M Takenaka, A Al Amin, K Takeda, T Shioda, M Sugiyama, ... IEEE Photonics Technology Letters 20 (12), 1063-1065, 2008 | 52 | 2008 |
| Selective area metal–organic vapor phase epitaxy of nitride semiconductors for multicolor emission T Shioda, Y Tomita, M Sugiyama, Y Shimogaki, Y Nakano IEEE Journal of Selected Topics in Quantum Electronics 15 (4), 1053-1065, 2009 | 30 | 2009 |
| Selective area metal-organic vapor-phase epitaxy of InN, GaN and InGaN covering whole composition range T Shioda, M Sugiyama, Y Shimogaki, Y Nakano Journal of crystal growth 311 (10), 2809-2812, 2009 | 27 | 2009 |
| Simulation and design of the emission wavelength of multiple quantum well structures fabricated by selective area metalorganic chemical vapor deposition T Shioda, T Doi, A Al Amin, XL Song, M Sugiyama, Y Shimogaki, ... Thin solid films 498 (1-2), 174-178, 2006 | 27 | 2006 |
| Impact of InGaN growth conditions on structural stability under high temperature process in InGaN/GaN multiple quantum wells T Hikosaka, T Shioda, Y Harada, K Tachibana, N Sugiyama, S Nunoue physica status solidi c 8 (7‐8), 2016-2018, 2011 | 25 | 2011 |
| Abrupt InGaP∕ GaAs heterointerface grown by optimized gas-switching sequence in metal organic vapor phase epitaxy T Nakano, T Shioda, E Abe, M Sugiyama, N Enomoto, Y Nakano, ... Applied Physics Letters 92 (11), 2008 | 23 | 2008 |
| Vapor phase diffusion and surface diffusion combined model for InGaAsP selective area metal–organic vapor phase epitaxy T Shioda, M Sugiyama, Y Shimogaki, Y Nakano Journal of crystal growth 298, 37-40, 2007 | 21 | 2007 |
| Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer T Shioda, H Hung, J Hwang, H Yoshida, N Sugiyama, S Nunoue US Patent 8,785,943, 2014 | 19 | 2014 |
| Semiconductor light emitting device T Shioda, H Yoshida, N Sugiyama, S Nunoue US Patent 8,698,123, 2014 | 18 | 2014 |
| Kinetic Analysis of InN Selective Area Metal–Organic Vapor Phase Epitaxy T Shioda, M Sugiyama, Y Shimogaki, Y Nakano Applied physics express 1 (7), 071102, 2008 | 17 | 2008 |
| Semiconductor light emitting device T Shioda, T Hikosaka, Y Harada, N Sugiyama, S Nunoue US Patent 8,610,106, 2013 | 16 | 2013 |
| Semiconductor light emitting device and method of manufacturing the same T Hikosaka, T Shioda, Y Harada, S Nunoue US Patent 8,399,896, 2013 | 16 | 2013 |
| GaN selective area metal–organic vapor phase epitaxy: Prediction of growth rate enhancement by vapor phase diffusion model T Shioda, Y Tomita, M Sugiyama, Y Shimogaki, Y Nakano Japanese Journal of Applied Physics 46 (11L), L1045, 2007 | 15 | 2007 |
| Semiconductor device T Shioda, J Fujita, T Nishimoto, Y Fukuzumi, A Fukumoto, H Nagano US Patent 10,438,966, 2019 | 13 | 2019 |
| Semiconductor light emitting device, wafer, and method for manufacturing nitride semiconductor crystal layer N Sugiyama, T Sato, H Ono, S Mitsugi, T Shioda, J Hwang, H Hung, ... US Patent 8,952,401, 2015 | 12 | 2015 |
| Semiconductor light emitting device N Sugiyama, T Shioda, H Yoshida, S Nunoue US Patent 9,130,098, 2015 | 11 | 2015 |
| Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layer T Shioda, H Hung, J Hwang, T Sato, N Sugiyama, S Nunoue US Patent 8,525,194, 2013 | 11 | 2013 |
| Semiconductor light emitting device and method for manufacturing same Y Harada, T Hikosaka, T Shioda, K Tachibana, H Nago, S Nunoue US Patent 8,525,197, 2013 | 11 | 2013 |
| Selectivity enhancement by hydrogen addition in selective area metal‐organic vapor phase epitaxy of GaN and InGaN T Shioda, M Sugiyama, Y Shimogaki, Y Nakano physica status solidi (a) 207 (6), 1375-1378, 2010 | 10 | 2010 |
