Simon Ruffell
Simon Ruffell
Applied Materials - Varian Semiconductor Equipment
Verified email at amat.com
Title
Cited by
Cited by
Year
Formation and growth of nanoindentation-induced high pressure phases in crystalline and amorphous silicon
S Ruffell, JE Bradby, JS Williams, P Munroe
Journal of Applied Physics 102 (6), 063521, 2007
732007
Phase transformations induced by spherical indentation in ion-implanted amorphous silicon
B Haberl, JE Bradby, S Ruffell, JS Williams, P Munroe
Journal of applied physics 100 (1), 013520, 2006
712006
An in situ electrical measurement technique via a conducting diamond tip for nanoindentation in silicon
S Ruffell, JE Bradby, JS Williams, OL Warren
Journal of materials research 22 (3), 578-586, 2007
692007
High pressure crystalline phase formation during nanoindentation: amorphous versus crystalline silicon
S Ruffell, JE Bradby, JS Williams
Applied physics letters 89 (9), 091919, 2006
642006
Electron and hole mobility reduction and Hall factor in phosphorus-compensated -type silicon
FE Rougieux, D Macdonald, A Cuevas, S Ruffell, J Schmidt, B Lim, ...
Journal of Applied Physics 108 (1), 013706, 2010
582010
Identification of nanoindentation-induced phase changes in silicon by in situ electrical characterization
S Ruffell, JE Bradby, N Fujisawa, JS Williams
Journal of Applied Physics 101 (8), 083531, 2007
582007
Nanoindentation-induced phase transformations in silicon at elevated temperatures
S Ruffell, JE Bradby, JS Williams, D Munoz-Paniagua, S Tadayyon, ...
Nanotechnology 20 (13), 135603, 2009
532009
Annealing of nanoindentation-induced high pressure crystalline phases created in crystalline and amorphous silicon
S Ruffell, B Haberl, S Koenig, JE Bradby, JS Williams
Journal of Applied Physics 105 (9), 093513, 2009
492009
Structural characterization of pressure-induced amorphous silicon
B Haberl, ACY Liu, JE Bradby, S Ruffell, JS Williams, P Munroe
Physical Review B 79 (15), 155209, 2009
422009
Annealing behavior of low-energy ion-implanted phosphorus in silicon
S Ruffell, IV Mitchell, PJ Simpson
Journal of applied physics 97 (12), 123518, 2005
382005
Nanomechanical properties of sputter-deposited HfO2 and HfxSi1-xO2 thin films
DK Venkatachalam, JE Bradby, MN Saleh, S Ruffell, RG Elliman
Journal of Applied Physics 110 (4), 043527, 2011
372011
Understanding pressure-induced phase-transformation behavior in silicon through in situ electrical probing under cyclic loading conditions
N Fujisawa, S Ruffell, JE Bradby, JS Williams, B Haberl, OL Warren
Journal of Applied Physics 105 (10), 106111, 2009
342009
Nanoindentation-induced phase transformation in crystalline silicon and relaxed amorphous silicon
R Rao, JE Bradby, S Ruffell, JS Williams
Microelectronics journal 38 (6-7), 722-726, 2007
342007
Influence of oxygen on the sputtering of aluminum oxide for the surface passivation of crystalline silicon
TTA Li, S Ruffell, M Tucci, Y Mansouliť, C Samundsett, S De Iullis, ...
Solar energy materials and solar cells 95 (1), 69-72, 2011
332011
Room temperature writing of electrically conductive and insulating zones in silicon by nanoindentation
S Ruffell, K Sears, JE Bradby, JS Williams
Applied Physics Letters 98 (5), 052105, 2011
322011
Experimental evidence for semiconducting behavior of Si-XII
S Ruffell, K Sears, AP Knights, JE Bradby, JS Williams
Physical Review B 83 (7), 075316, 2011
312011
Nanoscale characterization of energy generation from piezoelectric thin films
M Bhaskaran, S Sriram, S Ruffell, A Mitchell
Advanced Functional Materials 21 (12), 2251-2257, 2011
252011
Annealing kinetics of nanoindentation-induced polycrystalline high pressure phases in crystalline silicon
S Ruffell, JE Bradby, JS Williams
Applied physics letters 90 (13), 131901, 2007
232007
Nanoindentation-induced phase transformation in relaxed and unrelaxed ion-implanted amorphous germanium
DJ Oliver, JE Bradby, S Ruffell, JS Williams, P Munroe
Journal of Applied Physics 106 (9), 093509, 2009
222009
Effects of carbon on ion-implantation-induced disorder in GaN
SO Kucheyev, JE Bradby, CP Li, S Ruffell, T van Buuren, TE Felter
Applied Physics Letters 91 (26), 261905, 2007
222007
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Articles 1–20