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Madhushankar B N
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Year
Low Schottky Barrier Black Phosphorus Field‐Effect Devices with Ferromagnetic Tunnel Contacts
MV Kamalakar, BN Madhushankar, A Dankert, SP Dash
Small 11 (18), 2209-2216, 2015
130*2015
Electronic properties of germanane field-effect transistors
BN Madhushankar, A Kaverzin, T Giousis, G Potsi, D Gournis, P Rudolf, ...
2D Materials 4 (2), 021009, 2017
1072017
Large spin-relaxation anisotropy in bilayer-graphene/ heterostructures
S Omar, BN Madhushankar, BJ van Wees
Physical Review B 100 (15), 155415, 2019
192019
Effect of high-k dielectric and ionic liquid gate on nanolayer black-phosphorus field effect transistors
MV Kamalakar, BN Madhushankar, A Dankert, SP Dash
Applied Physics Letters 107 (11), 2015
192015
Water-Gated Phospholipid-Monolayer Organic Field Effect Transistor Through Modified Mueller―Montal Method
KS Narayan, BN Madhushankar, V Gautam, SP Senanayak, R Shivanna
IEEE electron device letters 34 (2), 310-312, 2013
72013
Charge and spin transport in two-dimensional materials and their heterostructures
MB Nandishaiah
2020
Study of proximity induced SOC and spin injection in graphene - multilayer WSe2 Van der Waals structures
M Bettadahalli Nandishaiah, S Omar, B Van Wees
APS March Meeting Abstracts 2018, L21. 004, 2018
2018
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