Dipankar Kalita
Dipankar Kalita
CEA, Grenoble
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Cited by
Strain superlattices and macroscale suspension of Graphene induced by corrugated substrates
A Reserbat-Plantey, D Kalita, Z Han, L Ferlazzo, S Autier-Laurent, ...
Nano letters 14 (9), 5044-5051, 2014
Homogeneous optical and electronic properties of graphene due to the suppression of multilayer patches during CVD on copper foils
Z Han, A Kimouche, D Kalita, A Allain, H Arjmandi‐Tash, ...
Advanced Functional Materials 24 (7), 964-970, 2014
Dry efficient cleaning of poly-methyl-methacrylate residues from graphene with high-density H2 and H2-N2 plasmas
G Cunge, D Ferrah, C Petit-Etienne, A Davydova, H Okuno, D Kalita, ...
Journal of Applied Physics 118 (12), 123302, 2015
Interplay between Raman shift and thermal expansion in graphene: Temperature-dependent measurements and analysis of substrate corrections
S Linas, Y Magnin, B Poinsot, O Boisron, GD Förster, V Martinez, ...
Physical Review B 91 (7), 075426, 2015
Biaxial Strain Transfer in Supported Graphene
C Bousige, F Balima, D Machon, GS Pinheiro, A Torres-Dias, J Nicolle, ...
Nano letters 17 (1), 21-27, 2016
Recording Spikes Activity in Cultured Hippocampal Neurons Using Flexible or Transparent Graphene Transistors
F Veliev, Z Han, D Kalita, A Briançon-Marjollet, V Bouchiat, C Delacour
Frontiers in neuroscience 11, 466, 2017
Strong suppression of internal electric field in GaN/AlGaN multi-layer quantum dots in nanowires
R Songmuang, D Kalita, P Sinha, M Den Hertog, R André, T Ben, ...
Applied Physics Letters 99 (14), 141914, 2011
Deviation from the normal mode expansion in a coupled graphene-nanomechanical system
C Schwarz, B Pigeau, LM de Lépinay, AG Kuhn, D Kalita, N Bendiab, ...
Physical Review Applied 6 (6), 064021, 2016
Physical Review Applied
C Schwarz, B Pigeau, LM de Lépinay, AG Kuhn, D Kalita, N Bendiab, ...
Large scale graphene/h-BN heterostructures obtained by direct CVD growth of graphene using high-yield proximity-catalytic process
H Arjmandi-Tash, D Kalita, Z Han, R Othmen, G Nayak, C Berne, ...
Journal of Physics: Materials 1 (1), 015003, 2018
Sensing ion channel in neuron networks with graphene field effect transistors
F Veliev, A Cresti, D Kalita, A Bourrier, T Belloir, A Briançon-Marjollet, ...
2D Materials 5 (4), 045020, 2018
Self-organized growth of bamboo-like carbon nanotube arrays for field emission properties
B Padya, D Kalita, PK Jain, G Padmanabham, M Ravi, KS Bhat
Applied Nanoscience 2 (3), 253-259, 2012
Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors
M Spies, J Polaczyński, A Ajay, D Kalita, MA Luong, J Lähnemann, ...
Nanotechnology 29 (25), 255204, 2018
Progress on carbon nanotube BEOL interconnects
B Uhlig, J Liang, J Lee, R Ramos, A Dhavamani, N Nagy, J Dijon, ...
Design, Automation & Test in Europe Conference & Exhibition (DATE), 2018 …, 2018
A physics-based investigation of Pt-salt doped carbon nanotubes for local interconnects
J Liang, R Ramos, J Dijon, H Okuno, D Kalita, D Renaud, J Lee, ...
Electron Devices Meeting (IEDM), 2017 IEEE International, 35.5. 1-35.5. 4, 2017
Investigation of Pt-salt-doped-standalone-multiwall carbon nanotubes for on-chip interconnect applications
J Liang, R Chen, R Ramos, J Lee, H Okuno, D Kalita, V Georgiev, ...
IEEE Transactions on Electron Devices 66 (5), 2346-2352, 2019
Variability study of MWCNT local interconnects considering defects and contact resistances—Part I: Pristine MWCNT
R Chen, J Liang, J Lee, VP Georgiev, R Ramos, H Okuno, D Kalita, ...
IEEE Transactions on Electron Devices 65 (11), 4955-4962, 2018
Understanding electromigration in Cu-CNT composite interconnects: A multiscale electrothermal simulation study
J Lee, S Berrada, F Adamu-Lema, N Nagy, VP Georgiev, T Sadi, J Liang, ...
IEEE Transactions on Electron Devices 65 (9), 3884-3892, 2018
Variability study of mwcnt local interconnects considering defects and contact resistances—Part II: Impact of charge transfer doping
R Chen, J Liang, J Lee, VP Georgiev, R Ramos, H Okuno, D Kalita, ...
IEEE Transactions on Electron Devices 65 (11), 4963-4970, 2018
The impact of vacancy defects on CNT interconnects: From statistical atomistic study to circuit simulations
J Lee, S Berrada, J Liang, T Sadi, VP Georgiev, A Todri-Sanial, D Kalita, ...
Simulation of Semiconductor Processes and Devices (SISPAD), 2017 …, 2017
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