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Lin Yang
Lin Yang
Forshungszentrum Juelich
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Title
Cited by
Cited by
Year
The influence of copper top electrodes on the resistive switching effect in TiO2 thin films studied by conductive atomic force microscopy
L Yang, C Kuegeler, K Szot, A Ruediger, R Waser
Applied physics letters 95 (1), 2009
1072009
Self‐organized hexagonal patterns of independent magnetic nanodots
T Bobek, N Mikuszeit, J Camarero, S Kyrsta, L Yang, MA Niño, C Hofer, ...
Advanced materials 19 (24), 4375-4380, 2007
412007
Liquid Injection Atomic Layer Deposition of TiO x Films Using Ti [OCH (CH3) 2] 4
T Watanabe, S Hoffmann-Eifert, L Yang, A Rüdiger, C Kügeler, CS Hwang, ...
Journal of the Electrochemical Society 154 (6), G134, 2007
282007
Resistive switching in TiO2 thin films
L Yang
Forschungszentrum Jülich, 2011
92011
Reason and Role of Atomic Layer Deposition for PCRAM and ReRAM Films
Z, Karim, K. Song, L.Yang, B. Lu
2014 ECS (The Electrochemical Society) and SMEQ Joint International Meeting, 2014
2014
Advances in ALD GST Process and Equipment for sub-20nm PCRAM Devices : Precursor delivery, GST Gapfill and Electrical Characterization
Z. Karim, L.Yang, J. Mack, M.T. Liu, U. Weber, P.K. Baumann, S. Ramanathan ...
Pacific Rim Meeting on Electrochemical and Solid State Science 2012, 2012
2012
Deposition and Electrical Characterization of ALD GexSbyTez for Future Applications
L.Yang, U. Weber, P.K. Baumann, Z. Karim, S. Ramanathan, B. Lu, W. Czubatyj ...
12th International Conference on Atomic Layer Deposition 2012, 2012
2012
Atomic Layer Deposition of smooth phase change GexSbyTez Layers on planar and 3D structures
L.Yang, U. Weber, P.K. Baumann, J. Mack, G. Kim, Z. Karim, S. Ramanathan, B. Lu
11th International Conference on Atomic Layer Deposition 2011, 2011
2011
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