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Norman Sanford
Norman Sanford
Verified email at boulder.nist.gov
Title
Cited by
Cited by
Year
Handbook of Advanced Electronic and Photonic Materials and Devices
V Gopalan, NA Sanford, JA Aust, K Kitamura, Y Furukawa
Ferroelectrics and Dielectrics, 2001
1124*2001
Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy
KA Bertness, A Roshko, LM Mansfield, TE Harvey, NA Sanford
Journal of Crystal Growth 310 (13), 3154-3158, 2008
2082008
Spontaneously grown GaN and AlGaN nanowires
KA Bertness, A Roshko, NA Sanford, JM Barker, AV Davydov
Journal of Crystal Growth 287 (2), 522-527, 2006
1992006
Yb/Er-codoped and Yb-doped waveguide lasers in phosphate glass
DL Veasey, DS Funk, PM Peters, NA Sanford, GE Obarski, N Fontaine, ...
Journal of non-crystalline solids 263, 369-381, 2000
1862000
High-Q GaN nanowire resonators and oscillators
SM Tanner, JM Gray, CT Rogers, KA Bertness, NA Sanford
Applied Physics Letters 91 (20), 2007
1562007
GaN nanowires grown by molecular beam epitaxy
KA Bertness, NA Sanford, AV Davydov
IEEE Journal of selected topics in quantum electronics 17 (4), 847-858, 2010
1552010
Catalyst-free growth of GaN nanowires
KA Bertness, NA Sanford, JM Barker, JB Schlager, A Roshko, ...
Journal of electronic materials 35, 576-580, 2006
1492006
Nucleation conditions for catalyst-free GaN nanowires
KA Bertness, A Roshko, LM Mansfield, TE Harvey, NA Sanford
Journal of crystal growth 300 (1), 94-99, 2007
1472007
Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy
JB Schlager, KA Bertness, PT Blanchard, LH Robins, A Roshko, ...
Journal of applied physics 103 (12), 2008
1452008
Arrays of distributed-Bragg-reflector waveguide lasers at 1536 nm in Yb/Er codoped phosphate glass
DL Veasey, DS Funk, NA Sanford, JS Hayden
Applied Physics Letters 74 (6), 789-791, 1999
1311999
Controlled nucleation of GaN nanowires grown with molecular beam epitaxy
KA Bertness, AW Sanders, DM Rourke, TE Harvey, A Roshko, ...
Advanced functional materials 20 (17), 2911-2915, 2010
1302010
Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy
NA Sanford, PT Blanchard, KA Bertness, L Mansfield, JB Schlager, ...
Journal of Applied Physics 107 (3), 2010
1282010
Refractive index study of films grown on sapphire substrates
NA Sanford, LH Robins, AV Davydov, A Shapiro, DV Tsvetkov, ...
Journal of applied physics 94 (5), 2980-2991, 2003
1232003
Effect of growth orientation and diameter on the elasticity of GaN nanowires. A combined in situ TEM and atomistic modeling investigation
RA Bernal, R Agrawal, B Peng, KA Bertness, NA Sanford, AV Davydov, ...
Nano letters 11 (2), 548-555, 2011
1082011
Highly selective GaN-nanowire/TiO2-nanocluster hybrid sensors for detection of benzene and related environment pollutants
GS Aluri, A Motayed, AV Davydov, VP Oleshko, KA Bertness, NA Sanford, ...
Nanotechnology 22 (29), 295503, 2011
1032011
Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy
MD Brubaker, I Levin, AV Davydov, DM Rourke, NA Sanford, VM Bright, ...
Journal of Applied Physics 110 (5), 2011
1022011
Z‐propagating waveguide lasers in rare‐earth‐doped Ti:LiNbO3
J Amin, JA Aust, NA Sanford
Applied physics letters 69 (25), 3785-3787, 1996
1021996
On-chip optical interconnects made with gallium nitride nanowires
MD Brubaker, PT Blanchard, JB Schlager, AW Sanders, A Roshko, ...
Nano letters 13 (2), 374-377, 2013
982013
Optical waveguides in LiTaO3 formed by proton exchange
WB Spillman, NA Sanford, RA Soref
Optics letters 8 (9), 497-498, 1983
921983
Optimization of the Čerenkov sum‐frequency generation in proton‐exchanged Mg:LiNbO3 channel waveguides
NA Sanford, JM Connors
Journal of applied physics 65 (4), 1429-1437, 1989
901989
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