| Theory of optical processes in semiconductors: bulk and microstructures PK Basu Clarendon press, 1997 | 564 | 1997 |
| Empirical expressions for the alloy composition and temperature dependence of the band gap and intrinsic carrier density in GaxIn1−xAs S Paul, JB Roy, PK Basu Journal of applied physics 69 (2), 827-829, 1991 | 273 | 1991 |
| Silicon photonics: fundamentals and devices MJ Deen, PK Basu John Wiley & Sons, 2012 | 209 | 2012 |
| Design and modeling of GeSn-based heterojunction phototransistors for communication applications GE Chang, R Basu, B Mukhopadhyay, PK Basu IEEE Journal of Selected Topics in Quantum Electronics 22 (6), 425-433, 2016 | 82 | 2016 |
| Estimation of alloy scattering potential in ternaries from the study of two‐dimensional electron transport PK Basu, BR Nag Applied physics letters 43 (7), 689-691, 1983 | 73 | 1983 |
| Lattice scattering mobility of a two-dimensional electron gas in GaAs PK Basu, BR Nag Physical Review B 22 (10), 4849, 1980 | 57 | 1980 |
| Calculation of the mobility of two-dimensional excitons in a GaAs/Al x Ga 1− x As quantum well PK Basu, P Ray Physical Review B 44 (4), 1844, 1991 | 52 | 1991 |
| Generalized Einstein relation for the diffusivity‐mobility ratio in multi‐band degenerate semiconductors BR Nag, AN Chakravarti, PK Basu physica status solidi (a) 68 (1), K75-K80, 1981 | 46 | 1981 |
| Piezoelectric scattering in quantised surface layers in semiconductors PK Basu, BR Nag Journal of Physics C: Solid State Physics 14 (10), 1519, 1981 | 43 | 1981 |
| Predicted performance of Ge/GeSn hetero-phototransistors on Si substrate at R Basu, V Chakraborty, B Mukhopadhyay, PK Basu Optical and Quantum Electronics 47, 387-399, 2015 | 40 | 2015 |
| Semiconductor laser theory PK Basu, B Mukhopadhyay, R Basu CRC Press, 2015 | 38 | 2015 |
| Prediction of Large Enhancement of Electron Mobility in Direct Gap Ge1−xSnx Alloy B Mukhopadhyay, G Sen, R Basu, S Mukhopadhyay, PK Basu physica status solidi (b) 254 (11), 1700244, 2017 | 34 | 2017 |
| Energy relaxation of hot two-dimensional excitons in a GaAs quantum well by exciton-phonon interaction PK Basu, P Ray Physical Review B 45 (4), 1907, 1992 | 31 | 1992 |
| Reduced intervalley scattering rates in strained Si/SixGe1−x quantum wells and enhancement of electron mobility: A model calculation PK Basu, SK Paul Journal of applied physics 71 (7), 3617-3619, 1992 | 28 | 1992 |
| Monte Carlo calculation of hot electron drift velocity in silicon (100)-inversion layer by including three subbands PK Basu Solid State Communications 27 (6), 657-660, 1978 | 27 | 1978 |
| High‐field drift velocity of silicon inversion layers—a Monte Carlo calculation PK Basu Journal of Applied Physics 48 (1), 350-353, 1977 | 27 | 1977 |
| Modelling of threshold voltage and subthreshold slope of strained-Si MOSFETs including quantum effects B Mukhopadhyay, A Biswas, PK Basu, G Eneman, P Verheyen, E Simoen, ... Semiconductor science and technology 23 (9), 095017, 2008 | 26 | 2008 |
| Estimated threshold base current and light power output of a transistor laser with InGaAs quantum well in GaAs base R Basu, B Mukhopadhyay, PK Basu Semiconductor science and technology 26 (10), 105014, 2011 | 25 | 2011 |
| Alloy scattering limited mobility of two-dimensional electron gas formed in In0. 53Ga0. 47As PK Basu, BR Nag Surface Science 142 (1-3), 256-259, 1984 | 25 | 1984 |
| Modeling resonance-free modulation response in transistor lasers with single and multiple quantum wells in the base R Basu, B Mukhopadhyay, PK Basu IEEE Photonics Journal 4 (5), 1572-1581, 2012 | 24 | 2012 |
Rikmantra BasuAssistant Proffessor of Electronics and Communication Engineering, National Institute of TechnologyVerified email at nitdelhi.ac.in
