Παρακολούθηση
Andrea Fantini
Andrea Fantini
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα imec.be
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Παρατίθεται από
Παρατίθεται από
Έτος
10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011
8972011
A bipolar-selected phase change memory featuring multi-level cell storage
F Bedeschi, R Fackenthal, C Resta, EM Donze, M Jagasivamani, ...
IEEE Journal of Solid-State Circuits 44 (1), 217-227, 2008
3962008
Endurance/Retention Trade-off onCap 1T1R Bipolar RRAM
YY Chen, L Goux, S Clima, B Govoreanu, R Degraeve, GS Kar, A Fantini, ...
IEEE Transactions on electron devices 60 (3), 1114-1121, 2013
2772013
Intrinsic switching variability in HfO2RRAM
A Fantini, L Goux, R Degraeve, DJ Wouters, N Raghavan, G Kar, ...
2013 5th IEEE International Memory Workshop, 30-33, 2013
2462013
Balancing SET/RESET Pulse forEndurance in1T1R Bipolar RRAM
YY Chen, B Govoreanu, L Goux, R Degraeve, A Fantini, GS Kar, ...
IEEE Transactions on Electron devices 59 (12), 3243-3249, 2012
2102012
Imaging the three-dimensional conductive channel in filamentary-based oxide resistive switching memory
U Celano, L Goux, R Degraeve, A Fantini, O Richard, H Bender, ...
Nano letters 15 (12), 7970-7975, 2015
1912015
A multi-level-cell bipolar-selected phase-change memory
F Bedeschi, R Fackenthal, C Resta, EM Donze, M Jagasivamani, E Buda, ...
2008 IEEE International Solid-State Circuits Conference-Digest of Technical …, 2008
1662008
Electrical behavior of phase-change memory cells based on GeTe
L Perniola, V Sousa, A Fantini, E Arbaoui, A Bastard, M Armand, ...
IEEE Electron Device Letters 31 (5), 488-490, 2010
1612010
Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current
YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ...
2013 IEEE International Electron Devices Meeting, 10.1. 1-10.1. 4, 2013
1392013
Dynamic ‘hour glass’ model for SET and RESET in HfO2RRAM
R Degraeve, A Fantini, S Clima, B Govoreanu, L Goux, YY Chen, ...
2012 Symposium on VLSI Technology (VLSIT), 75-76, 2012
1182012
International Electron Devices Meeting
B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
Washington DC 31 (1), 2011
1162011
Causes and consequences of the stochastic aspect of filamentary RRAM
R Degraeve, A Fantini, N Raghavan, L Goux, S Clima, B Govoreanu, ...
Microelectronic Engineering 147, 171-175, 2015
1122015
Understanding of the endurance failure in scaled HfO2-based 1T1R RRAM through vacancy mobility degradation
YY Chen, R Degraeve, S Clima, B Govoreanu, L Goux, A Fantini, GS Kar, ...
2012 International Electron Devices Meeting, 20.3. 1-20.3. 4, 2012
1102012
Carbon-doped GeTe: a promising material for phase-change memories
GB Beneventi, L Perniola, V Sousa, E Gourvest, S Maitrejean, JC Bastien, ...
Solid-State Electronics 65, 197-204, 2011
972011
Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering
L Goux, A Fantini, G Kar, YY Chen, N Jossart, R Degraeve, S Clima, ...
2012 Symposium on VLSI Technology (VLSIT), 159-160, 2012
902012
Intrinsic switching behavior in HfO2 RRAM by fast electrical measurements on novel 2R test structures
A Fantini, DJ Wouters, R Degraeve, L Goux, L Pantisano, G Kar, YY Chen, ...
2012 4th IEEE International Memory Workshop, 1-4, 2012
882012
A Thermally Stable and High-Performance 90-nm-Based 1T1R CBRAM Cell
A Belmonte, W Kim, BT Chan, N Heylen, A Fantini, M Houssa, M Jurczak, ...
IEEE transactions on electron devices 60 (11), 3690-3695, 2013
872013
Intrinsic program instability in HfO2 RRAM and consequences on program algorithms
A Fantini, G Gorine, R Degraeve, L Goux, CY Chen, A Redolfi, S Clima, ...
2015 IEEE International Electron Devices Meeting (IEDM), 7.5. 1-7.5. 4, 2015
822015
Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability
N Raghavan, R Degraeve, A Fantini, L Goux, S Strangio, B Govoreanu, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 5E. 3.1-5E. 3.7, 2013
792013
Analysis of complementary RRAM switching
DJ Wouters, L Zhang, A Fantini, R Degraeve, L Goux, YY Chen, ...
IEEE electron device letters 33 (8), 1186-1188, 2012
772012
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