Yaser M. Haddara
Yaser M. Haddara
Verified email at mcmaster.ca
Title
Cited by
Cited by
Year
Accurate measurements of the intrinsic diffusivities of boron and phosphorus in silicon
YM Haddara, BT Folmer, ME Law, T Buyuklimanli
Applied Physics Letters 77 (13), 1976-1978, 2000
1072000
Polymer integration for packaging of implantable sensors
Y Qin, MMR Howlader, MJ Deen, YM Haddara, PR Selvaganapathy
Sensors and Actuators B: Chemical 202, 758-778, 2014
972014
Electrical characterization of polymer-based FETs fabricated by spin-coating poly (3-alkylthiophene) s
MJ Deen, MH Kazemeini, YM Haddara, J Yu, G Vamvounis, S Holdcroft, ...
IEEE Transactions on electron devices 51 (11), 1892-1901, 2004
682004
Dependence of InGaP nanowire morphology and structure on molecular beam epitaxy growth conditions
A Fakhr, YM Haddara, RR LaPierre
Nanotechnology 21 (16), 165601, 2010
492010
A kinetic model for the oxidation of silicon germanium alloys
MA Rabie, YM Haddara, J Carette
Journal of applied physics 98 (7), 074904, 2005
472005
Diffusion of Ge in single quantum wells in inert and oxidizing ambients
M Griglione, TJ Anderson, YM Haddara, ME Law, KS Jones, ...
Journal of Applied Physics 88 (3), 1366-1372, 2000
452000
A low-power CMOS class-E power amplifier for biotelemetry applications
MM El-Desouki, MJ Deen, YM Haddara
2005 European Microwave Conference 1, 4 pp., 2005
292005
Effect of the silicon/oxide interface on interstitials: Di-interstitial recombination
ME Law, YM Haddara, KS Jones
Journal of applied physics 84 (7), 3555-3560, 1998
231998
The impact of on-chip interconnections on CMOS RF integrated circuits
MM El-Desouki, SM Abdelsayed, MJ Deen, NK Nikolova, YM Haddara
IEEE transactions on electron devices 56 (9), 1882-1890, 2009
192009
A fully integrated CMOS power amplifier using superharmonic injection-locking for short-range applications
MM El-Desouki, MJ Deen, YM Haddara, O Marinov
IEEE Sensors Journal 11 (9), 2149-2158, 2011
162011
Modeling silicon–germanium interdiffusion by the vacancy exchange and interstitial mechanisms
M Hasanuzzaman, YM Haddara
Journal of Materials Science: Materials in Electronics 19 (6), 569-576, 2008
132008
Modeling the suppression of boron diffusion in due to carbon incorporation
S Rizk, YM Haddara, A Sibaja-Hernandez
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006
132006
Modeling germanium diffusion in superlattice structures
M Hasanuzzaman, YM Haddara, AP Knights
Journal of Applied Physics 105 (4), 043504, 2009
122009
Effect of encapsulant material on the diffusion of beryllium in molecular beam epitaxy gallium arsenide
YM Haddara, MD Deal, JC Bravman
Applied physics letters 68 (14), 1939-1941, 1996
121996
Impact of growth conditions on vacancy-type defects in silicon–germanium structures grown by molecular-beam epitaxy
KM Shoukri, YM Haddara, AP Knights, PG Coleman
Applied Physics Letters 86 (13), 131923, 2005
92005
Integration of heterogeneous materials for wearable sensors
YM Haddara, MMR Howlader
Polymers 10 (1), 60, 2018
72018
Silicon-Germanium: Properties, Growth and Applications
YM Haddara, P Ashburn, DM Bagnall
Springer Handbook of Electronic and Photonic Materials, 1-1, 2017
72017
A mathematical model for void evolution in silicon by helium implantation and subsequent annealing process
M Hasanuzzaman, YM Haddara, AP Knights
Journal of Applied Physics 112 (6), 064302, 2012
72012
Transient diffusion of beryllium and silicon in gallium arsenide
YM Haddara, JC Bravman
Annual review of materials science 28 (1), 185-214, 1998
71998
Modelling of InGaP nanowires morphology and composition on molecular beam epitaxy growth conditions
A Fakhr, YM Haddara
Journal of Applied Physics 116 (2), 024314, 2014
62014
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Articles 1–20