| Nuclear magnetic resonance linewidth and spin diffusion in isotopically controlled silicon H Hayashi, KM Itoh, LS Vlasenko Physical Review B 78 (15), 153201, 2008 | 49 | 2008 |
| Dynamic nuclear polarization of nuclei in isotopically controlled phosphorus doped silicon H Hayashi, T Itahashi, KM Itoh, LS Vlasenko, MP Vlasenko Physical Review B 80 (4), 045201, 2009 | 42 | 2009 |
| Thin film transistor substrate, method for manufacturing thin film transistor substrate, and display panel H Hayashi US Patent 10,269,832, 2019 | 17 | 2019 |
| Dynamic nuclear polarization of 29Si nuclei in the isotope enriched n‐type silicon H Hayashi, W Ko, T Itahashi, A Sagara, KM Itoh, LS Vlasenko, ... physica status solidi c 3 (12), 4388-4391, 2006 | 16 | 2006 |
| Thin-film semiconductor device including a multi-layer channel layer, and method of manufacturing the same H Hayashi, T Kawashima, G Kawachi US Patent 9,000,437, 2015 | 12 | 2015 |
| Thin-film transistor device and method for manufacturing thin-film transistor device A Kanegae, T Kawashima, H Hayashi, G Kawachi US Patent 8,841,673, 2014 | 12 | 2014 |
| Electron paramagnetic resonance and dynamic nuclear polarization via the photoexcited triplet states of radiation defects in natural and 29Si isotope enriched silicon LS Vlasenko, MP Vlasenko, DS Poloskin, R Laiho, H Hayashi, T Itahashi, ... physica status solidi c 3 (12), 4376-4379, 2006 | 10 | 2006 |
| Thin-film semiconductor device and method of manufacturing the same H Hayashi, T Kawashima, G Kawashi US Patent 8,912,054, 2014 | 9 | 2014 |
| Thin-film transistor, method for fabricating thin-film transistor, and display device H Hayashi, T Kawashima, G Kawachi US Patent App. 13/772,723, 2013 | 9 | 2013 |
| Thin-film semiconductor device for display apparatus thereof and manufacturing method thereof H Hayashi, T Kawashima, G Kawachi US Patent 8,330,166, 2012 | 9 | 2012 |
| AlO sputtered self‐aligned source/drain formation technology for highly reliable oxide thin film transistor backplane H Hayashi, A Murai, M Miura, T Imada, Y Terai, Y Oshima, T Saitoh, ... Journal of the Society for Information Display 26 (10), 583-594, 2018 | 8 | 2018 |
| Optical and dynamic nuclear polarization of Si nuclei via photoexcited triplet states of oxygen-vacancy complexes in isotopically controlled silicon T Itahashi, H Hayashi, MR Rahman, KM Itoh, LS Vlasenko, MP Vlasenko, ... Physical Review B 87 (7), 075201, 2013 | 8 | 2013 |
| P‐12: Self‐Aligned Bottom Gate LTPS Backplanes without Ion‐Implantation Process A Kanegae, H Hayashi, K Nishida, T Saitoh, K Komori SID Symposium Digest of Technical Papers 43 (1), 1090-1093, 2012 | 8 | 2012 |
| Display device and method for driving display device H Hayashi, S Ono US Patent 10,699,634, 2020 | 6 | 2020 |
| Thin film transistor element, production method for same, and display device H Hayashi, Y Nakazaki, Y Kishida US Patent App. 14/895,545, 2016 | 6 | 2016 |
| 58.3: Invited Paper: Highly Reliable InGaZnO Thin Film Transistor Backplane for 55‐inch 4K2K Organic Light‐Emitting Diode Display H Hayashi, Y Nakazaki, T Izumi, A Sasaki, T Nakamura, E Takeda, ... SID symposium digest of technical papers 45 (1), 853-856, 2014 | 6 | 2014 |
| Thin-film transistor substrate T Yoshitani, H Hayashi, R Koshiishi US Patent 10,249,761, 2019 | 5 | 2019 |
| Display device and method for correcting signal voltage using determined threshold voltage shift H Hayashi, T Kawashima US Patent 9,805,660, 2017 | 4 | 2017 |
| Thin-film transistor device and method for manufacturing thin-film transistor device Y Kishida, H Hayashi, T Kawashima, K Nishida US Patent App. 13/632,607, 2013 | 4 | 2013 |
| 23‐4: Channel‐Dimension‐Scalable Oxide Thin‐Film Transistor for High‐Resolution Pixel and Integrated Gate Driver H Hayashi, T Yamada, R Koshiishi, M Miura, Y Terai, Y Oshima, T Saitoh, ... SID Symposium Digest of Technical Papers 50 (1), 322-325, 2019 | 3 | 2019 |
Kohei M. ItohKeio UniversityVerified email at appi.keio.ac.jp
