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| D. McDaniel, WCH Joiner and J. Oostens, and W. Huff C Blue, K Elgaid, I Zitkovsky, P Boolchand Phys. Rev. B 37, 5905, 1988 | 86 | 1988 |
| 50-nm T-gate metamorphic GaAs HEMTs with f/sub T/of 440 GHz and noise figure of 0.7 dB at 26 GHz K Elgaid, H McLelland, M Holland, DAJ Moran, CR Stanley, IG Thayne IEEE Electron Device Letters 26 (11), 784-786, 2005 | 81 | 2005 |
| Scaling of pseudomorphic high electron mobility transistors to decanano dimensions K Kalna, S Roy, A Asenov, K Elgaid, I Thayne Solid-State Electronics 46 (5), 631-638, 2002 | 74 | 2002 |
| Low-hydrogen-content silicon nitride deposited at room temperature by inductively coupled plasma deposition H Zhou, K Elgaid, C Wilkinson, I Thayne Japanese journal of applied physics 45 (10S), 8388, 2006 | 52 | 2006 |
| Metallic doping sites in P Boolchand, C Blue, K Elgaid, I Zitkovsky, D McDaniel, W Huff, ... Physical Review B 38 (16), 11313, 1988 | 45 | 1988 |
| 50-nm self-aligned and “standard” T-gate InP pHEMT comparison: the influence of parasitics on performance at the 50-nm node DAJ Moran, H McLelland, K Elgaid, G Whyte, CR Stanley, I Thayne IEEE Transactions on Electron Devices 53 (12), 2920-2925, 2006 | 37 | 2006 |
| Buffer-induced current collapse in GaN HEMTs on highly resistive Si substrates H Chandrasekar, MJ Uren, A Eblabla, H Hirshy, MA Casbon, PJ Tasker, ... IEEE Electron Device Letters 39 (10), 1556-1559, 2018 | 35 | 2018 |
| High Performance GaN High Electron Mobility Transistors on Low Resistivity Silicon for -Band Applications A Eblabla, X Li, I Thayne, DJ Wallis, I Guiney, K Elgaid IEEE Electron Device Letters 36 (9), 899-901, 2015 | 32 | 2015 |
| 40 to 90 GHz impedance-transforming CPW Marchand balun KS Ang, ID Robertson, K Elgaid, IG Thayne 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No. 00CH37017 …, 2000 | 31 | 2000 |
| Quantifying temperature-dependent substrate loss in GaN-on-Si RF technology H Chandrasekar, MJ Uren, MA Casbon, H Hirshy, A Eblabla, K Elgaid, ... IEEE Transactions on Electron Devices 66 (4), 1681-1687, 2019 | 29 | 2019 |
| Optimization of ohmic contact for AlGaN/GaN HEMT on low-resistivity silicon B Benakaprasad, AM Eblabla, X Li, KG Crawford, K Elgaid IEEE Transactions on Electron Devices 67 (3), 863-868, 2020 | 24 | 2020 |
| GaN on low-resistivity silicon THz high-Q passive device technology AM Eblabla, X Li, DJ Wallis, I Guiney, K Elgaid IEEE Transactions on Terahertz Science and Technology 7 (1), 93-97, 2016 | 24 | 2016 |
| GaN-on-diamond technology platform: Bonding-free membrane manufacturing process MD Smith, JA Cuenca, DE Field, Y Fu, C Yuan, F Massabuau, S Mandal, ... AIP Advances 10 (3), 2020 | 23 | 2020 |
| Design and characterization of elevated CPW and thin film microstrip structures for millimeter-wave applications K Hettak, MG Stubbs, K Elgaid, G Thayne 2005 European Microwave Conference 2, 4 pp.-884, 2005 | 23 | 2005 |
| Origin (s) of anomalous substrate conduction in MOVPE-Grown GaN HEMTs on highly resistive silicon S Ghosh, A Hinz, SM Fairclough, BF Spiridon, A Eblabla, MA Casbon, ... ACS Applied Electronic Materials 3 (2), 813-824, 2021 | 22 | 2021 |
| An approximate analytical model for the quasi-static parameters of elevated CPW lines I McGregor, F Aghamoradi, K Elgaid IEEE transactions on microwave theory and techniques 58 (12), 3809-3814, 2010 | 20 | 2010 |
| Coplanar waveguide transmission lines and high Q inductors on CMOS grade silicon using photoresist and polyimide G Ternent, S Ferguson, Z Borsosfoldi, K Elgaid, T Lohdi, D Edgar, ... Electronics Letters 35 (22), 1957-1958, 1999 | 20 | 1999 |
| Recent development and futuristic applications of MEMS based piezoelectric microphones A Kumar, A Varghese, A Sharma, M Prasad, V Janyani, RP Yadav, ... Sensors and Actuators A: Physical 347, 113887, 2022 | 19 | 2022 |
| Novel shielded coplanar waveguides on GaN-on-low resistivity Si substrates for MMIC applications A Eblabla, DJ Wallis, I Guiney, K Elgaid IEEE microwave and wireless components letters 25 (7), 427-429, 2015 | 18 | 2015 |
