| Lattice parameters of gallium nitride M Leszczynski, H Teisseyre, T Suski, I Grzegory, M Bockowski, J Jun, ... Applied Physics Letters 69 (1), 73-75, 1996 | 549 | 1996 |
| Mechanism of yellow luminescence in GaN T Suski, P Perlin, H Teisseyre, M Leszczyński, I Grzegory, J Jun, ... Applied physics letters 67 (15), 2188-2190, 1995 | 282 | 1995 |
| Thermal conductivity of GaN crystals in 4.2–300 K range A Jeżowski, BA Danilchenko, M Boćkowski, I Grzegory, S Krukowski, ... Solid state communications 128 (2-3), 69-73, 2003 | 217 | 2003 |
| III–V Nitrides—thermodynamics and crystal growth at high N2 pressure I Grzegory, J Jun, M Boćkowski, M Wroblewski, B Łucznik, S Porowski Journal of Physics and Chemistry of Solids 56 (3-4), 639-647, 1995 | 184 | 1995 |
| Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates K Pakuła, A Wysmołek, KP Korona, JM Baranowski, R Stępniewski, ... Solid state communications 97 (11), 919-922, 1996 | 169 | 1996 |
| Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds M Bockowski, M Iwinska, M Amilusik, M Fijalkowski, B Lucznik, T Sochacki Semiconductor Science and Technology 31 (9), 093002, 2016 | 164 | 2016 |
| Technology of gallium nitride crystal growth D Ehrentraut, E Meissner, M Bockowski Springer Science & Business Media, 2010 | 151 | 2010 |
| Thermal properties of indium nitride S Krukowski, A Witek, J Adamczyk, J Jun, M Bockowski, I Grzegory, ... Journal of Physics and Chemistry of Solids 59 (3), 289-295, 1998 | 144 | 1998 |
| Discovery of ultra-crack-resistant oxide glasses with adaptive networks K Januchta, RE Youngman, A Goel, M Bauchy, SL Logunov, SJ Rzoska, ... Chemistry of Materials 29 (14), 5865-5876, 2017 | 135 | 2017 |
| Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing H Sakurai, M Omori, S Yamada, Y Furukawa, H Suzuki, T Narita, ... Applied Physics Letters 115 (14), 2019 | 131 | 2019 |
| Identification of the prime optical center in GaN: Eu 3+ IS Roqan, KP O'Donnell, RW Martin, PR Edwards, SF Song, A Vantomme, ... Physical Review B 81 (8), 085209, 2010 | 117 | 2010 |
| Optical and magnetic properties of Mn in bulk GaN A Wolos, M Palczewska, M Zajac, J Gosk, M Kaminska, A Twardowski, ... Physical Review B 69 (11), 115210, 2004 | 117 | 2004 |
| Structure and mechanical properties of compressed sodium aluminosilicate glasses: Role of non-bridging oxygens TK Bechgaard, A Goel, RE Youngman, JC Mauro, SJ Rzoska, ... Journal of Non-Crystalline Solids 441, 49-57, 2016 | 115 | 2016 |
| Structural characterization of bulk GaN crystals grown under high hydrostatic pressure Z Liliental-Weber, C Kisielowski, S Ruvimov, Y Chen, J Washburn, ... Journal of electronic materials 25, 1545-1550, 1996 | 110 | 1996 |
| Lattice constants, thermal expansion and compressibility of gallium nitride M Leszczynski, T Suski, P Perlin, H Teisseyre, I Grzegory, M Bockowski, ... Journal of Physics D: Applied Physics 28 (4A), A149, 1995 | 108 | 1995 |
| Growth of bulk GaN crystals R Kucharski, T Sochacki, B Lucznik, M Bockowski Journal of Applied Physics 128 (5), 2020 | 100 | 2020 |
| Basic ammonothermal growth of Gallium Nitride–State of the art, challenges, perspectives M Zajac, R Kucharski, K Grabianska, A Gwardys-Bak, A Puchalski, ... Progress in Crystal Growth and Characterization of Materials 64 (3), 63-74, 2018 | 97 | 2018 |
| Deposition of thick GaN layers by HVPE on the pressure grown GaN substrates B Łucznik, B Pastuszka, I Grzegory, M Boćkowski, G Kamler, ... Journal of crystal growth 281 (1), 38-46, 2005 | 97 | 2005 |
| High mobility two-dimensional electron gas in AlGaN∕ GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy C Skierbiszewski, K Dybko, W Knap, M Siekacz, W Krupczyński, G Nowak, ... Applied Physics Letters 86 (10), 2005 | 97 | 2005 |
| Method of fabrication of highly resistive GaN bulk crystals S Porowski, M Bockowski, I Grzegory, S Krukowski, M Leszczynski, ... US Patent 6,273,948, 2001 | 87 | 2001 |
