| Binary semiconductor In2Te3 for the application of phase-change memory device H Zhu, K Chen, Z Ge, H Xu, Y Su, J Yin, Y Xia, Z Liu Journal of materials science 45, 3569-3574, 2010 | 17 | 2010 |
| Enhanced omni-directional performance of copper zinc tin sulfide thin film solar cell by gradient index coating Z Ge, P Rajbhandari, J Hu, A Emrani, TP Dhakal, C Westgate, D Klotzkin Applied Physics Letters 104 (10), 2014 | 15 | 2014 |
| Enhanced forward emission of YAG:Ce3+ phosphor with polystyrene nanosphere coating Z Ge, A Piquette, KC Mishra, D Klotzkin Applied Optics 54 (19), 6025-6028, 2015 | 9 | 2015 |
| Emission enhancements in phosphor chips with surface gratings Z Ge, D Klotzkin Journal of Luminescence 181, 184-188, 2017 | 5 | 2017 |
| Thermal conductivity of 1.3 μm InAs/GaAs quantum dot laser active material from chirp and 3ω measurements Z Ge, P Moat, J Xie, J Hu, JS Huang, X Sun, N Li, BE White, D Klotzkin Applied Physics Letters 100 (8), 2012 | 5 | 2012 |
| A Charge-Trap Memory Device with a Composition-Modulated Zr-Silicate High-k Dielectric Multilayer Structure L Shi-Cheng, G Zhong-Yang, Z Yue, X Bo, G Li-Gang, Y Jiang, X Yi-Dong, ... Chinese Physics Letters 27 (6), 068502, 2010 | 3 | 2010 |
| Design and fabrication of a combined three‐layer coating including gradient refractive index films for broadband antireflection on silicon J Hu, Z Ge, A Piquette, K Mishra, D Klotzkin Microwave and Optical Technology Letters 56 (1), 256-259, 2014 | 2 | 2014 |
| UV EMISSION OF TETRAGONAL ZrO2 NANOCRYSTALS EMBEDDED IN ZrSiO4 AMORPHOUS MATRIX Z Ge, Y Zhou, J Yin, Y Gong, S Lv, Y Xia, Z Liu Modern Physics Letters B 24 (24), 2477-2483, 2010 | 1 | 2010 |
