Electron transport at metal-semiconductor interfaces: General theory RT Tung
Physical Review B 45 (23), 13509, 1992
1776 1992 Recent advances in Schottky barrier concepts RT Tung
Materials Science and Engineering: R: Reports 35 (1-3), 1-138, 2001
1446 2001 The physics and chemistry of the Schottky barrier height RT Tung
Applied Physics Reviews 1 (1), 2014
1302 2014 Electron transport of inhomogeneous Schottky barriers: A numerical study JP Sullivan, RT Tung, MR Pinto, WR Graham
Journal of applied physics 70 (12), 7403-7424, 1991
882 1991 Schottky-barrier formation at single-crystal metal-semiconductor interfaces RT Tung
Physical review letters 52 (6), 461, 1984
541 1984 Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-Ni Epitaxial Structures RT Tung, JM Gibson, JM Poate
Physical review letters 50 (6), 429, 1983
517 1983 Chemical bonding and Fermi level pinning at metal-semiconductor interfaces RT Tung
Physical review letters 84 (26), 6078, 2000
474 2000 Electron transport of inhomogeneous Schottky barriers RT Tung
Applied physics letters 58 (24), 2821-2823, 1991
437 1991 Formation of an electric dipole at metal-semiconductor interfaces RT Tung
Physical review B 64 (20), 205310, 2001
369 2001 Origin of the excess capacitance at intimate Schottky contacts J Werner, AFJ Levi, RT Tung, M Anzlowar, M Pinto
Physical review letters 60 (1), 53, 1988
282 1988 Electrostatic Properties of Ideal and Non‐ideal Polar Organic Monolayers: Implications for Electronic Devices A Natan, L Kronik, H Haick, RT Tung
Advanced Materials 19 (23), 4103-4117, 2007
265 2007 Electron trapping, storing, and emission in nanocrystalline Si dots by capacitance–voltage and conductance–voltage measurements S Huang, S Banerjee, RT Tung, S Oda
Journal of applied physics 93 (1), 576-581, 2003
264 2003 Schottky-barrier inhomogeneity at epitaxial interfaces on Si(100) RT Tung, AFJ Levi, JP Sullivan, F Schrey
Physical review letters 66 (1), 72, 1991
259 1991 Epitaxial silicides RT Tung, JM Poate, JC Bean, JM Gibson, DC Jacobson
Thin Solid Films 93 (1-2), 77-90, 1982
259 1982 Growth of single‐crystal CoSi2 on Si(111) RT Tung, JC Bean, JM Gibson, JM Poate, DC Jacobson
Applied Physics Letters 40 (8), 684-686, 1982
240 1982 Transistor action in Si/CoSi2/Si heterostructures JC Hensel, AFJ Levi, RT Tung, JM Gibson
Applied physics letters 47 (2), 151-153, 1985
239 1985 Oxide mediated epitaxy of CoSi2 on silicon RT Tung
Applied Physics Letters 68 (24), 3461-3463, 1996
233 1996 Growth of single crystal epitaxial silicides on silicon by the use of template layers RT Tung, JM Gibson, JM Poate
Applied physics letters 42 (10), 888-890, 1983
185 1983 Single atom self-diffusion on nickel surfaces RT Tung, WR Graham
Surface Science 97 (1), 73-87, 1980
185 1980 Control of a natural permeable CoSi2 base transistor RT Tung, AFJ Levi, JM Gibson
Applied physics letters 48 (10), 635-637, 1986
176 1986