| Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene J Kim, C Bayram, H Park, CW Cheng, C Dimitrakopoulos, JA Ott, ... Nature communications 5 (1), 4836, 2014 | 403 | 2014 |
| Method of preventing surface roughening during hydrogen prebake of SiGe substrates H Chen, DM Mocuta, RJ Murphy, SW Bedell, DK Sadana US Patent 6,958,286, 2005 | 301 | 2005 |
| Layer-resolved graphene transfer via engineered strain layers J Kim, H Park, JB Hannon, SW Bedell, K Fogel, DK Sadana, ... Science 342 (6160), 833-836, 2013 | 256 | 2013 |
| Germanium channel MOSFETs: Opportunities and challenges H Shang, MM Frank, EP Gusev, JO Chu, SW Bedell, KW Guarini, M Ieong IBM Journal of Research and Development 50 (4.5), 377-386, 2006 | 245 | 2006 |
| CMOS-integrated high-speed MSM germanium waveguide photodetector S Assefa, F Xia, SW Bedell, Y Zhang, T Topuria, PM Rice, YA Vlasov Optics Express 18 (5), 4986-4999, 2010 | 238 | 2010 |
| Extremely flexible nanoscale ultrathin body silicon integrated circuits on plastic D Shahrjerdi, SW Bedell Nano letters 13 (1), 315-320, 2013 | 220 | 2013 |
| Kerf-less removal of Si, Ge, and III–V layers by controlled spalling to enable low-cost PV technologies SW Bedell, D Shahrjerdi, B Hekmatshoar, K Fogel, PA Lauro, JA Ott, ... IEEE Journal of Photovoltaics 2 (2), 141-147, 2012 | 212 | 2012 |
| High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology D Shahrjerdi, SW Bedell, C Ebert, C Bayram, B Hekmatshoar, K Fogel, ... Applied physics letters 100 (5), 2012 | 132 | 2012 |
| A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ... 2011 International Electron Devices Meeting, 28.1. 1-28.1. 4, 2011 | 129 | 2011 |
| Layer transfer by controlled spalling SW Bedell, K Fogel, P Lauro, D Shahrjerdi, JA Ott, D Sadana Journal of Physics D: Applied Physics 46 (15), 152002, 2013 | 124 | 2013 |
| Strain scaling for CMOS SW Bedell, A Khakifirooz, DK Sadana Mrs Bulletin 39 (2), 131-137, 2014 | 114 | 2014 |
| Ultralight high-efficiency flexible InGaP/(In) GaAs tandem solar cells on plastic D Shahrjerdi, SW Bedell, C Bayram, CC Lubguban, K Fogel, P Lauro, ... Adv. Energy Mater 3 (5), 566-571, 2013 | 93 | 2013 |
| Investigation of surface blistering of hydrogen implanted crystals SW Bedell, WA Lanford Journal of Applied Physics 90 (3), 1138-1146, 2001 | 85 | 2001 |
| Improved germanium n+/p junction diodes formed by coimplantation of antimony and phosphorus J Kim, SW Bedell, DK Sadana Applied Physics Letters 98 (8), 2011 | 80 | 2011 |
| Mobility scaling in short-channel length strained Ge-on-insulator P-MOSFETs SW Bedell, A Majumdar, JA Ott, J Arnold, K Fogel, SJ Koester, DK Sadana IEEE Electron Device Letters 29 (7), 811-813, 2008 | 71 | 2008 |
| CMOS-integrated 40GHz germanium waveguide photodetector for on-chip optical interconnects S Assefa, F Xia, SW Bedell, Y Zhang, T Topuria, PM Rice, YA Vlasov Optical Fiber Communication Conference, OMR4, 2009 | 64 | 2009 |
| Activation of implanted n-type dopants in Ge over the active concentration of 1× 1020 cm− 3 using coimplantation of Sb and P J Kim, SW Bedell, SL Maurer, R Loesing, DK Sadana Electrochemical and Solid-State Letters 13 (1), H12, 2009 | 59 | 2009 |
| Performance enhancement on sub-70 nm strained silicon SOI MOSFETs on ultra-thin thermally mixed strained silicon/SiGe on insulator (TM-SGOI) substrate with raised S/D BH Lee, A Mocuta, S Bedell, H Chen, D Sadana, K Rim, P O'Neil, R Mo, ... Digest. International Electron Devices Meeting,, 946-948, 2002 | 57 | 2002 |
| Multiple implantation and multiple annealing of phosphorus doped germanium to achieve n-type activation near the theoretical limit J Kim, SW Bedell, DK Sadana Applied Physics Letters 101 (11), 2012 | 55 | 2012 |
| Low-temperature epitaxy of compressively strained silicon directly on silicon substrates D Shahrjerdi, B Hekmatshoar, SW Bedell, M Hopstaken, DK Sadana Journal of Electronic Materials 41, 494-497, 2012 | 52 | 2012 |
Devendra SadanaibmVerified email at us.ibm.com
