Douglas A. Buchanan
Douglas A. Buchanan
Verified email at umanitoba.ca - Homepage
Title
Cited by
Cited by
Year
CMOS scaling into the nanometer regime
Y Taur, DA Buchanan, W Chen, DJ Frank, KE Ismail, SH Lo, ...
Proceedings of the IEEE 85 (4), 486-504, 1997
11081997
Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
SH Lo, DA Buchanan, Y Taur, W Wang
IEEE Electron Device Letters 18 (5), 209-211, 1997
10191997
Scaling the gate dielectric: materials, integration, and reliability
DA Buchanan
IBM journal of research and development 43 (3), 245-264, 1999
4901999
Volatile and non-volatile memories in silicon with nano-crystal storage
S Tiwari, F Rana, K Chan, H Hanafi, W Chan, D Buchanan
Proceedings of International Electron Devices Meeting, 521-524, 1995
4891995
Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues
EP Gusev, E Cartier, DA Buchanan, M Gribelyuk, M Copel, ...
Microelectronic Engineering 59 (1-4), 341-349, 2001
4502001
Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen
E Cartier, JH Stathis, DA Buchanan
Applied physics letters 63 (11), 1510-1512, 1993
3721993
Ultrathin high-K gate stacks for advanced CMOS devices
EP Gusev, DA Buchanan, E Cartier, A Kumar, D DiMaria, S Guha, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224á…, 2001
3672001
Diamond-like carbon films from a hydrocarbon helium plasma
FD Bailey, DA Buchanan, AC Callegari, HM Clearfield, FE Doany, ...
US Patent 5,470,661, 1995
3011995
Precursor source mixtures
DA Buchanan, DA Neumayer
US Patent 6,984,591, 2006
2732006
Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides
SH Lo, DA Buchanan, Y Taur
IBM Journal of Research and Development 43 (3), 327-337, 1999
2571999
Self‐consistent modeling of accumulation layers and tunneling currents through very thin oxides
F Rana, S Tiwari, DA Buchanan
Applied physics letters 69 (8), 1104-1106, 1996
2511996
Anode hole injection and trapping in silicon dioxide
DJ DiMaria, E Cartier, DA Buchanan
Journal of applied physics 80 (1), 304-317, 1996
2321996
80 nm polysilicon gated n-FETs with ultra-thin Al2O3 gate dielectric for ULSI applications
DA Buchanan, EP Gusev, E Cartier, H Okorn-Schmidt, K Rim, ...
Electron Devices Meeting, 2000. IEDM'00. Technical Digest. Internationalá…, 2000
172*2000
Interface and bulk trap generation in metal‐oxide‐semiconductor capacitors
DA Buchanan, DJ DiMaria
Journal of applied physics 67 (12), 7439-7452, 1990
1671990
Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment
A Callegari, PD Hoh, DA Buchanan, D Lacey
Applied physics letters 54 (4), 332-334, 1989
1661989
CMOS scaling into the 21st century: 0.1 Ám and beyond
Y Taur, YJ Mii, DJ Frank, HS Wong, DA Buchanan, SJ Wind, SA Rishton, ...
IBM Journal of Research and Development 39 (1.2), 245-260, 1995
1561995
Interfacial oxidation process for high-k gate dielectric process integration
AW Ballantine, DA Buchanan, EA Cartier, KK Chan, MW Copel, ...
US Patent 6,444,592, 2002
1522002
Interface states induced by the presence of trapped holes near the silicon–silicon‐dioxide interface
DJ DiMaria, DA Buchanan, JH Stathis, RE Stahlbush
Journal of applied physics 77 (5), 2032-2040, 1995
1041995
Reliability and integration of ultra-thin gate dielectrics for advanced CMOS
DA Buchanan, SH Lo
Microelectronic Engineering 36 (1-4), 13-20, 1997
1021997
Atomic hydrogen‐induced interface degradation of reoxidized‐nitrided silicon dioxide on silicon
E Cartier, DA Buchanan, GJ Dunn
Applied physics letters 64 (7), 901-903, 1994
941994
The system can't perform the operation now. Try again later.
Articles 1–20