| Studies on structural and dielectric properties of NbO2-Nb2O5 thin-film-based devices K Islam, R Sultana, B Satpati, S Chakraborty Vacuum 195, 110675, 2022 | 12 | 2022 |
| Effect of Zr doping and lattice oxygen release on the resistive switching properties of ZrxHf1− xO2-based metal-oxide-semiconductor devices R Sultana, K Islam, A Rakshit, M Mukherjee, S Chakraborty Microelectronic Engineering 216, 111099, 2019 | 11 | 2019 |
| Effect of oxygen content and crystallization temperature on the insulator-to-metal transition properties of vanadium oxide thin-films A Rakshit, K Islam, R Sultana, S Chakraborty Vacuum 180, 109633, 2020 | 9 | 2020 |
| X-ray reflectivity and X-ray photoelectron spectroscopy studies on reactively sputtered -based thin-film devices K Islam, R Sultana, A Rakshit, UK Goutam, S Chakraborty SN Applied Sciences 2 (4), 782, 2020 | 5* | 2020 |
| ZrO2 Reduction at Low Temperature in Co-Sputtered ZrxHf1− xO2 Thin-Films R Sultana, K Islam, S Chakraborty Journal of Nature, Science & Technology 4, 11-15, 2021 | 1 | 2021 |
| Opto-electronic properties of ZrxHf1− xO2/Al/ZrxHf1− xO2 thin-films: The influence of substrate temperature R Sultana, K Islam, M Saifuddin, B Satpati, S Chakraborty Vacuum 213, 112058, 2023 | | 2023 |
| Characterization and electrical response of reactively sputtered thin film deposited at oxygen and nitrous oxide environment K Islam, R Sultana, S Chakraborty INTERNATIONAL JOURNAL OF INNOVATIVE RESEARCH IN PHYSICS 3 (2), 28-34, 2022 | | 2022 |
| Influence of oxygen and argon ratio on electrical and physical characteristics of ZrxHf1–xO2- based MOS devices R Sultana, K Islam, S Chakraborty INTERNATIONAL JOURNAL OF INNOVATIVE RESEARCH IN PHYSICS 3 (2), 21-27, 2022 | | 2022 |
Karimul IslamSenior Research Fellow, Saha Institute of Nuclear PhysicsVerified email at saha.ac.in
