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Kean Boon Lee
Kean Boon Lee
Verified email at sheffield.ac.uk
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Year
The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
10532018
A study of dislocations in AlN and GaN films grown on sapphire substrates
J Bai, T Wang, PJ Parbrook, KB Lee, AG Cullis
Journal of crystal growth 282 (3), 290-296, 2005
1022005
III-Nitride High Electron Mobility Transistor Structures and Methods for Fabrication of Same
L Yuan, PGQ Lo, H Sun, KB Lee, W Wang, SL Selvaraj
US Patent 20,150,255,547, 2015
512015
Optical investigation of exciton localization in AlxGa1-xN
KB Lee, PJ Parbrook, T Wang, F Ranalli, T Martin, RS Balmer, DJ Wallis
Journal of Applied Physics 101 (5), 3513, 2007
462007
Greatly improved performance of 340 nm light emitting diodes using a very thin GaN interlayer on a high temperature AlN buffer layer
T Wang, KB Lee, J Bai, PJ Parbrook, RJ Airey, Q Wang, G Hill, F Ranalli, ...
Applied physics letters 89 (8), 1126, 2006
422006
The origin of the high ideality factor in AlGaN‐based quantum well ultraviolet light emitting diodes
KB Lee, PJ Parbrook, T Wang, J Bai, F Ranalli, RJ Airey, G Hill
physica status solidi (b) 247 (7), 1761-1763, 2010
372010
InGaN/GaN quantum wells with low growth temperature GaN cap layers
ST Pendlebury, PJ Parbrook, DJ Mowbray, DA Wood, KB Lee
Journal of Crystal Growth 307 (2), 363-366, 2007
362007
Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers
FS Choi, JT Griffiths, C Ren, KB Lee, ZH Zaidi, PA Houston, I Guiney, ...
Journal of Applied Physics 124 (5), 055702, 2018
332018
All-GaN Integrated Cascode Heterojunction Field Effect Transistors
S Jiang, KB Lee, I Guiney, PF Miaja, ZH Zaidi, H Qian, DJ Wallis, ...
IEEE Transactions on Power Electronics, 2017
302017
Effect of the AlGaN electron blocking layer thickness on the performance of AlGaN-based ultraviolet light-emitting diodes
KB Lee, PJ Parbrook, T Wang, J Bai, F Ranalli, RJ Airey, G Hill
Journal of Crystal Growth 311 (10), 2857-2859, 2009
272009
Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs
WM Waller, S Karboyan, MJ Uren, KB Lee, P Houston, DJ Wallis, I Guiney, ...
IEEE, 2015
242015
Enhancement mode operation in AlInN/GaN (MIS) HEMTs on Si substrates using a fluorine implant
ZH Zaidi, KB Lee, I Guiney, H Qian, S Jiang, DJ Wallis, CJ Humphreys, ...
Semiconductor Science and Technology 30 (10), 105007, 2015
232015
High-Performance Enhancement-Mode p-channel GaN MISFETs with Steep Subthreshold Swing
Y Yin, KB Lee
IEEE Electron Device Letters, 2022
222022
Two coexisting mechanisms of dislocation reduction in an AlGaN layer grown using a thin GaN interlayer
J Bai, T Wang, PJ Parbrook, Q Wang, KB Lee, AG Cullis
Applied Physics Letters 91 (13), 131903, 2007
202007
Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer …
JW Roberts, PR Chalker, KB Lee, PA Houston, SJ Cho, IG Thayne, ...
Applied Physics Letters 108 (7), 072901, 2016
192016
Exploring an Approach toward the Intrinsic Limits of GaN Electronics
S Jiang, Y Cai, P Feng, S Shen, X Zhao, P Fletcher, V Esendag, KB Lee, ...
ACS applied materials & interfaces 12 (11), 12949-12954, 2020
162020
Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth
H Qian, KB Lee, SH Vajargah, SV Novikov, I Guiney, ZH Zaidi, S Jiang, ...
Journal of Crystal Growth 459, 185-188, 2017
162017
Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of+ 3.0 V and blocking voltage above 1000 V
KB Lee, I Guiney, S Jiang, ZH Zaidi, H Qian, DJ Wallis, MJ Uren, M Kuball, ...
Applied Physics Express 8 (3), 036502, 2015
162015
Analysis of gain variation with changing supply voltages in GaN HEMTs for envelope tracking power amplifiers
A Alt, H Hirshy, S Jiang, KB Lee, MA Casbon, P Chen, PA Houston, ...
IEEE Transactions on Microwave Theory and Techniques 67 (7), 2495-2504, 2019
142019
Controllable Uniform Green Light Emitters Enabled by Circular HEMT-LED Devices
Y Cai, Y Gong, J Bai, X Yu, C Zhu, V Esendag, KB Lee, T Wang
IEEE Photonics Journal 10 (5), 1-7, 2018
142018
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