| Antibacterial and antifungal activity of photoactivated ZnO nanoparticles in suspension K Kairyte, A Kadys, Z Luksiene Journal of Photochemistry and Photobiology B: Biology 128, 78-84, 2013 | 253 | 2013 |
| Black silicon: substrate for laser 3D micro/nano-polymerization A Žukauskas, M Malinauskas, A Kadys, G Gervinskas, G Seniutinas, ... Optics express 21 (6), 6901-6909, 2013 | 92 | 2013 |
| Silicon detectors for the sLHC A Affolder, A Aleev, PP Allport, L Andricek, M Artuso, JP Balbuena, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2011 | 44 | 2011 |
| InxGa1− xN performance as a band-gap-tunable photo-electrode in acidic and basic solutions J Juodkazytė, B Šebeka, I Savickaja, A Kadys, E Jelmakas, T Grinys, ... Solar energy materials and solar cells 130, 36-41, 2014 | 33 | 2014 |
| Remote epitaxy of GaN via graphene on GaN/sapphire templates K Badokas, A Kadys, J Mickevičius, I Ignatjev, M Skapas, S Stanionytė, ... Journal of Physics D: Applied Physics 54 (20), 205103, 2021 | 30 | 2021 |
| Optical and structural properties of BGaN layers grown on different substrates A Kadys, J Mickevičius, T Malinauskas, J Jurkevičius, M Kolenda, ... Journal of Physics D: Applied Physics 48 (46), 465307, 2015 | 30 | 2015 |
| Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth J Mickevičius, D Dobrovolskas, T Steponavičius, T Malinauskas, ... Applied Surface Science 427, 1027-1032, 2018 | 27 | 2018 |
| Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers Ž Podlipskas, R Aleksiejūnas, A Kadys, J Mickevičius, J Jurkevičius, ... Journal of Physics D: Applied Physics 49 (14), 145110, 2016 | 25 | 2016 |
| Growth of InN and In-rich InGaN layers on GaN templates by pulsed metalorganic chemical vapor deposition A Kadys, T Malinauskas, T Grinys, M Dmukauskas, J Mickevičius, ... Journal of Electronic Materials 44, 188-193, 2015 | 22 | 2015 |
| Growth of BGaN epitaxial layers using close‐coupled showerhead MOCVD T Malinauskas, A Kadys, S Stanionytė, K Badokas, J Mickevičius, ... physica status solidi (b) 252 (5), 1138-1141, 2015 | 19 | 2015 |
| Impact of diffusivity to carrier recombination rate in nitride semiconductors: from bulk GaN to (In, Ga) N quantum wells R Aleksiejūnas, P Ščajev, S Nargelas, T Malinauskas, A Kadys, ... Japanese Journal of Applied Physics 52 (8S), 08JK01, 2013 | 14 | 2013 |
| Temperature-dependent efficiency droop in AlGaN epitaxial layers and quantum wells J Mickevičius, J Jurkevičius, A Kadys, G Tamulaitis, M Shur, M Shatalov, ... AIP advances 6 (4), 2016 | 12 | 2016 |
| In situ variations of recombination characteristics in MOCVD grown GaN epi-layers during 1.7 MeV protons irradiation E Gaubas, V Kovalevskij, A Kadys, M Gaspariunas, J Mickevicius, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2013 | 12 | 2013 |
| Impact of carrier localization, recombination, and diffusivity on excited state dynamics in InGaN/GaN quantum wells T Malinauskas, A Kadys, T Grinys, S Nargelas, R Aleksiejūnas, ... Gallium Nitride Materials and Devices Vii 8262, 269-276, 2012 | 12 | 2012 |
| Nonlinear carrier recombination and transport features in highly excited InN layer S Nargelas, T Malinauskas, A Kadys, E Dimakis, TD Moustakas, ... physica status solidi c 6 (S2 2), S735-S738, 2009 | 12 | 2009 |
| Photoluminescence efficiency of BGaN epitaxial layers with high boron content J Jurkevičius, J Mickevičius, A Kadys, M Kolenda, G Tamulaitis Physica B: Condensed Matter 492, 23-26, 2016 | 11 | 2016 |
| Application of picosecond four‐wave mixing and photoluminescence techniques for investigation of carrier dynamics in bulk crystals and heterostructures of GaN K Jarašiūnas, T Malinauskas, A Kadys, R Aleksiejūnas, M Sūdžius, ... physica status solidi (c) 2 (3), 1006-1009, 2005 | 11 | 2005 |
| Significant carrier extraction enhancement at the interface of an InN/p-GaN heterojunction under reverse bias voltage V Svrcek, M Kolenda, A Kadys, I Reklaitis, D Dobrovolskas, ... Nanomaterials 8 (12), 1039, 2018 | 10 | 2018 |
| Direct Auger recombination and density-dependent hole diffusion in InN R Aleksiejūnas, Ž Podlipskas, S Nargelas, A Kadys, M Kolenda, ... Scientific reports 8 (1), 4621, 2018 | 10 | 2018 |
| Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band J Mickevičius, D Dobrovolskas, R Aleksiejūnas, K Nomeika, T Grinys, ... Journal of Crystal Growth 459, 173-177, 2017 | 10 | 2017 |
