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Wriddhi Chakraborty
Wriddhi Chakraborty
Components Research, Intel
Verified email at intel.com
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Cited by
Year
Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors
SS Cheema, N Shanker, LC Wang, CH Hsu, SL Hsu, YH Liao, ...
Nature 604 (7904), 65-71, 2022
1232022
Monolithic 3D integration of high endurance multi-bit ferroelectric FET for accelerating compute-in-memory
S Dutta, H Ye, W Chakraborty, YC Luo, M San Jose, B Grisafe, A Khanna, ...
2020 IEEE International Electron Devices Meeting (IEDM), 36.4. 1-36.4. 4, 2020
862020
A comprehensive model for ferroelectric FET capturing the key behaviors: Scalability, variation, stochasticity, and accumulation
S Deng, G Yin, W Chakraborty, S Dutta, S Datta, X Li, K Ni
2020 IEEE symposium on VLSI technology, 1-2, 2020
752020
Programmable coupled oscillators for synchronized locomotion
S Dutta, A Parihar, A Khanna, J Gomez, W Chakraborty, M Jerry, B Grisafe, ...
Nature communications 10 (1), 3299, 2019
682019
Fundamental understanding and control of device-to-device variation in deeply scaled ferroelectric FETs
K Ni, W Chakraborty, J Smith, B Grisafe, S Datta
2019 Symposium on VLSI Technology, T40-T41, 2019
672019
Design and analysis of an ultra-dense, low-leakage, and fast FeFET-based random access memory array
D Reis, K Ni, W Chakraborty, X Yin, M Trentzsch, SD Dünkel, T Melde, ...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 5 …, 2019
642019
BEOL compatible dual-gate ultra thin-body W-doped indium-oxide transistor with Ion= 370μA/μm, SS= 73mV/dec and Ion/Ioff Ratio> 4× 109
W Chakraborty, B Grisafe, H Ye, I Lightcap, K Ni, S Datta
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
542020
Double-gate W-doped amorphous indium oxide transistors for monolithic 3D capacitorless gain cell eDRAM
H Ye, J Gomez, W Chakraborty, S Spetalnick, S Dutta, K Ni, ...
2020 IEEE International Electron Devices Meeting (IEDM), 28.3. 1-28.3. 4, 2020
462020
Examination of the interplay between polarization switching and charge trapping in ferroelectric FET
S Deng, Z Jiang, S Dutta, H Ye, W Chakraborty, S Kurinec, S Datta, K Ni
2020 IEEE International Electron Devices Meeting (IEDM), 4.4. 1-4.4. 4, 2020
452020
In-memory computing primitive for sensor data fusion in 28 nm HKMG FeFET technology
K Ni, B Grisafe, W Chakraborty, AK Saha, S Dutta, M Jerry, JA Smith, ...
2018 IEEE International Electron Devices Meeting (IEDM), 16.1. 1-16.1. 4, 2018
442018
Equivalent oxide thickness (EOT) scaling with hafnium zirconium oxide high-κ dielectric near morphotropic phase boundary
K Ni, A Saha, W Chakraborty, H Ye, B Grisafe, J Smith, GB Rayner, ...
2019 IEEE international electron devices meeting (IEDM), 7.4. 1-7.4. 4, 2019
372019
Low thermal budget (< 250° C) dual-gate amorphous indium tungsten oxide (IWO) thin-film transistor for monolithic 3-D integration
W Chakraborty, H Ye, B Grisafe, I Lightcap, S Datta
IEEE Transactions on Electron Devices 67 (12), 5336-5342, 2020
362020
Toward attojoule switching energy in logic transistors
S Datta, W Chakraborty, M Radosavljevic
Science 378 (6621), 733-740, 2022
282022
Biologically plausible ferroelectric quasi-leaky integrate and fire neuron
S Dutta, A Saha, P Panda, W Chakraborty, J Gomez, A Khanna, S Gupta, ...
2019 Symposium on VLSI Technology, T140-T141, 2019
262019
An empirically validated virtual source FET model for deeply scaled cool CMOS
W Chakraborty, K Ni, J Smith, A Raychowdhury, S Datta
2019 IEEE International Electron Devices Meeting (IEDM), 39.4. 1-39.4. 4, 2019
192019
Benchmarking monolithic 3D integration for compute-in-memory accelerators: overcoming ADC bottlenecks and maintaining scalability to 7nm or beyond
X Peng, W Chakraborty, A Kaul, W Shim, MS Bakir, S Datta, S Yu
2020 IEEE International Electron Devices Meeting (IEDM), 30.4. 1-30.4. 4, 2020
162020
Characterization and modeling of 22 nm FDSOI cryogenic RF CMOS
W Chakraborty, KA Aabrar, J Gomez, R Saligram, A Raychowdhury, P Fay, ...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 7 …, 2021
152021
Cryogenic RF CMOS on 22nm FDSOI Platform with Record fT=495GHz and fMAX=497GHz
W Chakraborty, KA Aabrar, J Gomez, R Saligram, A Raychowdhury, P Fay, ...
2021 Symposium on VLSI Technology, 1-2, 2021
122021
Spoken vowel classification using synchronization of phase transition nano-oscillators
S Dutta, A Khanna, W Chakraborty, J Gomez, S Joshi, S Datta
2019 Symposium on VLSI Technology, T128-T129, 2019
112019
Quantitative differentiation of multiple virus in blood using nanoporous silicon oxide immunosensor and artificial neural network
W Chakraborty, R Ray, N Samanta, C RoyChaudhuri
Biosensors and Bioelectronics 98, 180-188, 2017
102017
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