| Vertically stacked-nanowires MOSFETs in a replacement metal gate process with inner spacer and SiGe source/drain S Barraud, V Lapras, MP Samson, L Gaben, L Grenouillet, ... 2016 IEEE International Electron Devices Meeting (IEDM), 17.6. 1-17.6. 4, 2016 | 116 | 2016 |
| Chemical and structural properties of conducting nanofilaments in TiN/HfO2-based resistive switching structures P Calka, E Martinez, V Delaye, D Lafond, G Audoit, D Mariolle, ... Nanotechnology 24 (8), 085706, 2013 | 92 | 2013 |
| 3D analysis of advanced nano-devices using electron and atom probe tomography A Grenier, S Duguay, JP Barnes, R Serra, G Haberfehlner, D Cooper, ... Ultramicroscopy 136, 185-192, 2014 | 68 | 2014 |
| Strain induced photoluminescence from silicon and germanium nanowire arrays G Audoit, ÉN Mhuircheartaigh, SM Lipson, MA Morris, WJ Blau, ... Journal of materials chemistry 15 (45), 4809-4815, 2005 | 68 | 2005 |
| Strain mapping at the nanoscale using precession electron diffraction in transmission electron microscope with off axis camera MP Vigouroux, V Delaye, N Bernier, R Cipro, D Lafond, G Audoit, T Baron, ... Applied Physics Letters 105 (19), 2014 | 50 | 2014 |
| Three dimensional imaging and analysis of a single nano-device at the ultimate scale using correlative microscopy techniques A Grenier, S Duguay, JP Barnes, R Serra, N Rolland, G Audoit, P Morin, ... Applied Physics Letters 106 (21), 2015 | 43 | 2015 |
| Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology S Reboh, R Coquand, S Barraud, N Loubet, N Bernier, G Audoit, ... Applied Physics Letters 112 (5), 2018 | 37 | 2018 |
| Formation mechanism and properties of twinned structures in (111) seeded directionally solidified solar grade silicon VA Oliveira, B Marie, C Cayron, M Marinova, MG Tsoutsouva, HC Sio, ... Acta Materialia 121, 24-36, 2016 | 35 | 2016 |
| Ultra high density three dimensional capacitors based on Si nanowires array grown on a metal layer PH Morel, G Haberfehlner, D Lafond, G Audoit, V Jousseaume, C Leroux, ... Applied Physics Letters 101 (8), 2012 | 33 | 2012 |
| Tunability of parasitic channel in gate-all-around stacked nanosheets S Barraud, B Previtali, V Lapras, C Vizioz, JM Hartmann, S Martinie, ... 2018 IEEE international Electron devices meeting (IEDM), 21.3. 1-21.3. 4, 2018 | 32 | 2018 |
| Preparation and analysis of atom probe tips by xenon focused ion beam milling R Estivill, G Audoit, JP Barnes, A Grenier, D Blavette Microscopy and Microanalysis 22 (3), 576-582, 2016 | 29 | 2016 |
| Self-adapting denoising, alignment and reconstruction in electron tomography in materials science T Printemps, G Mula, D Sette, P Bleuet, V Delaye, N Bernier, A Grenier, ... Ultramicroscopy 160, 23-34, 2016 | 29 | 2016 |
| Specifications for hard condensed matter specimens for three-dimensional high-resolution tomographies P Bleuet, G Audoit, JP Barnes, J Bertheau, Y Dabin, H Dansas, JM Fabbri, ... Microscopy and microanalysis 19 (3), 726-739, 2013 | 29 | 2013 |
| Atom probe tomography for advanced nanoelectronic devices: Current status and perspectives JP Barnes, A Grenier, I Mouton, S Barraud, G Audoit, J Bogdanowicz, ... Scripta Materialia 148, 91-97, 2018 | 27 | 2018 |
| Size dependent thermal properties of embedded crystalline germanium nanowires G Audoit, JS Kulkarni, MA Morris, JD Holmes Journal of Materials Chemistry 17 (16), 1608-1613, 2007 | 26 | 2007 |
| High performance low temperature activated devices and optimization guidelines for 3D VLSI integration of FD, TriGate, FinFET on insulator L Pasini, P Batude, M Cassé, B Mathieu, B Sklenard, FP Luce, S Reboh, ... 2015 Symposium on VLSI Technology (VLSI Technology), T50-T51, 2015 | 23 | 2015 |
| Four-dimensional spectral low-loss energy-filtered transmission electron tomography of silicon nanowire-based capacitors G Haberfehlner, P Bayle-Guillemaud, G Audoit, D Lafond, PH Morel, ... Applied Physics Letters 101 (6), 2012 | 22 | 2012 |
| Direct bonding mechanism of ALD-Al2O3 thin films E Beche, F Fournel, V Larrey, F Rieutord, C Morales, AM Charvet, ... ECS Journal of Solid State Science and Technology 4 (5), P171, 2015 | 21 | 2015 |
| Understanding of a new approach for silicon nitride spacer etching using gaseous hydrofluoric acid after hydrogen ion implantation V Ah-Leung, O Pollet, N Possémé, M Garcia Barros, N Rochat, C Guedj, ... Journal of Vacuum Science & Technology A 35 (2), 2017 | 20 | 2017 |
| A novel PFIB sample preparation protocol for correlative 3D X-ray CNT and FIB-TOF-SIMS tomography A Priebe, G Audoit, JP Barnes Ultramicroscopy 173, 10-13, 2017 | 20 | 2017 |
