Researcher, Air liquide laboratories
Verified email at airliquide.com
Cited by
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Stable amorphous In2O3-based thin-film transistors by incorporating SiO2 to suppress oxygen vacancies
N Mitoma, S Aikawa, X Gao, T Kizu, M Shimizu, MF Lin, T Nabatame, ...
Applied Physics Letters 104 (10), 102103, 2014
Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability
T Kizu, S Aikawa, N Mitoma, et al.
Applied Physics Letters 104 (15), 152103, 2014
Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si-and W-dopants
N Mitoma, S Aikawa, W Ou-Yang, X Gao, T Kizu, MF Lin, A Fujiwara, ...
Applied Physics Letters 106 (4), 042106, 2015
Catalytic graphitization of an amorphous carbon film under focused electron beam irradiation due to the presence of sputtered nickel metal particles
S Aikawa, T Kizu, E Nishikawa
Carbon 48 (10), 2997-2999, 2010
Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors
S Aikawa, N Mitoma, T Kizu, T Nabatame, K Tsukagoshi
Applied Physics Letters 106 (19), 192103, 2015
Codoping of zinc and tungsten for practical high-performance amorphous indium-based oxide thin film transistors
T Kizu, N Mitoma, M Miyanaga, H Awata, T Nabatame, K Tsukagoshi
Journal of Applied Physics 118 (12), 125702, 2015
Self-formed copper oxide contact interlayer for high-performance oxide thin film transistors
X Gao, S Aikawa, N Mitoma, MF Lin, T Kizu, T Nabatame, K Tsukagoshi
Applied Physics Letters 105 (2), 023503, 2014
Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage
T Kizu, S Aikawa, T Nabatame, A Fujiwara, K Ito, M Takahashi, ...
Journal of Applied Physics 120 (4), 045702, 2016
High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer
Y Wang, T Kizu, L Song, Y Zhang, S Jiang, J Qian, Q Wang, Y Shi, ...
Journal of Materials Chemistry C 4 (34), 7917-7923, 2016
Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process
MF Lin, X Gao, N Mitoma, T Kizu, W Ou-Yang, S Aikawa, T Nabatame, ...
AIP Advances 5 (1), 017116, 2015
Phase transitions from semiconductive amorphous to conductive polycrystalline in indium silicon oxide thin films
N Mitoma, B Da, H Yoshikawa, T Nabatame, M Takahashi, K Ito, T Kizu, ...
Applied Physics Letters 109 (22), 221903, 2016
Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
K Kurishima, T Nabatame, M Shimizu, N Mitoma, T Kizu, S Aikawa, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 33 (6 …, 2015
Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors
W Ou-Yang, N Mitoma, T Kizu, X Gao, MF Lin, T Nabatame, K Tsukagoshi
Applied Physics Letters 105 (16), 163503, 2014
Amorphous In-Si-O films fabricated via solution processing
HE Jan, H Hoang, T Nakamura, T Koga, T Ina, T Uruga, T Kizu, ...
Journal of Electronic Materials 46 (6), 3610-3614, 2017
Carbon nanomaterial synthesis from sucrose solution without using graphite electrodes
S Aikawa, T Kizu, E Nishikawa, T Kioka
Chemistry letters 36 (12), 1426-1427, 2007
Effect of carbon doping on threshold voltage and mobility of In-Si-O thin-film transistors
K Kurishima, T Nabatame, N Mitoma, T Kizu, S Aikawa, K Tsukagoshi, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2018
Si-doping effect on solution-processed In-O thin-film transistors
H Hoang, T Hori, T Yasuda, T Kizu, K Tsukagoshi, T Nabatame, ...
Materials Research Express 6 (2), 026410, 2018
Molar Concentration Dependence of Sucrose Solution in Carbon Nanotube Synthesis by Liquid-Phase Arc Discharge
S Aikawa, T Kizu, K Kamei, E Nishikawa
e-Journal of Surface Science and Nanotechnology 9, 215-218, 2011
AIP Adv. 5, 017116 (2015)
MF Lin, X Gao, N Mitoma, T Kizu, W Ou-Yang, S Aikawa, T Nabatame, ...
Prospectively of carbon-doped indium-tungsten-oxide channel TFT for bias stress instability
K Kurishima, T Nabatame, T Kizu, N Mitoma, K Tsukagoshi, T Sawada, ...
ECS Transactions 75 (10), 149, 2016
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