Plasma immersion ion implantation—A fledgling technique for semiconductor processing PK Chu, S Qin, C Chan, NW Cheung, LA Larson Materials Science and Engineering: R: Reports 17 (6-7), 207-280, 1996 | 478 | 1996 |
Methods for determining a dose of an impurity implanted in a semiconductor substrate S Qin, A McTeer US Patent 7,592,212, 2009 | 317 | 2009 |
Recovery of nickel from aqueous solutions by complexation-ultrafiltration process with sodium polyacrylate and polyethylenimine J Shao, S Qin, J Davidson, W Li, Y He, HS Zhou Journal of hazardous materials 244, 472-477, 2013 | 81 | 2013 |
Plasma immersion ion implantation doping experiments for microelectronics S Qin, C Chan Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1994 | 73 | 1994 |
Hydrogenation of polycrystalline silicon thin film transistors by plasma ion implantation JD Bernstein, S Qin, C Chan, TJ King IEEE Electron Device Letters 16 (10), 421-423, 1995 | 66 | 1995 |
Instrumental and process considerations for the fabrication of silicon-on-insulators (SOI) structures by plasma immersion ion implantation PK Chu, S Qin, C Chan, NW Cheung, PK Ko IEEE transactions on plasma science 26 (1), 79-84, 1998 | 65 | 1998 |
Plasma immersion ion implantation doping using a microwave multipolar bucket plasma S Qin, NE McGruer, C Chan, K Warner IEEE transactions on electron devices 39 (10), 2354-2358, 1992 | 63 | 1992 |
Wafer dependence of Johnsen–Rahbek type electrostatic chuck for semiconductor processes S Qin, A McTeer Journal of Applied Physics 102 (6), 2007 | 56 | 2007 |
The response of a microwave multipolar bucket plasma to a high voltage pulse S Qin, C Chan, NE McGruer, J Browning, K Warner IEEE transactions on plasma science 19 (6), 1272-1278, 1991 | 43 | 1991 |
Plasma ion implantation hydrogenation process utilizing voltage pulse applied to substrate C Chan, S Qin US Patent 5,508,227, 1996 | 42 | 1996 |
The effect of high-dose nitrogen plasma immersion ion implantation on silicone surfaces IF Husein, C Chan, S Qin, PK Chu Journal of Physics D: Applied Physics 33 (22), 2869, 2000 | 38 | 2000 |
MEMS based multi-polar electrostatic chuck PL Kellerman, S Qin, DA Brown US Patent 7,072,165, 2006 | 37 | 2006 |
Energy distribution of boron ions during plasma immersion ion implantation S Qin, C Chan, NE McGruer Plasma Sources Science and Technology 1 (1), 1, 1992 | 37 | 1992 |
SIMS/ARXPS—A new technique of retained dopant dose and profile measurement of ultralow-energy doping processes S Qin, K Zhuang, S Lu, A McTeer, W Morinville, K Noehring IEEE transactions on plasma science 37 (1), 139-145, 2008 | 35 | 2008 |
Method of making a MEMS electrostatic chuck PL Kellerman, S Qin, E Allen, DA Brown US Patent 6,946,403, 2005 | 34 | 2005 |
Method of photoresist strip for plasma doping process of semiconductor manufacturing S Qin, A McTeer, RJ Hanson US Patent 7,737,010, 2010 | 32 | 2010 |
Apparatuses and methods for supporting microelectronic devices during plasma-based fabrication processes S Qin US Patent App. 11/115,728, 2006 | 32 | 2006 |
Charging effects in plasma immersion ion implantation for microelectronics S Qin, JD Bernstein, Z Zhao, W Liu, C Chan, J Shao, S Denholm Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1995 | 32 | 1995 |
Characterization and optimization of a plasma doping process using a pulsed RF-excited B2H6 plasma system S Qin, A McTeer Surface and Coatings Technology 201 (15), 6759-6767, 2007 | 30 | 2007 |
High dose-rate hydrogen passivation of polycrystalline silicon CMOS TFTs by plasma ion implantation JD Bernstein, S Qin, C Chan, TJ King IEEE Transactions on Electron Devices 43 (11), 1876-1882, 1996 | 30 | 1996 |