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Shu Qin
Shu Qin
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Cited by
Cited by
Year
Plasma immersion ion implantation—A fledgling technique for semiconductor processing
PK Chu, S Qin, C Chan, NW Cheung, LA Larson
Materials Science and Engineering: R: Reports 17 (6-7), 207-280, 1996
4781996
Methods for determining a dose of an impurity implanted in a semiconductor substrate
S Qin, A McTeer
US Patent 7,592,212, 2009
3172009
Recovery of nickel from aqueous solutions by complexation-ultrafiltration process with sodium polyacrylate and polyethylenimine
J Shao, S Qin, J Davidson, W Li, Y He, HS Zhou
Journal of hazardous materials 244, 472-477, 2013
812013
Plasma immersion ion implantation doping experiments for microelectronics
S Qin, C Chan
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1994
731994
Hydrogenation of polycrystalline silicon thin film transistors by plasma ion implantation
JD Bernstein, S Qin, C Chan, TJ King
IEEE Electron Device Letters 16 (10), 421-423, 1995
661995
Instrumental and process considerations for the fabrication of silicon-on-insulators (SOI) structures by plasma immersion ion implantation
PK Chu, S Qin, C Chan, NW Cheung, PK Ko
IEEE transactions on plasma science 26 (1), 79-84, 1998
651998
Plasma immersion ion implantation doping using a microwave multipolar bucket plasma
S Qin, NE McGruer, C Chan, K Warner
IEEE transactions on electron devices 39 (10), 2354-2358, 1992
631992
Wafer dependence of Johnsen–Rahbek type electrostatic chuck for semiconductor processes
S Qin, A McTeer
Journal of Applied Physics 102 (6), 2007
562007
The response of a microwave multipolar bucket plasma to a high voltage pulse
S Qin, C Chan, NE McGruer, J Browning, K Warner
IEEE transactions on plasma science 19 (6), 1272-1278, 1991
431991
Plasma ion implantation hydrogenation process utilizing voltage pulse applied to substrate
C Chan, S Qin
US Patent 5,508,227, 1996
421996
The effect of high-dose nitrogen plasma immersion ion implantation on silicone surfaces
IF Husein, C Chan, S Qin, PK Chu
Journal of Physics D: Applied Physics 33 (22), 2869, 2000
382000
MEMS based multi-polar electrostatic chuck
PL Kellerman, S Qin, DA Brown
US Patent 7,072,165, 2006
372006
Energy distribution of boron ions during plasma immersion ion implantation
S Qin, C Chan, NE McGruer
Plasma Sources Science and Technology 1 (1), 1, 1992
371992
SIMS/ARXPS—A new technique of retained dopant dose and profile measurement of ultralow-energy doping processes
S Qin, K Zhuang, S Lu, A McTeer, W Morinville, K Noehring
IEEE transactions on plasma science 37 (1), 139-145, 2008
352008
Method of making a MEMS electrostatic chuck
PL Kellerman, S Qin, E Allen, DA Brown
US Patent 6,946,403, 2005
342005
Method of photoresist strip for plasma doping process of semiconductor manufacturing
S Qin, A McTeer, RJ Hanson
US Patent 7,737,010, 2010
322010
Apparatuses and methods for supporting microelectronic devices during plasma-based fabrication processes
S Qin
US Patent App. 11/115,728, 2006
322006
Charging effects in plasma immersion ion implantation for microelectronics
S Qin, JD Bernstein, Z Zhao, W Liu, C Chan, J Shao, S Denholm
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1995
321995
Characterization and optimization of a plasma doping process using a pulsed RF-excited B2H6 plasma system
S Qin, A McTeer
Surface and Coatings Technology 201 (15), 6759-6767, 2007
302007
High dose-rate hydrogen passivation of polycrystalline silicon CMOS TFTs by plasma ion implantation
JD Bernstein, S Qin, C Chan, TJ King
IEEE Transactions on Electron Devices 43 (11), 1876-1882, 1996
301996
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