Ahmed Rhallabi
Ahmed Rhallabi
Professor
Verified email at cnrs-imn.fr
Title
Cited by
Cited by
Year
Computer simulation of a carbon-deposition plasma in CH/sub 4
A Rhallabi, Y Catherine
IEEE transactions on plasma science 19 (2), 270-277, 1991
1001991
RF plasmas in methane: Prediction of plasma properties and neutral radical densities with combined gas-phase physics and chemistry model
E Gogolides, D Mary, A Rhallabi, G Turban
Japanese journal of applied physics 34 (1R), 261, 1995
941995
Surface and plasma simulation of deposition processes: CH4 plasmas for the growth of diamondlike carbon
NV Mantzaris, E Gogolides, AG Boudouvis, A Rhallabi, G Turban
Journal of applied physics 79 (7), 3718-3729, 1996
921996
Monte Carlo simulation method for etching of deep trenches in Si by a plasma mixture
G Marcos, A Rhallabi, P Ranson
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 21 (1 …, 2003
662003
Global model and diagnostic of a low-pressure SF6/Ar inductively coupled plasma
L Lallement, A Rhallabi, C Cardinaud, MC Peignon-Fernandez, LL Alves
Plasma Sources Science and Technology 18 (2), 025001, 2009
572009
Radio-frequency glow discharges in methane gas: modelling of the gas-phase physics and chemistry
E Gogolides, C Buteau, A Rhallabi, G Turban
Journal of Physics D: Applied Physics 27 (4), 818, 1994
511994
Modeling of fluorine-based high-density plasma etching of anisotropic silicon trenches with oxygen sidewall passivation
MA Blauw, E van der Drift, G Marcos, A Rhallabi
Journal of Applied Physics 94 (10), 6311-6318, 2003
422003
Etching studies of silica glasses in inductively coupled plasmas: Implications for microfluidic devices fabrication
L Lallement, C Gosse, C Cardinaud, MC Peignon-Fernandez, A Rhallabi
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 28 (2 …, 2010
402010
Modeling of inductively coupled plasma SF6/O2/Ar plasma discharge: Effect of O2 on the plasma kinetic properties
A Pateau, A Rhallabi, MC Fernandez, M Boufnichel, F Roqueta
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 32 (2 …, 2014
262014
Growth of nodular defects during film deposition
L Dubost, A Rhallabi, J Perrin, J Schmitt
Journal of applied physics 78 (6), 3784-3791, 1995
221995
Modelling of fluorine based high density plasma for the etching of silica glasses
L Lallement, A Rhallabi, C Cardinaud, MC Peignon Fernandez
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 29 (5 …, 2011
192011
Topographic and kinetic effects of the rate during a cryogenic etching process of silicon
G Marcos, A Rhallabi, P Ranson
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004
182004
Global Model ofHigh-Density Plasma Discharge and 2-D Monte-Carlo Etching Model of InP
R Chanson, A Rhallabi, MC Fernandez, C Cardinaud, S Bouchoule, ...
IEEE Transactions on Plasma Science 40 (4), 959-971, 2012
162012
Estimation of surface kinetic parameters and two-dimensional simulation of InP pattern features during plasma etching
A Rhallabi, L Houlet, G Turban
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 18 (4 …, 2000
152000
Process induced mechanical stress in InP ridge waveguides fabricated by inductively coupled plasma etching
M Avella, J Jiménez, F Pommereau, JP Landesman, A Rhallabi
Applied Physics Letters 93 (13), 131913, 2008
142008
Properties of deep etched trenches in silicon: Role of the angular dependence of the sputtering yield and the etched species redeposition
G Marcos, A Rhallabi, P Ranson
Applied surface science 254 (11), 3576-3584, 2008
132008
Chemically assisted ion beam etching of by argon and chlorine gases: Experimental and simulation investigations
A Rhallabi, M Gaillard, L Elmonser, G Marcos, A Talneau, F Pommereau, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2005
122005
SF6 and C4F8 global kinetic models coupled to sheath models
Y Haidar, A Pateau, A Rhallabi, MC Fernandez, A Mokrani, F Taher, ...
Plasma Sources Science and Technology 23 (6), 065037, 2014
112014
InP surface properties under ICP plasma etching using mixtures of chlorides and hydrides
B Liu, JP Landesman, JL Leclercq, A Rhallabi, M Avella, MA Gonzalez, ...
2006 International Conference on Indium Phosphide and Related Materials …, 2006
102006
Development of chemically assisted etching method for GaAs-based optoelectronic devices
M Gaillard, A Rhallabi, L Elmonser, A Talneau, F Pommereau, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 23 (2 …, 2005
102005
The system can't perform the operation now. Try again later.
Articles 1–20