sethu saveda suvanam
sethu saveda suvanam
Uppsala University
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Cited by
Cited by
Bipolar integrated circuits in SiC for extreme environment operation
CM Zetterling, A HallÚn, R Hedayati, S Kargarrazi, L Lanni, BG Malm, ...
Semiconductor Science and Technology 32 (3), 034002, 2017
Passivation of SiC device surfaces by aluminum oxide
A HallÚn, M Usman, S Suvanam, C Henkel, D Martin, MK Linnarsson
IOP Conference Series: Materials Science and Engineering 56 (1), 012007, 2014
Influence of annealing environment on the ALD-Al2O3/4H-SiC interface studied through XPS
M Usman, M Arshad, SS Suvanam, A HallÚn
Journal of Physics D: Applied Physics 51 (10), 105111, 2018
High gamma ray tolerance for 4H-SiC bipolar circuits
SS Suvanam, SI Kuroki, L Lanni, R Hadayati, T Ohshima, T Makino, ...
IEEE Transactions on Nuclear Science 64 (2), 852-858, 2016
4H-silicon carbide-dielectric interface recombination analysis using free carrier absorption
S Sethu Saveda, G Karolis, U Muhammed, L Margaritha, M David, L Jan, ...
Journal of applied physics 117 (10), 105309, 2015
Stoichiometry of the ALD-Al2O3/4H–SiC interface by synchrotron-based XPS
M Usman, SS Suvanam, MG Yazdi, M G÷thelid, M Sultan, A HallÚn
Journal of Physics D: Applied Physics 49 (25), 255308, 2016
Extreme radiation hard thin film CZTSSe solar cell
SS Suvanam, J Larsen, N Ross, V Kosyak, A HallÚn, CP Bj÷rkman
Solar Energy Materials and Solar Cells 185, 16-20, 2018
Improved interface and electrical properties of atomic layer deposited Al2O3/4H-SiC
SS Suvanam, M Usman, D Martin, MG Yazdi, M Linnarsson, A Tempez, ...
Applied Surface Science 433, 108-115, 2018
Effects of 3-MeV protons on 4H-SiC bipolar devices and integrated OR-NOR gates
SS Suvanam, L Lanni, BG Malm, CM Zetterling, A HallÚn
IEEE Transactions on Nuclear Science 61 (4), 1772-1776, 2014
Improving the quality of Al2O3/4H-SiC interface for device applications
M Usman, SS Suvanam, MK Linnarsson, A HallÚn
Materials Science in Semiconductor Processing 81, 118-121, 2018
Si‐nanoparticle synthesis using ion implantation and MeV ion irradiation
T Chulapakorn, I Sychugov, SS Suvanam, J Linnros, M Wolff, ...
physica status solidi (c) 12 (12), 1301-1305, 2015
Influence of swift heavy ion irradiation on the photoluminescence of Si-nanoparticles and defects in SiO2
T Chulapakorn, I Sychugov, SS Suvanam, J Linnros, D Primetzhofer, ...
Nanotechnology 28 (37), 375603, 2017
Radiation hardness of 4H-SiC devices and circuits
SS Suvanam
KTH Royal Institute of Technology, 2017
Interface between Al2O3 and 4H-SiC investigated by time-of-flight medium energy ion scattering
MK Linnarsson, A HallÚn, S Khartsev, SS Suvanam, M Usman
Journal of Physics D: Applied Physics 50 (49), 495111, 2017
Interface analysis of p-type 4H-SiC/Al2O3 using synchrotron-based XPS
SS Suvanam, MG Yazdi, M Usman, M G÷telid, A HallÚn
Materials Science Forum 858, 693-696, 2016
A comparison of free carrier absorption and capacitance voltage methods for interface trap measurements
SS Suvanam, M Usman, K Gulbinas, V Grivickas, A HallÚn
Materials Science Forum 740, 465-468, 2013
Ion-beam based characterization of TiN back contact interlayers for CZTS (e) thin film solar cells
V Paneta, S Englund, S Suvanam, J Scragg, C Platzer-Bj÷rkman, ...
Nuclear Instruments and Methods in Physics Research Section B: Beamá…, 2019
Characterization of LaxHfyO gate dielectrics in 4H-SiC MOS capacitor
JH Xia, DM Martin, SS Suvanam, CM Zetterling, M Ístling
Materials Science Forum 778, 549-552, 2014
Radiation hardness for silicon oxide and aluminum oxide on 4H-SiC
A HallÚn, SS Suvanam
Materials Science Forum 924, 229-232, 2018
MeV ion irradiation effects on the luminescence properties of Si‐implanted SiO2‐thin films
T Chulapakorn, I Sychugov, SS Suvanam, J Linnros, D Primetzhofer, ...
physica status solidi (c) 13 (10‐12), 921-926, 2016
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