| Zirconium complexes of symmetric and of chiral diketiminate ligands: synthesis, crystal structures, and reactivities I El-Zoghbi, S Latreche, F Schaper Organometallics 29 (7), 1551-1559, 2010 | 37 | 2010 |
| Channel length scaling and the impact of metal gate work function on the performance of double gate-metal oxide semiconductor field-effect transistors D Rechem, S Latreche, C Gontrand Pramana 72, 587-599, 2009 | 28 | 2009 |
| Compact drain-current model for undoped cylindrical surrounding-gate metal-oxide-semiconductor field effect transistors including short channel effects B Smaani, S Latreche, B Iñiguez Journal of Applied Physics 114 (22), 2013 | 20 | 2013 |
| Chromium (III) bis (diketiminate) complexes S Latreche, F Schaper Organometallics 29 (9), 2180-2185, 2010 | 20 | 2010 |
| The effect of short channel on nanoscale SOI MOSFETs D Rechem, S Latreche The African Review of Physics 2 (3), 2009 | 16 | 2009 |
| Photonic band gap grating in He+-implanted lithium niobate waveguides MR Beghoul, B Fougère, A Boudrioua, C Darraud, S Latreche, R Kremer, ... Optical and quantum electronics 39, 333-340, 2007 | 15 | 2007 |
| Design and first characterization of active and slim-edge planar detectors for FEL applications MA Benkechkache, S Latreche, S Ronchin, M Boscardin, L Pancheri, ... IEEE Transactions on Nuclear Science 64 (4), 1062-1070, 2017 | 14 | 2017 |
| Highly symmetrical chromium (II) bisdiketiminate complexes S Latreche, F Schaper Inorganica Chimica Acta 365 (1), 49-53, 2011 | 13 | 2011 |
| 1, 3-Bis (2-fluorophenyl)-5-propyl-1, 3, 5-triazacyclohexane S Latreche, A Bouchemma, S Bouacida, M Bouhenguel, A Mousser Acta Crystallographica Section E: Structure Reports Online 62 (10), o4676-o4678, 2006 | 13 | 2006 |
| 3, 5-Bis (4-fluorophenyl)-1-propyl-1, 3, 5-triazacyclohexane S Latreche, A Bouchemma, S Bouacida, M Bouhenguel, A Mousser Acta Crystallographica Section E: Structure Reports Online 62 (10), o4674-o4675, 2006 | 12 | 2006 |
| 3, 5-Bis (2-fluorophenyl)-1-isopropyl-1, 3, 5-triazacyclohexane S Latreche, A Bouchemma, S Bouacida, H Mousser, A Mousser Acta Crystallographica Section E: Structure Reports Online 62 (11), o4960-o4962, 2006 | 10 | 2006 |
| Design and TCAD simulations of planar active-edge pixel sensors for future XFEL applications GF Dalla Betta, G Batignani, MEA Benkechkache, S Bettarini, G Casarosa, ... 2014 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC …, 2014 | 9 | 2014 |
| Mathematical approach and optimisation of nanometric base thickness for a SiGeC HBT dedicated to radiofrequency applications M Lakhdara, S Latreche, C Gontrand Journal of computational and applied mathematics 259, 925-936, 2014 | 8 | 2014 |
| In-pixel conversion with a 10 bit SAR ADC for next generation X-ray FELs L Lodola, G Batignani, MA Benkechkache, S Bettarini, G Casarosa, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2016 | 7 | 2016 |
| Design and TCAD simulation of planar p-on-n active-edge pixel sensors for the next generation of FELs GF Dalla Betta, G Batignani, MA Benkechkache, S Bettarini, G Casarosa, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2016 | 7 | 2016 |
| First-and second-order electrical modelling and experiment on very high speed SiGeC heterojunction bipolar transistors JC Nunez-Perez, M Lakhdara, M Bouhouche, J Verdier, S Latreche, ... Semiconductor science and Technology 24 (4), 045010, 2009 | 7 | 2009 |
| Nanotube diameter effect on the CNTFET performances D Rechem, S Latreche 5th International Conference: Sciences of Electronic, Technologies of …, 2009 | 7 | 2009 |
| Improvement of the self-heating performance of an advanced SiGe HBT transistor through the Peltier effect A Boulgheb, M Lakhdara, S Latreche IEEE Transactions On Electron Devices 68 (2), 479-484, 2021 | 6 | 2021 |
| Combined electromagnetic and drift diffusion models for microwave semiconductor device S Labiod, S Latreche, M Bella, C Gontrand Journal of Electromagnetic Analysis and Applications 2011, 2011 | 6 | 2011 |
| Modelling of parasitic effects induced by electrically active defects in a SiGe HBT M Lakhdara, S Latreche, C Gontrand The European Physical Journal-Applied Physics 43 (1), 55-63, 2008 | 6 | 2008 |
