Filippo Guagliardo
Filippo Guagliardo
Verified email at mail.polimi.it
Title
Cited by
Cited by
Year
Anderson–Mott transition in arrays of a few dopant atoms in a silicon transistor
E Prati, M Hori, F Guagliardo, G Ferrari, T Shinada
Nature nanotechnology 7 (7), 443, 2012
912012
ZeptoFarad capacitance detection with a miniaturized CMOS current front-end for nanoscale sensors
M Carminati, G Ferrari, F Guagliardo, M Sampietro
Sensors and Actuators A: Physical 172 (1), 117-123, 2011
562011
Ultra-low-noise CMOS current preamplifier from DC to 1 MHz
G Ferrari, M Farina, F Guagliardo, M Carminati, M Sampietro
Electronics letters 45 (25), 1278-1280, 2009
462009
Charge dynamics of a single donor coupled to a few-electron quantum dot in silicon
G Mazzeo, E Prati, M Belli, G Leti, S Cocco, M Fanciulli, F Guagliardo, ...
Applied Physics Letters 100 (21), 213107, 2012
322012
Quantum transport in deterministically implanted single-donors in Si FETs
T Shinada, M Hori, F Guagliardo, G Ferrari, A Komatubara, K Kumagai, ...
2011 International Electron Devices Meeting, 30.4. 1-30.4. 4, 2011
152011
Low-noise single-chip potentiostat for nano-bio-electrochemistry over a 1MHz bandwidth
M Carminati, G Ferrari, F Guagliardo, M Farina, M Sampietro
2009 16th IEEE International Conference on Electronics, Circuits and Systems …, 2009
62009
Quantum transport property in FETs with deterministically implanted single-arsenic ions using single-ion implantation
M Hori, T Shinada, F Guagliardo, G Ferrari, E Prati
2012 IEEE Silicon Nanoelectronics Workshop (SNW), 1-2, 2012
42012
Low-noise current measurements on quantum devices operating at cryogenic temperature
F Guagliardo, G Ferrari, E Prati, T Shinada
Single Atom Nanoelectronics, 187-210, 2013
22013
Low-noise current measurements on quantum devices operating at cryogenic temperature
F Guagliardo, G Ferrari, E Prati, T Shinada
Single Atom Nanoelectronics, 187-210, 2013
22013
Cryogenic electronic circuits operating at 1 Kelvin for characterization of quantum devices
F Guagliardo
Italy, 2012
12012
ZeptoFarad resolution CMOS read-out circuit for nanosensors
M Carminati, G Ferrari, F Guagliardo, M Sampietro
Procedia Engineering 5, 1123-1126, 2010
12010
Single Atom Imaging—Dopant Atoms in Silicon-Based Semiconductor Devices—by Atom Probe Tomography
K Inoue, Y Nagai
Single-Atom Nanoelectronics, 163-198, 2016
2016
Spin blockade in a triple silicon quantum dot in CMOS technology
E Prati, G Petretto, M Belli, G Mazzeo, S Cocco, M De Michielis, ...
Bulletin of the American Physical Society 57, 2012
2012
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Articles 1–13