| Process technology for silicon carbide devices CM Zetterling Iet, 2002 | 287 | 2002 |
| SiC power devices—Present status, applications and future perspective M Östling, R Ghandi, CM Zetterling 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and …, 2011 | 265 | 2011 |
| Inductively coupled plasma etching of bulk 6H-SiC and thin-film SiCN in chemistries JJ Wang, ES Lambers, SJ Pearton, M Ostling, CM Zetterling, JM Grow, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16 (4 …, 1998 | 162 | 1998 |
| 500Bipolar Integrated OR/NOR Gate in 4H-SiC L Lanni, BG Malm, M Östling, CM Zetterling IEEE Electron Device Letters 34 (9), 1091-1093, 2013 | 113 | 2013 |
| Ohmic contact properties of magnetron sputtered Ti3SiC2 on n-and p-type 4H-silicon carbide K Buchholt, R Ghandi, M Domeij, CM Zetterling, J Lu, P Eklund, L Hultman, ... Applied physics letters 98 (4), 2011 | 96 | 2011 |
| Investigation of aluminum nitride grown by metal–organic chemical-vapor deposition on silicon carbide CM Zetterling, M Östling, K Wongchotigul, MG Spencer, X Tang, CI Harris, ... Journal of applied physics 82 (6), 2990-2995, 1997 | 95 | 1997 |
| A monolithic, 500 C operational amplifier in 4H-SiC bipolar technology R Hedayati, L Lanni, S Rodriguez, BG Malm, A Rusu, CM Zetterling IEEE Electron Device Letters 35 (7), 693-695, 2014 | 92 | 2014 |
| High-voltage 4H-SiC PiN diodes with etched junction termination extension R Ghandi, B Buono, M Domeij, G Malm, CM Zetterling, M Ostling IEEE Electron Device Letters 30 (11), 1170-1172, 2009 | 83 | 2009 |
| Reduction of the Schottky barrier height on silicon carbide using Au nano-particles SK Lee, CM Zetterling, M Östling, I Åberg, MH Magnusson, K Deppert, ... Solid-State Electronics 46 (9), 1433-1440, 2002 | 83 | 2002 |
| Surface-passivation effects on the performance of 4H-SiC BJTs R Ghandi, B Buono, M Domeij, R Esteve, A Schöner, J Han, S Dimitrijev, ... IEEE Transactions on Electron Devices 58 (1), 259-265, 2010 | 82 | 2010 |
| Low resistivity ohmic titanium carbide contacts to n-and p-type 4H-silicon carbide SK Lee, CM Zetterling, M Östling, JP Palmquist, H Högberg, U Jansson Solid-State Electronics 44 (7), 1179-1186, 2000 | 82 | 2000 |
| Ultradeep, low-damage dry etching of SiC H Cho, P Leerungnawarat, DC Hays, SJ Pearton, SNG Chu, RM Strong, ... Applied Physics Letters 76 (6), 739-741, 2000 | 79 | 2000 |
| Geometrical effects in high current gain 1100-V 4H-SiC BJTs M Domeij, HS Lee, E Danielsson, CM Zetterling, M Ostling, A Schoner IEEE electron device letters 26 (10), 743-745, 2005 | 78 | 2005 |
| Modeling and characterization of current gain versus temperature in 4H-SiC power BJTs B Buono, R Ghandi, M Domeij, BG Malm, CM Zetterling, M Ostling IEEE Transactions on Electron Devices 57 (3), 704-711, 2010 | 77 | 2010 |
| 1200-V 5.2-4H-SiC BJTs With a High Common-Emitter Current Gain HS Lee, M Domeij, CM Zetterling, M Ostling, F Allerstam, ... IEEE Electron Device Letters 28 (11), 1007-1009, 2007 | 76 | 2007 |
| ICP etching of SiC JJ Wang, ES Lambers, SJ Pearton, M Ostling, CM Zetterling, JM Grow, ... Solid-State Electronics 42 (12), 2283-2288, 1998 | 69 | 1998 |
| Design and characterization of high-temperature ECL-based bipolar integrated circuits in 4H-SiC L Lanni, R Ghandi, BG Malm, CM Zetterling, M Ostling IEEE Transactions on Electron Devices 59 (4), 1076-1083, 2012 | 68 | 2012 |
| 2.8 kV, forward drop JBS diode with low leakage F Dahlquist, JO Svedberg, CM Zetterling, M Östling, B Breitholtz, ... Materials Science Forum 338, 1179-1182, 2000 | 63 | 2000 |
| Via-hole etching for SiC P Leerungnawarat, DC Hays, H Cho, SJ Pearton, RM Strong, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1999 | 62 | 1999 |
| High density plasma via hole etching in SiC H Cho, KP Lee, P Leerungnawarat, SNG Chu, F Ren, SJ Pearton, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 19 (4 …, 2001 | 61 | 2001 |
Mikael ÖstlingKTH Royal Institute of TechnologyVerified email at kth.se
