| 7.1 A 1/4-inch 8Mpixel CMOS image sensor with 3D backside-illuminated 1.12 μm pixel with front-side deep-trench isolation and vertical transfer gate JC Ahn, K Lee, Y Kim, H Jeong, B Kim, H Kim, J Park, T Jung, W Park, ... 2014 IEEE International Solid-State Circuits Conference Digest of Technical …, 2014 | 74 | 2014 |
| Nano-electromechanical switch based on a physical unclonable function for highly robust and stable performance in harsh environments KM Hwang, JY Park, H Bae, SW Lee, CK Kim, M Seo, H Im, DH Kim, ... ACS nano 11 (12), 12547-12552, 2017 | 37 | 2017 |
| A 0.8 µm smart dual conversion gain pixel for 64 Megapixels CMOS image sensor with 12k e-full-well capacitance and low dark noise D Park, SW Lee, J Han, D Jang, H Kwon, S Cha, M Kim, H Lee, S Suh, ... 2019 IEEE International Electron Devices Meeting (IEDM), 16.2. 1-16.2. 4, 2019 | 32 | 2019 |
| A comparative study on hot-carrier injection in 5-story vertically integrated inversion-mode and junctionless-mode gate-all-around MOSFETs SY Kim, BH Lee, J Hur, JY Park, SB Jeon, SW Lee, YK Choi IEEE Electron Device Letters 39 (1), 4-7, 2017 | 23 | 2017 |
| Quantitative Analysis of Deuterium Annealing Effect on Poly-Si TFTs by Low Frequency Noise and DC – Characterization DH Kim, SK Lim, H Bae, CK Kim, SW Lee, M Seo, SY Kim, KM Hwang, ... IEEE Transactions on Electron Devices 65 (4), 1640-1644, 2018 | 15 | 2018 |
| Self-powered data erasing of nanoscale flash memory by triboelectricity IK Jin, JY Park, BH Lee, SB Jeon, IW Tcho, SJ Park, WG Kim, JK Han, ... Nano energy 52, 63-70, 2018 | 13 | 2018 |
| A comprehensive study of a single-transistor latch in vertical pillar-type FETs with asymmetric source and drain SW Lee, SY Kim, KM Hwang, IK Jin, J Hur, DH Kim, JW Son, WK Kim, ... IEEE Transactions on Electron Devices 65 (11), 5208-5212, 2018 | 11 | 2018 |
| Multilevel States of Nano‐Electromechanical Switch for a PUF‐Based Security Device KM Hwang, WK Kim, IK Jin, SW Lee, YK Choi Small 15 (3), 1803825, 2019 | 10 | 2019 |
| A study of high-temperature effects on an asymmetrically doped vertical pillar-type field-effect transistor JK Han, J Hur, WK Kim, JY Park, SW Lee, SY Kim, JM Yu, YK Choi IEEE Transactions on Nanotechnology 19, 52-55, 2019 | 9 | 2019 |
| 0.8㎛-pitch CMOS Image Sensor with Dual Conversion Gain Pixel for Mobile Applications D Jang, D Park, S Cha, H Kwon, M Kim, S Lee, H Lee, S Kim, N Lee, ... IISW, 2019 | 8 | 2019 |
| Comprehensive study on the relation between low-frequency noise and asymmetric parasitic resistances in a vertical pillar-type FET SW Lee, T Bang, CK Kim, KM Hwang, BC Jang, DI Moon, H Bae, M Seo, ... IEEE Electron Device Letters 38 (8), 1008-1011, 2017 | 8 | 2017 |
| A Low-Voltage 0.7 µm Pixel with 6000 e-Full-Well Capacity for a Low-Power CMOS Image Sensor SW Lee, S Cha, D Jang, M Kim, H Lee, N Lee, S Kim, K Oh, D Lee, ... Electronic Imaging 33, 1-6, 2021 | 1 | 2021 |
| Image sensors S Lee US Patent US20220336506A1, 2022 | | 2022 |
| A Comprehensive Study of Ion-Implantation Damage on Source Follower in a Vertically Stacked Nanowire Field-Effect Transistor YKC Seung-Wook Lee, Seong-Yeon Kim, Byung-Hyun Lee International Conference on Electronics, Information, and Communication (ICEIC), 2018 | | 2018 |
| A Study of Hot-Carrier Injection Influenced by Doping Concentration in a Junctionless-mode Gate-All-Around Field Effect Transistor with 5-story Vertically Integrated Nanowires SY Kim, SW Lee, M Seo, DH Kim, CK Kim, H Bae, BH Lee, YK Choi International Conference on Electronics, Information, and Communication, 2018 | | 2018 |
| A Novel Source Follower based on a Vertically Multiple Stacked Junctionless Nanowire Field Effect Transistor YKC Seung-Wook Lee, Byung-Hyun Lee European MRS Fall Meeting, 2017 | | 2017 |
| CMOS image sensor for reducing dead zone SW Lee, YT Kim, JE Park, JC Ahn, KH Lee, TH Lee, HG Jeong US Patent US9608024B2, 2017 | | 2017 |
| Unit pixels for image sensors and pixel arrays comprising the same S Lee, Y Kim, JC Ahn, YW Jung US Patent US9609250B2, 2017 | | 2017 |
| Complementary metal-oxide-semiconductor image sensors S Lee, J Ahn, Y Jung US Patent US9508771B2, 2016 | | 2016 |
