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Seung-Jun Bae
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Year
A 3.2 Gbps/pin 8 Gbit 1.0 V LPDDR4 SDRAM with integrated ECC engine for sub-1 V DRAM core operation
TY Oh, H Chung, JY Park, KW Lee, S Oh, SY Doo, HJ Kim, CY Lee, ...
IEEE Journal of Solid-State Circuits 50 (1), 178-190, 2014
1132014
Memory system having multi-terminated multi-drop bus
HJ Park, SJ Bae
US Patent 7,274,583, 2007
982007
An 80 nm 4 Gb/s/pin 32 bit 512 Mb GDDR4 graphics DRAM with low power and low noise data bus inversion
SJ Bae, KI Park, JD Ihm, HY Song, WJ Lee, HJ Kim, KH Kim, YS Park, ...
IEEE journal of solid-state circuits 43 (1), 121-131, 2008
812008
Majority voter circuits and semiconductor device including the same
SJ Bae, JD Lim, GS Moon, KII Park
US Patent App. 12/656,590, 2010
692010
A 60nm 6Gb/s/pin GDDR5 graphics DRAM with multifaceted clocking and ISI/SSN-reduction techniques
SJ Bae, YS Sohn, KI Park, KH Kim, DH Chung, JG Kim, SH Kim, MS Park, ...
2008 IEEE International Solid-State Circuits Conference-Digest of Technical …, 2008
602008
A 2.2 Gbps CMOS look-ahead DFE receiver for multidrop channel with pin-to-pin time skew compensation
YS Sohn, SJ Bae, HJ Park, CH Kim, SI Cho
Proceedings of the IEEE 2003 Custom Integrated Circuits Conference, 2003 …, 2003
552003
Single ended pseudo differential interconnection circuit and single ended pseudo differential signaling method
SJ Bae
US Patent 7,868,790, 2011
502011
A 16-Gb, 18-Gb/s/pin GDDR6 DRAM with per-bit trainable single-ended DFE and PLL-less clocking
YJ Kim, HJ Kwon, SY Doo, M Ahn, YH Kim, YJ Lee, DS Kang, SG Do, ...
IEEE Journal of Solid-State Circuits 54 (1), 197-209, 2018
482018
On-die termination circuit, data output buffer and semiconductor memory device
HS Seol, YS Sohn, DM Kim, JI Lee, KI Park, SJ Bae, S Kwak
US Patent 8,531,898, 2013
462013
Digital duty cycle correction circuit and method for multi-phase clock
HJ Park, YC Jang, SJ Bae
US Patent 6,958,639, 2005
442005
AC-coupling phase interpolator and delay-locked loop using the same
JG Kim, KII Park, SJ Bae, SH Kim, DH Chung
US Patent 8,004,328, 2011
422011
Latency control circuit and semiconductor memory device comprising same
SH Kim, SJ Bae, HR Kim, HS Seol
US Patent App. 13/743,412, 2013
412013
A 3Gb/s 8b single-ended transceiver for 4-drop DRAM interface with digital calibration of equalization skew and offset coefficients
SJ Bae, HJ Chi, HR Kim, HJ Park
ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State …, 2005
412005
A 40nm 2Gb 7Gb/s/pin GDDR5 SDRAM with a programmable DQ ordering crosstalk equalizer and adjustable clock-tracking BW
SJ Bae, YS Sohn, TY Oh, SH Kim, YS Yang, DH Kim, SH Kwak, HS Seol, ...
2011 IEEE international solid-state circuits conference, 498-500, 2011
392011
Majority voter circuits and semiconductor devices including the same
SJ Bae, JD Lim, GS Moon, KI Park
US Patent 7,688,102, 2010
392010
A VCDL-based 60-760-MHz dual-loop DLL with infinite phase-shift capability and adaptive-bandwidth scheme
SJ Bae, HJ Chi, YS Sohn, HJ Park
IEEE journal of solid-state circuits 40 (5), 1119-1129, 2005
392005
Data output buffer and memory device
SH Kim, SJ Bae, JI Lee, KI Park
US Patent 8,553,471, 2013
372013
A single-loop SS-LMS algorithm with single-ended integrating DFE receiver for multi-drop DRAM interface
HJ Chi, JS Lee, SH Jeon, SJ Bae, YS Sohn, JY Sim, HJ Park
IEEE journal of solid-state circuits 46 (9), 2053-2063, 2011
362011
Memory system and method
SJ Bae, KI Park, YS Sohn, YH Jun, JS Choi, TY Oh
US Patent App. 13/078,364, 2011
342011
Low power balance code using data bus inversion
SJ Bae
US Patent 7,495,587, 2009
342009
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