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Sevim Korkmaz
Sevim Korkmaz
Graduate Student
Verified email at clarkson.edu
Title
Cited by
Cited by
Year
Enzyme-based logic analysis of biomarkers at physiological concentrations: AND gate with double-sigmoid “filter” response
J Halámek, O Zavalov, L Halámková, S Korkmaz, V Privman, E Katz
The Journal of Physical Chemistry B 116 (15), 4457-4464, 2012
532012
Through-Cobalt Self Forming Barrier (tCoSFB) for Cu/ULK BEOL: A novel concept for advanced technology nodes
T Nogami, BD Briggs, S Korkmaz, M Chae, C Penny, J Li, W Wang, ...
2015 IEEE International Electron Devices Meeting (IEDM), 8.1. 1-8.1. 4, 2015
232015
Ceria-based slurries for non-prestonian removal of silicon dioxide films
S Korkmaz, SV Babu
ECS Journal of Solid State Science and Technology 4 (2), P36, 2014
222014
Two-input enzymatic logic gates made sigmoid by modifications of the biocatalytic reaction cascades
O Zavalov, V Bocharova, J Halamek, L Halámková, S Korkmaz, ...
arXiv preprint arXiv:1305.5929, 2013
182013
Light scattering model for individual sub-100-nm particle size determination in an evanescent field
P Khajornrungruang, S Korkmaz, P Angshuman, K Suzuki, K Kimura, ...
Japanese Journal of Applied Physics 55 (6S3), 06JG02, 2016
152016
AFM-based study of the interaction forces between ceria, silicon dioxide and polyurethane pad during non-Prestonian polishing of silicon dioxide films
S Korkmaz, AS Vahdat, O Trotsenko, S Minko, SV Babu
ECS Journal of Solid State Science and Technology 4 (11), P5016, 2015
152015
Reactive liquids for non–prestonian chemical mechanical polishing of polysilicon films
URK Lagudu, S Korkmaz, A Gowda, NK Penta, SV Babu
ECS Journal of Solid State Science and Technology 8 (5), P3040, 2019
72019
Non-prestonian RRs of poly-Si and SiO2 films and effect of residual stress on RRs of various types of SiO2 and Si3N4 films: a dissertation
S Korkmaz
Clarkson University, 2017
12017
Over-sculpted storage node
DD Shreeram, S Sapra, K Li, S Korkmaz
US Patent App. 17/944,649, 2024
2024
Capacitors with electrodes having a portion of material removed, and related semiconductor devices, systems, and methods
DD Shreeram, K Li, MN Rocklein, WC Huang, PC Hsu, S Korkmaz, ...
US Patent App. 17/647,902, 2022
2022
Semiconductor processing applying supercritical drying
S Korkmaz, S Sapra, JA Imonigie, AS Vahdat
US Patent 11,127,588, 2021
2021
Semiconductor structure patterning
S Korkmaz, DD Shreeram, S Balakrishnan, D Ray, S Sapra, PA Paduano
US Patent 11,011,521, 2021
2021
Oxidative trim
MN Rocklein, AJB Cheng, FD Fishburn, S Korkmaz, PA Paduano
US Patent 10,985,239, 2021
2021
Formation of a capacitor using a sacrificial layer
DD Shreeram, S Korkmaz, J Li, S Sapra, D Ray
US Patent 10,964,475, 2021
2021
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