Hagyoul Bae
TitleCited byYear
Direct observation of a carbon filament in water-resistant organic memory
BH Lee, H Bae, H Seong, DI Lee, H Park, YJ Choi, SG Im, SO Kim, ...
ACS nano 9 (7), 7306-7313, 2015
292015
Extraction of Separated Source and Drain Resistances in Amorphous Indium–Gallium–Zinc Oxide TFTs Through Characterization
H Bae, S Kim, M Bae, JS Shin, D Kong, H Jung, J Jang, J Lee, DH Kim, ...
IEEE Electron Device Letters 32 (6), 761-763, 2011
272011
Modified conductance method for extraction of subgap density of states in a-IGZO thin-film transistors
H Bae, S Jun, CH Jo, H Choi, J Lee, YH Kim, S Hwang, HK Jeong, I Hur, ...
IEEE Electron Device Letters 33 (8), 1138-1140, 2012
232012
Single-scan monochromatic photonic capacitance-voltage technique for extraction of subgap DOS over the bandgap in amorphous semiconductor TFTs
H Bae, H Choi, S Jun, C Jo, YH Kim, JS Hwang, J Ahn, S Oh, JU Bae, ...
IEEE Electron Device Letters 34 (12), 1524-1526, 2013
222013
Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric
D Lee, J Yoon, J Lee, BH Lee, ML Seol, H Bae, SB Jeon, H Seong, SG Im, ...
Scientific reports 6, 26121, 2016
212016
Self-curable gate-all-around MOSFETs using electrical annealing to repair degradation induced from hot-carrier injection
JY Park, DI Moon, ML Seol, CK Kim, CH Jeon, H Bae, T Bang, YK Choi
IEEE Transactions on Electron Devices 63 (3), 910-915, 2016
152016
Characterization of density-of-states and parasitic resistance in a-InGaZnO thin-film transistors after negative bias stress
C Jo, S Jun, W Kim, I Hur, H Bae, SJ Choi, D Hwan Kim, D Myong Kim
Applied Physics Letters 102 (14), 143502, 2013
152013
Separate extraction of source, drain, and substrate resistances in MOSFETs with parasitic junction current method
H Bae, SC Baek, S Lee, J Jang, JS Shin, D Yun, H Kim, DH Kim, DM Kim
IEEE Electron Device Letters 31 (11), 1190-1192, 2010
152010
Foldable and disposable memory on paper
BH Lee, DI Lee, H Bae, H Seong, SB Jeon, ML Seol, JW Han, ...
Scientific reports 6, 38389, 2016
142016
Physically transient memory on a rapidly dissoluble paper for security application
H Bae, BH Lee, D Lee, ML Seol, D Kim, JW Han, CK Kim, SB Jeon, D Ahn, ...
Scientific reports 6, 38324, 2016
142016
Dual-sweep combinational transconductance technique for separate extraction of parasitic resistances in amorphous thin-film transistors
S Jun, H Bae, H Kim, J Lee, SJ Choi, DH Kim, DM Kim
IEEE Electron Device Letters 36 (2), 144-146, 2015
132015
Unified subthreshold coupling factor technique for surface potential and subgap density-of-states in amorphous thin film transistors
S Jun, C Jo, H Bae, H Choi, DH Kim, DM Kim
IEEE Electron Device Letters 34 (5), 641-643, 2013
132013
Surface-Potential-Based Analytic DC Model With Effective Electron Density for -IGZO TFTs Considering the Parasitic Resistance
JH Park, Y Kim, S Kim, H Bae, DH Kim, DM Kim
IEEE Electron Device Letters 32 (11), 1540-1542, 2011
122011
Functional circuitry on commercial fabric via textile-compatible nanoscale film coating process for fibertronics
H Bae, BC Jang, H Park, SH Jung, HM Lee, JY Park, SB Jeon, G Son, ...
Nano letters 17 (10), 6443-6452, 2017
112017
Extraction Technique for Intrinsic Subgap DOS in a-IGZO TFTs by De-Embedding the Parasitic Capacitance Through the Photonic Measurement
H Bae, H Choi, S Oh, DH Kim, J Bae, J Kim, YH Kim, DM Kim
IEEE Electron Device Letters 34 (1), 57-59, 2013
112013
A novel double HBT-based capacitorless 1T DRAM cell with Si/SiGe heterojunctions
JS Shin, H Bae, J Jang, D Yun, J Lee, E Hong, DH Kim, DM Kim
IEEE Electron Device Letters 32 (7), 850-852, 2011
102011
Modeling and separate extraction of gate-bias-and channel-length-dependent intrinsic and extrinsic source–drain resistances in MOSFETs
H Bae, J Jang, JS Shin, D Yun, J Lee, TW Kim, DH Kim, DM Kim
IEEE Electron Device Letters 32 (6), 722-724, 2011
102011
Fully current-based sub-bandgap optoelectronic differential ideality factor technique and extraction of subgap DOS in amorphous semiconductor TFTs
H Bae, H Seo, S Jun, H Choi, J Ahn, J Hwang, J Lee, S Oh, JU Bae, ...
IEEE Transactions on Electron Devices 61 (10), 3566-3569, 2014
92014
Vertical-Gate Si/SiGe Double-HBT-Based Capacitorless 1 T DRAM Cell for Extended Retention Time at Low Latch Voltage
JS Shin, H Choi, H Bae, J Jang, D Yun, E Hong, DH Kim, DM Kim
IEEE Electron Device Letters 33 (2), 134-136, 2012
92012
A novel capacitorless DRAM cell using superlattice bandgap-engineered (SBE) structure with 30-nm channel length
S Lee, JS Shin, J Jang, H Bae, D Yun, J Lee, DH Kim, DM Kim
IEEE Transactions on Nanotechnology 10 (5), 1023-1030, 2011
92011
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