Robert F. Karlicek, Jr.
Cited by
Cited by
Toward smart and ultra‐efficient solid‐state lighting
JY Tsao, MH Crawford, ME Coltrin, AJ Fischer, DD Koleske, ...
Advanced Optical Materials 2 (9), 809-836, 2014
A modified pulsed gradient technique for measuring diffusion in the presence of large background gradients
RF Karlicek Jr, IJ Lowe
Journal of Magnetic Resonance (1969) 37 (1), 75-91, 1980
Inductively coupled plasma etching of GaN
RJ Shul, GB McClellan, SA Casalnuovo, DJ Rieger, SJ Pearton, ...
Applied physics letters 69 (8), 1119-1121, 1996
Thermal management for LED applications
CJM Lasance, A Poppe
Springer, 2014
Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy
CA Tran, A Osinski, RF Karlicek Jr, I Berishev
Applied physics letters 75 (11), 1494-1496, 1999
Mechanism of hydrogen absorption by lanthanum-nickel (LaNi5)
WE Wallace, RF Karlicek, H Imamura
Journal of Physical Chemistry 83 (13), 1708-1712, 1979
III-Nitride based light emitting diodes and applications
TY Seong, J Han, H Amano, H Morkoç
Springer Netherlands, 2013
Competition between band gap and yellow luminescence in GaN and its relevance for optoelectronic devices
W Grieshaber, EF Schubert, ID Goepfert, RF Karlicek Jr, MJ Schurman, ...
Journal of Applied Physics 80 (8), 4615-4620, 1996
Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures
A Billeb, W Grieshaber, D Stocker, EF Schubert, RF Karlicek Jr
Applied physics letters 70 (21), 2790-2792, 1997
Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in …
Z Li, J Waldron, T Detchprohm, C Wetzel, RF Karlicek, TP Chow
Applied Physics Letters 102 (19), 2013
Electrical and structural analysis of high-dose Si implantation in GaN
JC Zolper, HH Tan, JS Williams, J Zou, DJH Cockayne, SJ Pearton, ...
Applied physics letters 70 (20), 2729-2731, 1997
Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to -type GaN
BP Luther, JM DeLucca, SE Mohney, RF Karlicek Jr
Applied physics letters 71 (26), 3859-3861, 1997
Tiled illumination assembly and related methods
AA Erchak, RF Karlicek, D Doyle, G Taraschi, MA Joffe, C Hoepfner
US Patent 8,092,064, 2012
Method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes
DZ Garbuzov, JC Connolly, RF Karlicek Jr, IT Ferguson
US Patent 6,404,125, 2002
Time-resolved photoluminescence measurements of InGaN light-emitting diodes
M Pophristic, FH Long, C Tran, IT Ferguson, RF Karlicek Jr
Applied Physics Letters 73 (24), 3550-3552, 1998
GaN LED with solderable backside metal
SR Gibb, RF Karlicek, PK Mukerji, HS Venugopalan, I Eliashevich
US Patent 7,190,005, 2007
Laser‐induced metal deposition on InP
GJC R. F. Karlicek, V. M. Donnelly
Journal of Applied Physics 53, 1084, 1982
Wavelength-converting light-emitting devices
AA Erchak, M Lim, E Lidorikis, JA Venezia, MG Brown, RF Karlicek Jr
US Patent 7,196,354, 2007
Wavelength-converting light-emitting devices
J Alexei A. Erchak, Michael Lim, Elefterios Lidorikis, Jo A. Venezia ...
US Patent 7,196,354, 2007
Semiconductor device separation using a patterned laser projection
M Gottfried, MG Brown, I Eliashevich, RF Karlicek Jr, JE Nering
US Patent 6,902,990, 2005
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