| Toward smart and ultra‐efficient solid‐state lighting JY Tsao, MH Crawford, ME Coltrin, AJ Fischer, DD Koleske, ... Advanced Optical Materials 2 (9), 809-836, 2014 | 393 | 2014 |
| A modified pulsed gradient technique for measuring diffusion in the presence of large background gradients RF Karlicek Jr, IJ Lowe Journal of Magnetic Resonance (1969) 37 (1), 75-91, 1980 | 360 | 1980 |
| Inductively coupled plasma etching of GaN RJ Shul, GB McClellan, SA Casalnuovo, DJ Rieger, SJ Pearton, ... Applied physics letters 69 (8), 1119-1121, 1996 | 300 | 1996 |
| Thermal management for LED applications CJM Lasance, A Poppe Springer, 2014 | 264 | 2014 |
| Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy CA Tran, A Osinski, RF Karlicek, I Berishev Applied physics letters 75 (11), 1494-1496, 1999 | 226 | 1999 |
| Mechanism of hydrogen absorption by lanthanum-nickel (LaNi5) WE Wallace, RF Karlicek, H Imamura Journal of Physical Chemistry 83 (13), 1708-1712, 1979 | 199 | 1979 |
| III-Nitride based light emitting diodes and applications TY Seong, J Han, H Amano, H Morkoç Springer, 2017 | 198 | 2017 |
| Competition between band gap and yellow luminescence in GaN and its relevance for optoelectronic devices W Grieshaber, EF Schubert, ID Goepfert, RF Karlicek Jr, MJ Schurman, ... Journal of Applied Physics 80 (8), 4615-4620, 1996 | 176 | 1996 |
| Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures A Billeb, W Grieshaber, D Stocker, EF Schubert, RF Karlicek Jr Applied physics letters 70 (21), 2790-2792, 1997 | 150 | 1997 |
| Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in … Z Li, J Waldron, T Detchprohm, C Wetzel, RF Karlicek, TP Chow Applied Physics Letters 102 (19), 2013 | 147 | 2013 |
| Electrical and structural analysis of high-dose Si implantation in GaN JC Zolper, HH Tan, JS Williams, J Zou, DJH Cockayne, SJ Pearton, ... Applied physics letters 70 (20), 2729-2731, 1997 | 135 | 1997 |
| Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to -type GaN BP Luther, JM DeLucca, SE Mohney, RF Karlicek Jr Applied physics letters 71 (26), 3859-3861, 1997 | 133 | 1997 |
| Tiled illumination assembly and related methods AA Erchak, RF Karlicek, D Doyle, G Taraschi, MA Joffe, C Hoepfner US Patent 8,092,064, 2012 | 125 | 2012 |
| Method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes DZ Garbuzov, JC Connolly, RF Karlicek Jr, IT Ferguson US Patent 6,404,125, 2002 | 125 | 2002 |
| Time-resolved photoluminescence measurements of InGaN light-emitting diodes M Pophristic, FH Long, C Tran, IT Ferguson, RF Karlicek Jr Applied Physics Letters 73 (24), 3550-3552, 1998 | 118 | 1998 |
| GaN LED with solderable backside metal SR Gibb, RF Karlicek, PK Mukerji, HS Venugopalan, I Eliashevich US Patent 7,190,005, 2007 | 110 | 2007 |
| LED color management and display systems AA Erchak, M Lim, NI Nemchuk, AL Pokrovskiy, RF Karlicek Jr, R Kumar US Patent 7,959,341, 2011 | 99 | 2011 |
| Wavelength-converting light-emitting devices AA Erchak, M Lim, E Lidorikis, JA Venezia, MG Brown, RF Karlicek Jr US Patent 7,196,354, 2007 | 99 | 2007 |
| Wavelength-converting light-emitting devices J Alexei A. Erchak, Michael Lim, Elefterios Lidorikis, Jo A. Venezia ... US Patent 7,196,354, 2007 | 99 | 2007 |
| Semiconductor device separation using a patterned laser projection M Gottfried, MG Brown, I Eliashevich, RF Karlicek Jr, JE Nering US Patent 6,902,990, 2005 | 97 | 2005 |
Ian T. FergusonSouthern Polytechnic College of Engineering and Engineering Technology, Kennesaw State UniversityVerified email at kennesaw.edu
