Huixia Fu
Huixia Fu
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Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2Se
C Chen, M Wang, J Wu, H Fu, H Yang, Z Tian, T Tu, H Peng, Y Sun, X Xu, ...
Science Advances 4 (9), eaat8355, 2018
A native oxide high-κ gate dielectric for two-dimensional electronics
T Li, T Tu, Y Sun, H Fu, J Yu, L Xing, Z Wang, H Wang, R Jia, J Wu, C Tan, ...
Nature Electronics 3 (8), 473-478, 2020
Ordered and reversible hydrogenation of silicene
J Qiu, H Fu, Y Xu, AI Oreshkin, T Shao, H Li, S Meng, L Chen, K Wu
Physical review letters 114 (12), 126101, 2015
Low Residual Carrier Concentration and High Mobility in 2D Semiconducting Bi2O2Se
J Wu, C Qiu, H Fu, S Chen, C Zhang, Z Dou, C Tan, T Tu, T Li, Y Zhang, ...
Nano Letters 19 (1), 197-202, 2018
From silicene to half-silicane by hydrogenation
J Qiu, H Fu, Y Xu, Q Zhou, S Meng, H Li, L Chen, K Wu
ACS nano 9 (11), 11192-11199, 2015
Exchange bias and quantum anomalous Hall effect in the MnBi2Te4/CrI3 heterostructure
H Fu, CX Liu, B Yan
Science advances 6 (10), eaaz0948, 2020
Observation of charge to spin conversion in Weyl semimetal at room temperature
B Zhao, D Khokhriakov, Y Zhang, H Fu, B Karpiak, AM Hoque, X Xu, ...
Physical review research 2 (1), 013286, 2020
Intrinsic valley polarization of magnetic VSe2 monolayers
J Liu, WJ Hou, C Cheng, HX Fu, JT Sun, S Meng
Journal of Physics: Condensed Matter 29 (25), 255501, 2017
Stacking-dependent electronic structure of bilayer silicene
H Fu, J Zhang, Z Ding, H Li, S Meng
Applied Physics Letters 104 (13), 2014
Interlayer‐State‐Coupling Dependent Ultrafast Charge Transfer in MoS2/WS2 Bilayers
J Zhang, H Hong, C Lian, W Ma, X Xu, X Zhou, H Fu, K Liu, S Meng
Advanced science 4 (9), 1700086, 2017
Suppressed superconductivity in substrate-supported β12 borophene by tensile strain and electron doping
C Cheng, JT Sun, H Liu, HX Fu, J Zhang, XR Chen, S Meng
2D Materials 4 (2), 025032, 2017
Large spin-orbit torque efficiency enhanced by magnetic structure of collinear antiferromagnet IrMn
J Zhou, X Wang, Y Liu, J Yu, H Fu, L Liu, S Chen, J Deng, W Lin, X Shu, ...
Science advances 5 (5), eaau6696, 2019
Self-modulation doping effect in the high-mobility layered semiconductor
H Fu, J Wu, H Peng, B Yan
Physical Review B 97 (24), 241203, 2018
Resolving the topological classification of bismuth with topological defects
AK Nayak, J Reiner, R Queiroz, H Fu, C Shekhar, B Yan, C Felser, ...
Science advances 5 (11), eaax6996, 2019
Finite-temperature violation of the anomalous transverse Wiedemann-Franz law
L Xu, X Li, X Lu, C Collignon, H Fu, J Koo, B Fauqué, B Yan, Z Zhu, ...
Science Advances 6 (17), eaaz3522, 2020
Nonlinear Rashba spin splitting in transition metal dichalcogenide monolayers
C Cheng, JT Sun, XR Chen, HX Fu, S Meng
Nanoscale 8 (41), 17854-17860, 2016
New pathway for hot electron relaxation in two-dimensional heterostructures
J Zhang, H Hong, J Zhang, H Fu, P You, J Lischner, K Liu, E Kaxiras, ...
Nano Letters 18 (9), 6057-6063, 2018
Single-crystalline van der Waals layered dielectric with high dielectric constant
C Zhang, T Tu, J Wang, Y Zhu, C Tan, L Chen, M Wu, R Zhu, Y Liu, H Fu, ...
Nature materials 22 (7), 832-837, 2023
Probing nonequilibrium dynamics of photoexcited polarons on a metal-oxide surface with atomic precision
C Guo, X Meng, H Fu, Q Wang, H Wang, Y Tian, J Peng, R Ma, Y Weng, ...
Physical Review Letters 124 (20), 206801, 2020
Two-dimensional ferroelectric topological insulators in functionalized atomically thin bismuth layers
L Kou, H Fu, Y Ma, B Yan, T Liao, A Du, C Chen
Physical Review B 97 (7), 075429, 2018
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