| A comparative study on the impacts of interface traps on tunneling FET and MOSFET Y Qiu, R Wang, Q Huang, R Huang IEEE Transactions on Electron Devices 61 (5), 1284-1291, 2014 | 121 | 2014 |
| First experimental demonstration of 100 nm inversion-mode InGaAs FinFET through damage-free sidewall etching YQ Wu, RS Wang, T Shen, JJ Gu, PD Ye 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 109 | 2009 |
| Analog/RF performance of Si nanowire MOSFETs and the impact of process variation R Wang, J Zhuge, RU Huang, YU Tian, H Xiao, L Zhang, C Li, X Zhang, ... IEEE transactions on Electron Devices 54 (6), 1288-1294, 2007 | 104 | 2007 |
| Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs J Zhuge, R Wang, R Huang, Y Tian, L Zhang, DW Kim, D Park, Y Wang IEEE Electron Device Letters 30 (1), 57-60, 2008 | 96 | 2008 |
| GaSb Inversion-Mode PMOSFETs With Atomic-Layer-Depositedas Gate Dielectric M Xu, R Wang, DY Peide IEEE electron device letters 32 (7), 883-885, 2011 | 89 | 2011 |
| High-speed black phosphorus field-effect transistors approaching ballistic limit X Li, Z Yu, X Xiong, T Li, T Gao, R Wang, R Huang, Y Wu Science advances 5 (6), eaau3194, 2019 | 88 | 2019 |
| New self-aligned silicon nanowire transistors on bulk substrate fabricated by epi-free compatible CMOS technology: Process integration, experimental characterization of carrier … Y Tian, R Huang, Y Wang, J Zhuge, R Wang, J Liu, X Zhang, Y Wang 2007 IEEE International Electron Devices Meeting, 895-898, 2007 | 83 | 2007 |
| Impacts of random telegraph noise (RTN) on digital circuits M Luo, R Wang, S Guo, J Wang, J Zou, R Huang IEEE Transactions on Electron Devices 62 (6), 1725-1732, 2014 | 82 | 2014 |
| High Performance Deep-Submicron Inversion-Mode InGaAs MOSFETs with maximum Gm exceeding 1.1 mS/µm: New HBr pretreatment and channel engineering YQ Wu, M Xu, RS Wang, O Koybasi, PD Ye 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 82 | 2009 |
| Experimental investigations on carrier transport in Si nanowire transistors: Ballistic efficiency and apparent mobility R Wang, H Liu, R Huang, J Zhuge, L Zhang, DW Kim, X Zhang, D Park, ... IEEE transactions on electron devices 55 (11), 2960-2967, 2008 | 81 | 2008 |
| Predictive 3-D modeling of parasitic gate capacitance in gate-all-around cylindrical silicon nanowire MOSFETs J Zou, Q Xu, J Luo, R Wang, R Huang, Y Wang IEEE transactions on electron devices 58 (10), 3379-3387, 2011 | 72 | 2011 |
| Challenges of 22 nm and beyond CMOS technology R Huang, HM Wu, JF Kang, DY Xiao, XL Shi, X An, Y Tian, RS Wang, ... Science in China Series F: Information Sciences 52 (9), 1491-1533, 2009 | 65 | 2009 |
| Investigation on variability in metal-gate Si nanowire MOSFETs: Analysis of variation sources and experimental characterization R Wang, J Zhuge, R Huang, T Yu, J Zou, DW Kim, D Park, Y Wang IEEE transactions on electron devices 58 (8), 2317-2325, 2011 | 64 | 2011 |
| Investigations on line-edge roughness (LER) and line-width roughness (LWR) in nanoscale CMOS technology: Part II–experimental results and impacts on device variability R Wang, X Jiang, T Yu, J Fan, J Chen, DZ Pan, R Huang IEEE transactions on electron devices 60 (11), 3676-3682, 2013 | 61 | 2013 |
| New insights into the hot carrier degradation (HCD) in FinFET: New observations, unified compact model, and impacts on circuit reliability Z Yu, J Zhang, R Wang, S Guo, C Liu, R Huang 2017 IEEE International Electron Devices Meeting (IEDM), 7.2. 1-7.2. 4, 2017 | 57 | 2017 |
| Investigation of parasitic effects and design optimization in silicon nanowire MOSFETs for RF applications J Zhuge, R Wang, R Huang, X Zhang, Y Wang IEEE transactions on electron devices 55 (8), 2142-2147, 2008 | 57 | 2008 |
| Comprehensive performance re-assessment of TFETs with a novel design by gate and source engineering from device/circuit perspective Q Huang, R Huang, C Wu, H Zhu, C Chen, J Wang, L Guo, R Wang, L Ye, ... 2014 IEEE International Electron Devices Meeting, 13.3. 1-13.3. 4, 2014 | 54 | 2014 |
| High-performance BOI FinFETs based on bulk-silicon substrate X Xu, R Wang, R Huang, J Zhuge, G Chen, X Zhang, Y Wang IEEE transactions on electron devices 55 (11), 3246-3250, 2008 | 44 | 2008 |
| Investigations on line-edge roughness (LER) and line-width roughness (LWR) in nanoscale CMOS technology: Part I–modeling and simulation method X Jiang, R Wang, T Yu, J Chen, R Huang IEEE Transactions on electron devices 60 (11), 3669-3675, 2013 | 43 | 2013 |
| New insights into AC RTN in scaled high-к/metal-gate MOSFETs under digital circuit operations J Zou, R Wang, N Gong, R Huang, X Xu, J Ou, C Liu, J Wang, J Liu, J Wu, ... 2012 Symposium on VLSI Technology (VLSIT), 139-140, 2012 | 42 | 2012 |
