Follow
Hsiao-Hsuan Liu
Hsiao-Hsuan Liu
imec & KUL
Verified email at imec.be
Title
Cited by
Cited by
Year
First Vertically Stacked Tensily Strained Ge 0.98 Si 0.02 nGAAFETs with No Parasitic Channel and L G= 40 nm Featuring Record I ON= 48 μA at V OV= V DS= 0.5 V and Record G m …
CT Tu, YS Huang, FL Lu, HH Liu, CY Lin, YC Liu, CW Liu
2019 IEEE International Electron Devices Meeting (IEDM), 29.3. 1-29.3. 4, 2019
152019
Energy-efficient in-memory address calculation
A Yousefzadeh, J Stuijt, M Hijdra, HH Liu, A Gebregiorgis, A Singh, ...
ACM Transactions on Architecture and Code Optimization (TACO) 19 (4), 1-16, 2022
52022
Extended methodology to determine SRAM write margin in resistance-dominated technology node
HH Liu, SM Salahuddin, D Abdi, R Chen, P Weckx, P Matagne, F Catthoor
IEEE Transactions on Electron Devices 69 (6), 3113-3117, 2022
52022
CFET SRAM DTCO, Interconnect Guideline, and Benchmark for CMOS Scaling
HH Liu, SM Salahuddin, BT Chan, P Schuddinck, Y Xiang, G Hellings, ...
IEEE Transactions on Electron Devices 70 (3), 883-890, 2023
42023
Design-technology co-optimization overview of CFET architecture
G Mirabelli, P Schuddinck, HH Liu, S Yang, O Zografos, SM Salahuddin, ...
DTCO and Computational Patterning II 12495, 117-123, 2023
32023
DTCO of sequential and monolithic CFET SRAM
HH Liu, SM Salahuddin, BT Chan, P Schuddinck, Y Xiang, P Weckx, ...
DTCO and Computational Patterning II 12495, 219-225, 2023
32023
Graphene-Based Interconnect Exploration for Large SRAM Caches for Ultrascaled Technology Nodes
Z Pei, M Mayahinia, HH Liu, M Tahoori, F Catthoor, Z Tokei, C Pan
IEEE Transactions on Electron Devices 70 (1), 230-238, 2022
32022
Different infrared responses from the stacked channels and parasitic channel of stacked GeSn channel transistors
HH Liu, YS Huang, FL Lu, HY Ye, CW Liu
IEEE Electron Device Letters 41 (1), 147-150, 2019
32019
Optical Detection of Parasitic Channels of Vertically Stacked Ge0.98Si0.02 nGAAFETs
SY Lin, HH Liu, CT Tu, YS Huang, FL Lu, CW Liu
IEEE Transactions on Electron Devices 67 (10), 4073-4078, 2020
22020
Ultimate MRAM Scaling: Design Exploration of High-Density, High-Performance and Energy-Efficient VGSOT for Last Level Cache
M Gupta, Y Xiangt, F García-Redondo, K Cai, D Abdi, HH Liu, S Rao, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
12023
Technology/Memory Co-Design and Co-Optimization Using E-Tree Interconnect
Z Pei, M Mayahinia, HH Liu, M Tahoori, F Catthoor, Z Tokei, C Pan
Proceedings of the Great Lakes Symposium on VLSI 2023, 159-162, 2023
12023
Emerging Interconnect Exploration for SRAM Application Using Nonconventional H-Tree and Center-Pin Access
Z Pei, M Mayahinia, HH Liu, M Tahoori, SM Salahuddin, F Catthoor, ...
2023 24th International Symposium on Quality Electronic Design (ISQED), 1-1, 2023
12023
Bit Cell with Isolating Wall
HH Liu, SM Salahuddin, BT Chan
US Patent App. 18/335,320, 2023
2023
Bit Cell for Static Random Access Memory
HH Liu, SM Salahuddin, BT Chan
US Patent App. 18/335,310, 2023
2023
CFET SRAM With Double-Sided Interconnect Design and DTCO Benchmark
HH Liu, P Schuddinck, Z Pei, L Verschueren, H Mertens, SM Salahuddin, ...
IEEE Transactions on Electron Devices, 2023
2023
Electromigration-aware design technology co-optimization for SRAM in advanced technology nodes
M Mayahinia, HH Liu, S Mishra, Z Tokei, F Catthoor, M Tahoori
2023 Design, Automation & Test in Europe Conference & Exhibition (DATE), 1-6, 2023
2023
Infrared Response of Stacked GeSn Transistors
HH Liu, YS Huang, FL Lu, HY Ye, CW Liu
2020 International Symposium on VLSI Technology, Systems and Applications …, 2020
2020
The system can't perform the operation now. Try again later.
Articles 1–17