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Enxia Zhang
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Proton-induced dehydrogenation of defects in AlGaN/GaN HEMTs
J Chen, YS Puzyrev, CX Zhang, EX Zhang, MW McCurdy, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 60 (6), 4080-4086, 2013
962013
Process dependence of proton-induced degradation in GaN HEMTs
T Roy, EX Zhang, YS Puzyrev, DM Fleetwood, RD Schrimpf, BK Choi, ...
IEEE Transactions on Nuclear Science 57 (6), 3060-3065, 2010
942010
Fin-width dependence of ionizing radiation-induced subthreshold-swing degradation in 100-nm-gate-length FinFETs
F El Mamouni, EX Zhang, RD Schrimpf, DM Fleetwood, RA Reed, ...
IEEE Transactions on Nuclear Science 56 (6), 3250-3255, 2009
942009
Radiation-induced defect evolution and electrical degradation of AlGaN/GaN high-electron-mobility transistors
YS Puzyrev, T Roy, EX Zhang, DM Fleetwood, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 58 (6), 2918-2924, 2011
812011
Laser-and heavy ion-induced charge collection in bulk FinFETs
F El-Mamouni, EX Zhang, ND Pate, N Hooten, RD Schrimpf, RA Reed, ...
IEEE Transactions on Nuclear Science 58 (6), 2563-2569, 2011
802011
Effects of applied bias and high field stress on the radiation response of GaN/AlGaN HEMTs
J Chen, YS Puzyrev, R Jiang, EX Zhang, MW McCurdy, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 62 (6), 2423-2430, 2015
782015
Low-energy X-ray and ozone-exposure induced defect formation in graphene materials and devices
EX Zhang, AKM Newaz, B Wang, S Bhandaru, CX Zhang, DM Fleetwood, ...
IEEE transactions on nuclear science 58 (6), 2961-2967, 2011
722011
Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses
F Faccio, G Borghello, E Lerario, DM Fleetwood, RD Schrimpf, H Gong, ...
IEEE Transactions on Nuclear Science 65 (1), 164-174, 2017
712017
Impact of proton irradiation on deep level states in n-GaN
Z Zhang, AR Arehart, E Cinkilic, J Chen, EX Zhang, DM Fleetwood, ...
Applied Physics Letters 103 (4), 042102, 2013
642013
Bias dependence of total ionizing dose effects in SiGe-MOS FinFETs
GX Duan, CX Zhang, EX Zhang, J Hachtel, DM Fleetwood, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 61 (6), 2834-2838, 2014
612014
Geometry dependence of total-dose effects in bulk FinFETs
I Chatterjee, EX Zhang, BL Bhuva, RA Reed, ML Alles, NN Mahatme, ...
IEEE Transactions on Nuclear Science 61 (6), 2951-2958, 2014
582014
Effect of transistor density and charge sharing on single-event transients in 90-nm bulk CMOS
NM Atkinson, JR Ahlbin, AF Witulski, NJ Gaspard, WT Holman, BL Bhuva, ...
IEEE Transactions on Nuclear Science 58 (6), 2578-2584, 2011
582011
Effectiveness of SEL hardening strategies and the latchup domino effect
NA Dodds, NC Hooten, RA Reed, RD Schrimpf, JH Warner, NJH Roche, ...
IEEE Transactions on Nuclear Science 59 (6), 2642-2650, 2012
572012
The Impact of X-Ray and Proton Irradiation on -Based Bipolar Resistive Memories
JS Bi, ZS Han, EX Zhang, MW McCurdy, RA Reed, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 60 (6), 4540-4546, 2013
562013
Heavy-ion-induced current transients in bulk and SOI FinFETs
F El-Mamouni, EX Zhang, DR Ball, B Sierawski, MP King, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 59 (6), 2674-2681, 2012
562012
Total-ionizing-dose radiation effects in AlGaN/GaN HEMTs and MOS-HEMTs
X Sun, OI Saadat, J Chen, EX Zhang, S Cui, T Palacios, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 60 (6), 4074-4079, 2013
542013
Ozone-exposure and annealing effects on graphene-on-SiO2 transistors
EX Zhang, AKM Newaz, B Wang, CX Zhang, DM Fleetwood, KI Bolotin, ...
Applied physics letters 101 (12), 121601, 2012
542012
Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance
MP King, X Wu, M Eller, S Samavedam, MR Shaneyfelt, AI Silva, ...
IEEE Transactions on Nuclear Science 64 (1), 285-292, 2016
532016
Effects of proton-induced displacement damage on gallium nitride HEMTs in RF power amplifier applications
NE Ives, J Chen, AF Witulski, RD Schrimpf, DM Fleetwood, RW Bruce, ...
IEEE Transactions on Nuclear Science 62 (6), 2417-2422, 2015
532015
Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors
T Roy, EX Zhang, YS Puzyrev, X Shen, DM Fleetwood, RD Schrimpf, ...
Applied Physics Letters 99 (20), 203501, 2011
512011
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