| -annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability A Nakajima, QDM Khosru, T Yoshimoto, T Kidera, S Yokoyama Applied Physics Letters 80 (7), 1252-1254, 2002 | 127 | 2002 |
| Effect of biomolecule position and fill in factor on sensitivity of a dielectric modulated double gate junctionless MOSFET biosensor E Rahman, A Shadman, QDM Khosru Sensing and Bio-Sensing Research 13, 49-54, 2017 | 57 | 2017 |
| High electron mobility transistors: performance analysis, research trend and applications MNA Aadit, SG Kirtania, F Afrin, MK Alam, QDM Khosru Different Types of Field-Effect Transistors-Theory and Applications, 45-64, 2017 | 37 | 2017 |
| Soft breakdown free atomic-layer-deposited silicon-nitride/SiO/sub 2/stack gate dielectrics A Nakajima, QDM Khosru, T Yoshirnoto, T Kidera, S Yokoyama International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 37 | 2001 |
| Degradation of inversion layer electron mobility due to interface traps in metal‐oxide‐semiconductor transistors T Matsuoka, S Taguchi, QDM Khosru, K Taniguchi, C Hamaguchi Journal of applied physics 78 (5), 3252-3257, 1995 | 35 | 1995 |
| Monolayer MoS2 and WSe2 double gate field effect transistor as super nernst pH sensor and nanobiosensor A Shadman, E Rahman, QDM Khosru Sensing and Bio-Sensing Research 11, 45-51, 2016 | 34 | 2016 |
| Atomic-layer-deposited silicon-nitride/SiO2 stack––a highly potential gate dielectrics for advanced CMOS technology A Nakajima, QDM Khosru, T Yoshimoto, S Yokoyama Microelectronics Reliability 42 (12), 1823-1835, 2002 | 32 | 2002 |
| Generation and relaxation phenomena of positive charge and interface trap in a metal‐oxide‐semiconductor structure QDM Khosru, N Yasuda, K Taniguchi, C Hamaguchi Journal of applied physics 77 (9), 4494-4503, 1995 | 32 | 1995 |
| Spatial distribution of trapped holes in SiO2 QDM Khosru, N Yasuda, K Taniguchi, C Hamaguchi Journal of applied physics 76 (8), 4738-4742, 1994 | 30 | 1994 |
| Soft Breakdown Free Atomic-Layer-Deposited Silicon-Nitride/SiO_2 Stack Gate Dielectrics 中島安理 Technical Digest of the 2001 IEEE International Electron Devices Meeting …, 2001 | 28 | 2001 |
| Negative capacitance tunnel field effect transistor: A novel device with low subthreshold swing and high on current N Chowdhury, SMF Azad, QDM Khosru ECS Transactions 58 (16), 1, 2014 | 24 | 2014 |
| Trilayer TMDC heterostructures for MOSFETs and nanobiosensors K Datta, A Shadman, E Rahman, QDM Khosru Journal of Electronic Materials 46, 1248-1260, 2017 | 21 | 2017 |
| Parametrization of a silicon nanowire effective mass model from sp3d5s* orbital basis calculations RN Sajjad, K Alam, QDM Khosru Semiconductor science and technology 24 (4), 045023, 2009 | 21 | 2009 |
| Oxide thickness dependence of interface trap generation in a metal‐oxide‐semiconductor structure during substrate hot‐hole injection QDM Khosru, N Yasuda, K Taniguchi, C Hamaguchi Applied physics letters 63 (18), 2537-2539, 1993 | 21 | 1993 |
| Structural, dielectric and magnetic properties of Ta-substituted Bi0. 8La0. 2FeO3 multiferroics T Fakhrul, R Mahbub, N Chowdhury, QDM Khosru, A Sharif Journal Of Alloys And Compounds 622, 471-476, 2015 | 20 | 2015 |
| A physically based compact I–V model for monolayer TMDC channel MOSFET and DMFET biosensor E Rahman, A Shadman, I Ahmed, SUZ Khan, QDM Khosru Nanotechnology 29 (23), 235203, 2018 | 19 | 2018 |
| Linear pocket profile based threshold voltage model for sub-100 nm n-MOSFET MH Bhuyan, QDM Khosru International Journal of Electrical and Computer Engineering 5 (5), 310-315, 2010 | 18 | 2010 |
| Impact of high‐κ gate dielectric and other physical parameters on the electrostatics and threshold voltage of long channel gate‐all‐around nanowire transistor SUZ Khan, MS Hossain, FU Rahman, R Zaman, MO Hossen, ... International Journal of Numerical Modelling: Electronic Networks, Devices …, 2015 | 17 | 2015 |
| FEM model of wraparound CNTFET with multi-CNT and its capacitance modeling MRK Akanda, QDM Khosru IEEE transactions on electron devices 60 (1), 97-102, 2012 | 17 | 2012 |
| Low-temperature formation of highly reliable silicon-nitride gate dielectrics with suppressed soft-breakdown phenomena for advanced complementary metal–oxide–semiconductor … A Nakajima, QDM Khosru, T Yoshimoto, T Kidera, S Yokoyama Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002 | 16 | 2002 |
