Bin Chen
Title
Cited by
Cited by
Year
Structural characterization and iron detection at Σ3 grain boundaries in multicrystalline silicon
B Chen, J Chen, T Sekiguchi, M Saito, K Kimoto
Journal of Applied Physics 105 (11), 113502, 2009
562009
Imaging rotational dynamics of nanoparticles in liquid by 4D electron microscopy
X Fu, B Chen, J Tang, MT Hassan, AH Zewail
Science 355 (6324), 494-498, 2017
552017
Electron-beam-induced current study of stacking faults and partial dislocations in 4H-SiC Schottky diode
B Chen, J Chen, T Sekiguchi, T Ohyanagi, H Matsuhata, A Kinoshita, ...
Applied Physics Letters 93 (3), 033514-033514-3, 2008
512008
Strengthening Brittle Semiconductor Nanowires through Stacking Faults: Insights from in Situ Mechanical Testing
B Chen, J Wang, Q Gao, Y Chen, X Liao, C Lu, HH Tan, YW Mai, J Zou, ...
Nano letters 13 (9), 4369-4373, 2013
452013
Surface defects and accompanying imperfections in 4H–SiC: Optical, structural and electrical characterization
B Chen, H Matsuhata, T Sekiguchi, K Ichinoseki, H Okumura
Acta Materialia 60 (1), 51-58, 2012
402012
Cheap, gram-scale fabrication of BN nanosheets via substitution reaction of graphite powders and their use for mechanical reinforcement of polymers
F Liu, X Mo, H Gan, T Guo, X Wang, B Chen, J Chen, S Deng, N Xu, ...
Scientific reports 4 (1), 1-8, 2014
392014
Correlation between residual strain and electrically active grain boundaries in multicrystalline silicon
J Chen, B Chen, T Sekiguchi, M Fukuzawa, M Yamada
Applied Physics Letters 93, 112105, 2008
382008
Anelastic Behavior in GaAs Semiconductor Nanowires
B Chen, Q Gao, Y Wang, X Liao, YW Mai, HH Tan, J Zou, SP Ringer, ...
Nano letters 13 (7), 3169-3172, 2013
372013
Contrast analysis of Shockley partial dislocations in 4H-SiC observed by synchrotron Berg–Barrett X-ray topography
H Matsuhata, H Yamaguchi, T Yamashita, T Tanaka, B Chen, T Sekiguchi
Philosophical Magazine 94 (15), 1674-1685, 2014
242014
Evidence for a general mechanism modulating carrier lifetime in SiC
B Chen, T Sekiguchi, T Ohyanagi, H Matsuhata, A Kinoshita, H Okumura
Physical Review B 81 (23), 233203, 2010
242010
Tuning minority-carrier lifetime through stacking fault defects: The case of polytypic SiC
B Chen, H Matsuhata, T Sekiguchi, A Kinoshita, K Ichinoseki, H Okumura
Applied Physics Letters 100 (13), 132108-132108-4, 2012
222012
Cathodoluminescence study of dislocation-related luminescence from small-angle grain boundaries in multicrystalline silicon
W Lee, J Chen, B Chen, J Chang, T Sekiguchi
Applied Physics Letters 94, 112103, 2009
222009
Photoinduced nanobubble-driven superfast diffusion of nanoparticles imaged by 4D electron microscopy
X Fu, B Chen, J Tang, AH Zewail
Science Advances 3 (8), e1701160, 2017
212017
Electron-beam-induced current and cathodoluminescence study of dislocation arrays in 4H-SiC homoepitaxial layers
B Chen, T Sekiguchi, T Ohyanagi, H Matsuhata, A Kinoshita, H Okumura
Journal of Applied Physics 106 (7), 074502-074502-4, 2009
212009
Helical growth of aluminum nitride: new insights into its growth habit from nanostructures to single crystals
XH Zhang, RW Shao, L Jin, JY Wang, K Zheng, CL Zhao, JC Han, B Chen, ...
Scientific reports 5 (1), 1-12, 2015
202015
Pinning of recombination-enhanced dislocation motion in 4H–SiC: Role of Cu and EH complex
B Chen, H Matsuhata, T Sekiguchi, T Ohyanagi, A Kinoshita, H Okumura
Applied Physics Letters 96, 212110, 2010
192010
Electron-beam-induced current study of electrical activity of dislocations in 4H–SiC homoeptaxial film
B Chen, J Chen, T Sekiguchi, A Kinoshita, H Matsuhata, H Yamaguchi, ...
Journal of Materials Science: Materials in Electronics 19, 219-223, 2008
182008
Deformation-induced phase transformation in 4H–SiC nanopillars
B Chen, J Wang, Y Zhu, X Liao, C Lu, YW Mai, SP Ringer, F Ke, Y Shen
Acta Materialia 80, 392-399, 2014
152014
Optical manipulation of magnetic vortices visualized in situ by Lorentz electron microscopy
X Fu, SD Pollard, B Chen, BK Yoo, H Yang, Y Zhu
Science advances 4 (7), eaat3077, 2018
142018
Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices
B Chen, J Chen, T Sekiguchi, T Ohyanagi, H Matsuhata, A Kinoshita, ...
Journal of electronic materials 39 (6), 684-687, 2010
142010
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